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BF776H6327XTSA1

Infineon Technologies

BF776H6327XTSA1 by Infineon Technologies

Infineon's BF776H6327XTSA1 is a NPN BJT transistor for ultra-high frequency amplification. With 4 terminals, it operates at max 150°C and has a fT of 46GHz. Its plastic package with gull wing terminals makes it suitable for surface mount applications.

Median Price

$0.243

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 1,029 parts In-Stock

1+ parts

$0.105

100+ parts

-

1k+ parts

-

10k+ parts

-

1,029

$0.105

-

-

-

Newark

USA . 14,920 parts In-Stock

1+ parts

$0.412

100+ parts

$0.219

1k+ parts

$0.184

10k+ parts

-

14,920

$0.412

$0.219

$0.184

-

DigiKey

USA . 11,999 parts In-Stock

1+ parts

$0.460

100+ parts

$0.247

1k+ parts

$0.208

10k+ parts

-

11,999

$0.460

$0.247

$0.208

-

Mouser Electronics

USA . 11,219 parts In-Stock

1+ parts

$0.520

100+ parts

$0.296

1k+ parts

$0.148

10k+ parts

$0.147

11,219

$0.520

$0.296

$0.148

$0.147

Rochester

USA . 47,680 parts In-Stock

1+ parts

-

100+ parts

$0.195

1k+ parts

$0.162

10k+ parts

$0.144

47,680

-

$0.195

$0.162

$0.144

Verical

USA . 15,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.181

15,000

-

-

-

$0.181

Farnell

UK . 14,920 parts In-Stock

1+ parts

-

100+ parts

$0.176

1k+ parts

$0.156

10k+ parts

$0.146

14,920

-

$0.176

$0.156

$0.146

Element14

Singapore . 14,920 parts In-Stock

1+ parts

-

100+ parts

$0.291

1k+ parts

$0.241

10k+ parts

$0.230

14,920

-

$0.291

$0.241

$0.230

RS (Exports)

UK . 11,900 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.390

10k+ parts

$0.276

11,900

-

-

$0.390

$0.276

Chip1Stop

Japan . 11,600 parts In-Stock

1+ parts

-

100+ parts

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11,600

-

-

-

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Avnet

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.121

3,000

-

-

-

$0.121

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 319 parts In-Stock

1+ parts

$0.154

100+ parts

-

1k+ parts

-

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319

$0.154

-

-

-

Digiode

USA . 168 parts In-Stock

1+ parts

$0.156

100+ parts

-

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168

$0.156

-

-

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VNN

France . 2,835 parts In-Stock

1+ parts

-

100+ parts

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2,835

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Nova Conductors

Japan . 50 parts In-Stock

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50

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Continental Prestige Electronics

USA . 11,825 parts In-Stock

1+ parts

$0.092

100+ parts

-

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-

10k+ parts

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11,825

$0.092

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-

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Ampacity Inc.

Singapore . 13,850 parts In-Stock

1+ parts

$0.119

100+ parts

-

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-

10k+ parts

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13,850

$0.119

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-

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Corphita

USA . 8 parts In-Stock

1+ parts

$0.148

100+ parts

-

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8

$0.148

-

-

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Modulus Dynamics

Lithuania . 6,771 parts In-Stock

1+ parts

$1.492

100+ parts

$1.432

1k+ parts

$1.373

10k+ parts

-

6,771

$1.492

$1.432

$1.373

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Corohmni

South Africa . 43 parts In-Stock

1+ parts

$1.523

100+ parts

-

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43

$1.523

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Perfect Parts

USA . 76,359 parts In-Stock

1+ parts

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100+ parts

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76,359

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Lixinc

USA . 13,291 parts In-Stock

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13,291

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Argo Parts USA

USA . 4,349 parts In-Stock

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4,349

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Aranea Global

USA . 2,000 parts In-Stock

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2,000

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Overview

Unleash the power of cutting-edge technology with the BF776H6327XTSA1 by Infineon Technologies. Crafted with precision and expertise, this RF Small Signal BJT transistor offers unparalleled performance in amplifier applications. With a focus on quality and innovation, Infineon Technologies delivers a product that exceeds expectations. Embrace the advantages of ultra-high frequency band coverage and seamless integration with its small outline package style. Elevate your projects with the reliability and efficiency that only Infineon Technologies can provide. Experience the difference with the BF776H6327XTSA1.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection, making the transistor durable and long-lasting.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifiers and switching circuits, making this product versatile for different applications.

Configuration: SINGLE

Single configuration simplifies circuit design and reduces complexity, making it easier to use in various electronic projects.

Transistor Application: AMPLIFIER

Designed specifically for amplification tasks, ensuring optimal performance in signal boosting applications.

Surface Mount: YES

Surface mount capability enables easy and efficient PCB assembly, saving time and effort in production.

Maximum Operating Temperature: 150 °C

Can operate in high-temperature environments without performance degradation, suitable for demanding applications.

Maximum Collector-Emitter Voltage: 4 V

High collector-emitter voltage rating allows for reliable operation under varying voltage conditions.

Nominal Transition Frequency (fT): 46000 MHz

High transition frequency indicates fast switching speeds, making it ideal for high-frequency applications such as radio frequency circuits.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) BF776H6327XTSA1 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Infineon Technologies

Specs

Additional Features:

LOW NOISE

Case Connection:

EMITTER

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

.2 pF

Maximum Collector-Emitter Voltage:

4 V

Configuration:

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-PDSO-G4

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BF776H6327XTSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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