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SS9018GBU

Onsemi

SS9018GBU by Onsemi

SS9018GBU by Onsemi is an NPN RF BJT transistor with a max fT of 1100 MHz. It has a max IC of 0.05 A and hFE of 72, making it ideal for amplifier applications. With a package style of cylindrical and terminal finish in tin, it operates at up to 150°C in the very high-frequency band.

Median Price

$0.038

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 130,381 parts In-Stock

1+ parts

-

100+ parts

$0.035

1k+ parts

$0.029

10k+ parts

$0.026

130,381

-

$0.035

$0.029

$0.026

DigiKey

USA . 129,281 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.040

129,281

-

-

-

$0.040

Flip Electronics (Authorized)

USA . 9,570 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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9,570

-

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$0.029

100+ parts

-

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10

$0.029

-

-

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Digiode

USA . 637 parts In-Stock

1+ parts

$0.031

100+ parts

-

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637

$0.031

-

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Vyrian

USA . 73,056 parts In-Stock

1+ parts

-

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73,056

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-

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Flip Electronics

USA . 9,570 parts In-Stock

1+ parts

-

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9,570

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-

-

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DigiKey Marketplace

USA . 9,570 parts In-Stock

1+ parts

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100+ parts

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9,570

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-

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Chip Stock

USA . 5,500 parts In-Stock

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5,500

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North Shore Components

USA . 4,400 parts In-Stock

1+ parts

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100+ parts

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4,400

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 72,999 parts In-Stock

1+ parts

$0.025

100+ parts

-

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72,999

$0.025

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Corohmni

South Africa . 171 parts In-Stock

1+ parts

$0.028

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171

$0.028

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Argo Parts USA

USA . 1,541 parts In-Stock

1+ parts

$0.029

100+ parts

-

1k+ parts

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10k+ parts

$0.028

1,541

$0.029

-

-

$0.028

Netroflash

USA . 1,000 parts In-Stock

1+ parts

$0.029

100+ parts

-

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$0.028

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$0.027

1,000

$0.029

-

$0.028

$0.027

Corphita

USA . 1,296 parts In-Stock

1+ parts

$0.030

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1,296

$0.030

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Microchip USA

USA . 257 parts In-Stock

1+ parts

$21.710

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257

$21.710

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Perfect Parts

USA . 39,552 parts In-Stock

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39,552

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Problanco Electronics

Mexico . 5,675 parts In-Stock

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5,675

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Kulean Microsystems

USA . 5,187 parts In-Stock

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5,187

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TANS Electronics

Latvia . 4,452 parts In-Stock

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4,452

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Continental Prestige Electronics

USA . 4,300 parts In-Stock

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$0.024

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4,300

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$0.024

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Supply Digital

USA . 2,726 parts In-Stock

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2,726

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SupplyDigital Components

Austria . 1,797 parts In-Stock

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1,797

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UHIMA Technologies

Türkiye . 360 parts In-Stock

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360

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Overview

Unlock the power of high-quality RF small signal transistors with the SS9018GBU by Onsemi. Manufactured by a trusted industry leader, this NPN transistor offers unparalleled performance for amplifier applications in the very high-frequency band. With a maximum operating temperature of 150°C and a nominal transition frequency of 1100 MHz, this transistor provides customers with value, reliability, and efficiency in a compact and durable package. Upgrade your electronics with the SS9018GBU and experience the difference that quality makes.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the transistor lightweight and cost-effective.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifier applications due to their high gain and low noise.

Configuration: SINGLE

Single configuration simplifies the design and makes it easier to implement in circuits.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in signal amplification.

Package Shape: ROUND

Round shape allows for easy mounting and installation in various circuit layouts.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide a secure and stable connection in circuit boards.

Highest Frequency Band: VERY HIGH FREQUENCY BAND

Suitable for applications requiring very high frequency signals with minimal distortion.

Maximum Power Dissipation (Abs): 0.4 W

With a high maximum power dissipation, the transistor can handle higher power applications without overheating.

Package Style (Meter): CYLINDRICAL

Cylindrical package style offers a compact and space-saving design for efficient circuit board layout.

Minimum DC Current Gain (hFE): 72

High minimum DC current gain ensures stable and reliable amplification of signals in the circuit.

Maximum Operating Temperature: 150 °C

Capable of operating at high temperatures, making it suitable for demanding industrial applications.

Maximum Collector-Base Capacitance: 1.7 pF

Low collector-base capacitance minimizes signal distortion and improves high-frequency response.

Maximum Collector-Emitter Voltage: 15 V

With a high maximum collector-emitter voltage, the transistor can handle higher voltage signals without breakdown.

Transistor Element Material: SILICON

Silicon-based material provides good thermal conductivity and reliability for long-term performance.

Maximum Collector Current (IC): 0.05 A

Suitable for low to moderate current applications, ideal for small signal amplification.

Terminal Finish: TIN

Tin terminal finish ensures good conductivity and solderability for reliable connections in circuits.

Terminal Position: BOTTOM

Bottom terminal position facilitates easy and secure mounting on circuit boards.

Nominal Transition Frequency (fT): 1100 MHz

High nominal transition frequency enables the transistor to amplify high-frequency signals with low distortion.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) SS9018GBU attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

1.7 pF

Maximum Collector-Emitter Voltage:

15 V

Configuration:

Minimum DC Current Gain (hFE):

72

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

SS9018GBU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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