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MPSH17RLRE

Onsemi

MPSH17RLRE by Onsemi

MPSH17RLRE by Onsemi is an NPN RF BJT transistor with a max collector-emitter voltage of 15V and fT of 800MHz. It is designed for amplifier applications in the very high-frequency band, featuring a package style of cylindrical shape with through-hole terminals. Operating at up to 150 °C, it has a low collector-base capacitance of 0.9pF.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,029 parts In-Stock

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Digiode

USA . 1,927 parts In-Stock

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1,927

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SupplyDigital Components

Austria . 3,656 parts In-Stock

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Kulean Microsystems

USA . 3,080 parts In-Stock

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Problanco Electronics

Mexico . 3,076 parts In-Stock

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TANS Electronics

Latvia . 2,516 parts In-Stock

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Corphita

USA . 1,272 parts In-Stock

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UHIMA Technologies

Türkiye . 395 parts In-Stock

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Corohmni

South Africa . 256 parts In-Stock

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Overview

Elevate your RF amplifier projects with the MPSH17RLRE by Onsemi. This high-quality NPN transistor offers exceptional performance in the very high-frequency band, providing reliable amplification for a wide range of applications. Onsemi's reputation for excellence ensures that this transistor is not only durable and efficient but also delivers unparalleled value to customers. Experience the benefits of superior signal processing and seamless integration with the MPSH17RLRE, setting a new standard in RF small signal BJT technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body provides good insulation and can withstand higher temperatures, making the transistor more durable and reliable.

Polarity or Channel Type: NPN

Being an NPN transistor allows for efficient amplification of signals in various electronic circuits, making it a versatile choice for amplifier applications.

Configuration: SINGLE

The single configuration simplifies circuit design and integration, making the transistor easy to use in amplifier applications.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, this transistor offers high performance and reliability in amplifying signals effectively.

Package Shape: ROUND

The round package shape provides a compact and space-saving design, making it suitable for applications where space is limited.

Terminal Form: THROUGH-HOLE

The through-hole terminals allow for easy and secure mounting on PCBs, ensuring stable connections and reliable performance.

Highest Frequency Band: VERY HIGH FREQUENCY BAND

With very high frequency capabilities, this transistor is ideal for applications requiring high-speed signal amplification and processing.

No. of Terminals: 3

Having 3 terminals allows for easy connection and integration into circuits, providing flexibility in circuit design and implementation.

Package Style (Meter): CYLINDRICAL

The cylindrical package style offers a compact and sturdy design, suitable for various electronic applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can withstand high temperatures, ensuring reliable performance in various environments.

Maximum Collector-Base Capacitance: 0.9 pF

The low collector-base capacitance of 0.9 pF minimizes signal distortion and ensures high-frequency performance in amplifier applications.

Maximum Collector-Emitter Voltage: 15 V

The maximum collector-emitter voltage of 15V allows for amplification of higher voltage signals, making it suitable for a wide range of applications.

Transistor Element Material: SILICON

Silicon is a common semiconductor material known for its reliability and high performance, making this transistor a durable and long-lasting choice.

Terminal Finish: TIN LEAD

The tin lead terminal finish provides good solderability and conductivity, ensuring secure connections and reliable performance in electronic circuits.

Terminal Position: BOTTOM

The bottom terminal position allows for easy mounting and connection on PCBs, facilitating smooth integration into electronic circuits.

Nominal Transition Frequency (fT): 800 MHz

With a high nominal transition frequency of 800 MHz, this transistor offers fast response times and high-speed signal processing capabilities in amplifier applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) MPSH17RLRE attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector-Base Capacitance:

.9 pF

Maximum Collector-Emitter Voltage:

15 V

Configuration:

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPSH17RLRE Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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