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PN5179

Onsemi

PN5179 by Onsemi

PN5179 by Onsemi is an NPN RF BJT transistor with a max VCEsat of 0.4V and min Gp of 15dB, ideal for amplifier applications in the very high frequency band. It has a max power dissipation of 0.6W, operating temperature up to 150 °C, and a transition frequency of 900MHz.

Median Price

$5.000

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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American Microsemiconductor Inc.

USA . 1,489 parts In-Stock

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Digiode

USA . 2,189 parts In-Stock

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Vyrian

USA . 1,231 parts In-Stock

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Anansix

USA . 874 parts In-Stock

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Corohmni

South Africa . 61 parts In-Stock

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Kulean Microsystems

USA . 7,058 parts In-Stock

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SupplyDigital Components

Austria . 5,341 parts In-Stock

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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TANS Electronics

Latvia . 1,612 parts In-Stock

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Corphita

USA . 1,476 parts In-Stock

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Problanco Electronics

Mexico . 803 parts In-Stock

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Supply Digital

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UHIMA Technologies

Türkiye . 225 parts In-Stock

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Overview

The PN5179 by Onsemi is a high-quality RF Small Signal Bipolar Junction Transistor that offers exceptional performance and reliability. Manufactured by Onsemi, a trusted leader in the industry, this NPN transistor is perfect for amplifier applications in the very high-frequency band. With features like a low VCEsat of 0.4V and a minimum power gain of 15dB, the PN5179 delivers superior results in a compact cylindrical package. Experience the value and benefits of this product, whether you're in the electronics, telecommunications, or automotive industry. Trust Onsemi to provide the solutions you need for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor suitable for amplifier applications.

Configuration: SINGLE

Simplified design and easy integration into circuits with a single configuration.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in amplification tasks.

Maximum VCEsat: 0.4 V

Low saturation voltage helps in reducing power dissipation and improving efficiency of the amplifier.

Minimum Power Gain (Gp): 15 dB

High power gain ensures that the transistor can amplify signals effectively in various scenarios.

Package Shape: ROUND

Round package shape allows for easier handling and mounting in circuits.

Terminal Form: THROUGH-HOLE

Through-hole terminals make soldering and connecting the transistor easier and more secure.

Highest Frequency Band: VERY HIGH FREQUENCY BAND

Suitable for applications requiring very high frequency operation, such as RF amplification.

No. of Terminals: 3

Simple 3-terminal configuration for easy integration into circuits.

Maximum Power Dissipation (Abs): 0.6 W

With a maximum power dissipation of 0.6W, this transistor can handle power efficiently in amplifier circuits.

Package Style (Meter): CYLINDRICAL

Cylindrical package style provides a compact form factor for space-constrained applications.

Minimum DC Current Gain (hFE): 25

High DC current gain ensures stable and reliable amplification of signals.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures up to 150 °C, suitable for various industrial and automotive applications.

Maximum Collector-Base Capacitance: 1 pF

Low collector-base capacitance helps in reducing signal distortion in high-frequency applications.

Maximum Collector-Emitter Voltage: 12 V

Can handle a maximum voltage of 12V, suitable for various voltage amplification tasks.

Transistor Element Material: SILICON

Silicon material provides good performance characteristics and reliability for the transistor.

Maximum Collector Current (IC): 0.025 A

Can handle a maximum collector current of 0.025A, suitable for low to moderate current amplification tasks.

Terminal Finish: Tin/Lead (Sn/Pb)

Tin/Lead terminal finish ensures good solderability and long-term reliability in circuit connections.

Terminal Position: BOTTOM

Bottom terminal position allows for easy PCB mounting and soldering.

Nominal Transition Frequency (fT): 900 MHz

High nominal transition frequency of 900MHz enables reliable amplification of high-frequency signals.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) PN5179 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

1 pF

Maximum Collector-Emitter Voltage:

12 V

Configuration:

Minimum DC Current Gain (hFE):

25

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Minimum Power Gain (Gp):

15 dB

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.4 V

Trade Compliance

PN5179 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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