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MPS918RL1

Onsemi

MPS918RL1 by Onsemi

MPS918RL1 by Onsemi is an NPN RF BJT transistor with a max collector-emitter voltage of 15V and a transition frequency of 600MHz. It is designed for amplifier applications in the ultra-high-frequency band, featuring a package style of cylindrical shape with through-hole terminals. Operating at up to 150 °C, it has a max collector current of 0.05A and low collector-base capacitance of 3pF.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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ABC Electronics Ltd.

UK . 3,000 parts In-Stock

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Vyrian

USA . 1,265 parts In-Stock

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Digiode

USA . 1,019 parts In-Stock

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TANS Electronics

Latvia . 6,081 parts In-Stock

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Kulean Microsystems

USA . 4,605 parts In-Stock

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Problanco Electronics

Mexico . 2,729 parts In-Stock

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Corphita

USA . 2,186 parts In-Stock

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SupplyDigital Components

Austria . 1,905 parts In-Stock

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UHIMA Technologies

Türkiye . 529 parts In-Stock

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Corohmni

South Africa . 69 parts In-Stock

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Overview

Elevate your electronic projects with the MPS918RL1 by Onsemi, a top-of-the-line RF Small Signal BJT. Manufactured by the reputable Onsemi brand, this NPN transistor offers unparalleled quality and reliability. Ideal for amplifier applications in the ultra-high frequency band, this transistor is a game-changer in the world of electronics. With its durable plastic/epoxy package, through-hole terminals, and impressive maximum operating temperature of 150 °C, the MPS918RL1 ensures superior performance and longevity. Upgrade your designs today with this high-value component that delivers exceptional benefits to customers.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Ensures durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, providing versatility.

Configuration: SINGLE

Simplifies circuit design and integration.

Transistor Application: AMPLIFIER

Specifically designed for amplification tasks, ensuring high performance in audio and RF circuits.

Package Shape: ROUND

Allows for easy mounting and integration in circular layouts.

Terminal Form: THROUGH-HOLE

Facilitates easy soldering and reliable connections in circuit boards.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Suitable for high-frequency applications, providing excellent performance in RF circuits.

No. of Terminals: 3

Provides necessary connections for proper functionality without excess pins.

Package Style (Meter): CYLINDRICAL

Space-saving design that allows for efficient use of board space.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, ensuring reliable performance in various environments.

Maximum Collector-Base Capacitance: 3 pF

Low capacitance value enhances performance in high-frequency applications.

Maximum Collector-Emitter Voltage: 15 V

Suitable for applications requiring voltage regulation and protection.

Transistor Element Material: SILICON

Silicon material provides reliable and stable performance over a wide range of temperatures.

Maximum Collector Current (IC): 0.05 A

Sufficient current handling capability for many small signal applications.

Terminal Finish: TIN LEAD

Provides good solderability and conductivity for robust connections.

Terminal Position: BOTTOM

Facilitates easy mounting and integration in PCB layouts.

Nominal Transition Frequency (fT): 600 MHz

High transition frequency enables fast switching and amplification, ideal for RF applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) MPS918RL1 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

3 pF

Maximum Collector-Emitter Voltage:

15 V

Configuration:

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPS918RL1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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