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MPS5179RLRM

Onsemi

MPS5179RLRM by Onsemi

MPS5179RLRM by Onsemi is an NPN RF BJT transistor with a max collector-emitter voltage of 12V and fT of 900MHz. It is ideal for amplifier applications in the very high-frequency band, featuring a single configuration in a cylindrical package with through-hole terminals.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 943 parts In-Stock

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Vyrian

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Kulean Microsystems

USA . 8,356 parts In-Stock

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Problanco Electronics

Mexico . 5,556 parts In-Stock

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SupplyDigital Components

Austria . 3,820 parts In-Stock

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Corphita

USA . 1,601 parts In-Stock

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UHIMA Technologies

Türkiye . 676 parts In-Stock

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TANS Electronics

Latvia . 606 parts In-Stock

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Corohmni

South Africa . 96 parts In-Stock

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Overview

Enhance your RF signal amplification with the MPS5179RLRM by Onsemi, a top-tier manufacturer known for high-quality components. Designed for very high-frequency applications, this NPN bipolar junction transistor offers superior performance and reliability in amplifiers. Its plastic/epoxy package ensures durability, while its cylindrical shape and through-hole terminals make installation a breeze. Experience seamless signal processing and enhanced efficiency with the MPS5179RLRM, the perfect choice for your RF amplification needs. Step up your game with Onsemi's industry-leading technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides durability and protection for the transistor, allowing it to function reliably in various conditions.

Polarity or Channel Type: NPN

The NPN polarity ensures that the transistor can be easily integrated into existing circuit designs that require an NPN configuration.

Configuration: SINGLE

The single configuration simplifies the circuit design process and makes it easier to use this transistor in applications where only one transistor is needed.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, this transistor is optimized for providing signal gain and amplification in electronic circuits.

Package Shape: ROUND

The round package shape allows for easy mounting and integration into circuits, making it a convenient choice for circuit designers.

Terminal Form: THROUGH-HOLE

The through-hole terminal form makes it easy to solder and secure the transistor onto a circuit board, ensuring a reliable connection.

Highest Frequency Band: VERY HIGH FREQUENCY BAND

The very high frequency band capability of this transistor makes it ideal for applications requiring high-frequency signal amplification.

Max Collector-Base Capacitance: 1 pF

The low collector-base capacitance of 1 pF helps in minimizing signal distortion and ensuring stable performance in high-frequency circuits.

Max Collector-Emitter Voltage: 12 V

With a maximum collector-emitter voltage of 12 V, this transistor can handle higher voltage levels, making it suitable for a range of applications.

Transistor Element Material: SILICON

The use of silicon as the transistor element material ensures high performance, reliability, and temperature tolerance for the transistor.

Max Collector Current (IC): 0.05 A

The maximum collector current rating of 0.05 A allows the transistor to handle moderate current levels, making it versatile for various circuit applications.

Terminal Finish: TIN LEAD

The tin lead terminal finish provides a reliable connection and soldering surface, ensuring long-term stability and performance of the transistor.

Terminal Position: BOTTOM

The bottom terminal position facilitates easy and secure PCB mounting and soldering, making installation and circuit integration convenient.

Nominal Transition Frequency (fT): 900 MHz

With a high nominal transition frequency of 900 MHz, this transistor can efficiently amplify high-frequency signals, making it suitable for RF applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) MPS5179RLRM attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

1 pF

Maximum Collector-Emitter Voltage:

12 V

Configuration:

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPS5179RLRM Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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