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BFP420H6327

Infineon Technologies

BFP420H6327 by Infineon Technologies

BFP420H6327 by Infineon is a NPN RF BJT transistor with 4 terminals, operating up to 150°C. It has a max fT of 25 GHz and collector-emitter voltage of 4.5V, suitable for X Band amplifier applications in automotive electronics meeting AEC-Q101 standards.

Median Price

$0.920

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 206 parts In-Stock

1+ parts

$0.920

100+ parts

$0.388

1k+ parts

$0.261

10k+ parts

$0.196

206

$0.920

$0.388

$0.261

$0.196

Chip1Stop

Japan . 12 parts In-Stock

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$1.100

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$1.100

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Verical

USA . 8,880 parts In-Stock

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$0.352

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$0.333

8,880

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$0.352

$0.333

Distributors (In-Stock)

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Digiode

USA . 495 parts In-Stock

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$0.570

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$0.570

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ACDS - Activité Composants Distribution Service

France . 8,880 parts In-Stock

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Vyrian

USA . 6,732 parts In-Stock

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Chip Stock

USA . 6,587 parts In-Stock

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Velocity Electronics

USA . 3,000 parts In-Stock

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Rutronik

Germany . 3,000 parts In-Stock

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$0.204

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$0.204

Odintec Ltd.

Israel . 3,000 parts In-Stock

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Cyclops Electronics Ltd

UK . 3,000 parts In-Stock

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Bristol Electronics

USA . 2,876 parts In-Stock

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Elcom Components

USA . 2,815 parts In-Stock

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VNN

France . 2,325 parts In-Stock

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Nova Conductors

Japan . 100 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 6,442 parts In-Stock

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$0.264

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6,442

$0.264

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CoreStaff

Japan . 8,880 parts In-Stock

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$0.520

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$0.252

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$0.204

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8,880

$0.520

$0.252

$0.204

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Corphita

USA . 723 parts In-Stock

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$0.540

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723

$0.540

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Modulus Dynamics

Lithuania . 2,856 parts In-Stock

1+ parts

$1.950

100+ parts

$1.872

1k+ parts

$1.794

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2,856

$1.950

$1.872

$1.794

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Andel Nordic

Denmark . 2,125 parts In-Stock

1+ parts

$20.030

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$14.018

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$14.018

2,125

$20.030

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$14.018

$14.018

Futuretech Components

Singapore . 360,000 parts In-Stock

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Perfect Parts

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GreenTree Electronics

Israel . 30,000 parts In-Stock

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A-Z Elektronik GmbH

Germany . 19,305 parts In-Stock

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Authorized Procurement Solutions

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Component Connect

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Kepictronics

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Alle Elektronik GmbH

Germany . 4,670 parts In-Stock

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Lixinc

USA . 4,520 parts In-Stock

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Glotronic Ltd.

UK . 3,900 parts In-Stock

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Continental Prestige Electronics

USA . 3,109 parts In-Stock

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S.R.D Solutions

India . 3,000 parts In-Stock

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Argo Parts USA

USA . 1,541 parts In-Stock

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Aranea Global

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Overview

Infineon RF Transistors include Low Noise Amplifiers and High Linearity Transistors. Devices in the Low Noise category are based on silicon bipolar technology. Moderate transition frequency of fT <20 GHz provides ease of use and stability. Breakdown voltage can safely support supply voltage of 5V. These transistors are suitable for use with AM over VHF/UHF up to 14GHz. High Linearity Transistors provide OIP3 (Output 3rd Order Intercept Point) above 29dBm. They are based on Infineon's high volume silicon bipolar and SiGe:C technologies for best in class noise figures. These devices are ideal for drivers, pre-amplifiers, and buffer amplifiers.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring reliable performance in various conditions.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifiers and offer high efficiency in signal amplification.

Configuration: SINGLE

Simplified design with single configuration makes it easy to integrate into circuitry.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in amplifying signals.

Surface Mount: YES

Allows for easy and convenient mounting on circuit boards, saving space and facilitating automated assembly processes.

Package Shape: RECTANGULAR

Rectangular shape provides a compact and uniform form factor for easy integration into circuits.

Terminal Form: GULL WING

Gull wing terminals offer secure soldering connections and aid in easy mounting onto circuit boards.

Highest Frequency Band: X BAND

Suitable for high-frequency applications in the X band, making it ideal for communication and radar systems.

No. of Terminals: 4

Simple 4-terminal configuration allows for straightforward connection and integration into circuits.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the circuit board and enables high-density circuit designs.

Maximum Operating Temperature: 150 °C

Can operate effectively at high temperatures, ensuring stability and reliability in demanding environments.

Maximum Collector-Base Capacitance: 0.3 pF

Low collector-base capacitance minimizes signal distortion and enhances performance in high-frequency applications.

Maximum Collector-Emitter Voltage: 4.5 V

Operates efficiently at low collector-emitter voltage, making it suitable for low-power applications.

Transistor Element Material: SILICON

Silicon material offers high performance, reliability, and efficiency in signal amplification applications.

Maximum Collector Current (IC): 0.035 A

Capable of handling moderate collector currents, suitable for various amplifier and signal processing applications.

Terminal Finish: MATTE TIN

Matte tin finish provides a reliable and durable terminal surface for soldering connections.

Terminal Position: DUAL

Dual terminal position allows for flexible mounting and connection options in circuit designs.

Reference Standard: AEC-Q101

Complies with automotive industry quality standard AEC-Q101, ensuring reliability and performance in automotive applications.

Nominal Transition Frequency (fT): 25000 MHz

High nominal transition frequency enables high-speed signal processing and amplification, suitable for high-frequency applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) BFP420H6327 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Infineon Technologies

Specs

Additional Features:

HIGH RELIABILITY, LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

.3 pF

Maximum Collector-Emitter Voltage:

4.5 V

Configuration:

Highest Frequency Band:

X BAND

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BFP420H6327 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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