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BF776H6327

Infineon Technologies

BF776H6327 by Infineon Technologies

Infineon Technologies' BF776H6327 is an NPN RF BJT transistor for ultra-high frequency applications. With a max fT of 46 GHz, it operates at up to 150°C and has a collector-emitter voltage of 4V. Ideal for amplifiers, this transistor comes in a small outline package with gull wing terminals.

Median Price

$0.171

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 15,000 parts In-Stock

1+ parts

$0.172

100+ parts

$0.162

1k+ parts

$0.146

10k+ parts

-

15,000

$0.172

$0.162

$0.146

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DigiKey

USA . 15,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.170

10k+ parts

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15,000

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-

$0.170

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Distributors (In-Stock)

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Digiode

USA . 363 parts In-Stock

1+ parts

$0.164

100+ parts

-

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363

$0.164

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Vyrian

USA . 549 parts In-Stock

1+ parts

$0.170

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549

$0.170

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ComSIT Distribution GmbH

Germany . 3,000 parts In-Stock

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3,000

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Distributors (Availability)

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Native Components

USA . 231 parts In-Stock

1+ parts

$0.103

100+ parts

-

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$0.099

231

$0.103

-

-

$0.099

Northwest PG Solutions

USA . 1,086 parts In-Stock

1+ parts

$0.113

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$0.100

1,086

$0.113

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$0.100

Corphita

USA . 258 parts In-Stock

1+ parts

$0.155

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258

$0.155

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Modulus Dynamics

Lithuania . 10,318 parts In-Stock

1+ parts

$0.403

100+ parts

$0.387

1k+ parts

$0.371

10k+ parts

-

10,318

$0.403

$0.387

$0.371

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Perfect Parts

USA . 66,615 parts In-Stock

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66,615

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A-Z Elektronik GmbH

Germany . 19,988 parts In-Stock

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19,988

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Kepictronics

USA . 5,500 parts In-Stock

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Assy Fe

Spain . 4,686 parts In-Stock

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4,686

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Alle Elektronik GmbH

Germany . 3,670 parts In-Stock

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Lixinc

USA . 3,030 parts In-Stock

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3,030

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Andel Nordic

Denmark . 502 parts In-Stock

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502

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Futuretech Components

Singapore . 400 parts In-Stock

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400

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Overview

Infineon RF Transistors include Low Noise Amplifiers and High Linearity Transistors. Devices in the Low Noise category are based on silicon bipolar technology. Moderate transition frequency of fT <20 GHz provides ease of use and stability. Breakdown voltage can safely support supply voltage of 5V. These transistors are suitable for use with AM over VHF/UHF up to 14GHz. High Linearity Transistors provide OIP3 (Output 3rd Order Intercept Point) above 29dBm. They are based on Infineon's high volume silicon bipolar and SiGe:C technologies for best in class noise figures. These devices are ideal for drivers, pre-amplifiers, and buffer amplifiers.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides a lightweight and durable housing for the transistor, making it suitable for portable and rugged applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor ideal for amplifier applications.

Configuration: SINGLE

Simplifies circuit design and integration, making it easy to use in various amplifier configurations.

Transistor Application: AMPLIFIER

Designed specifically for amplification purposes, ensuring optimal performance in amplifier circuits.

Surface Mount: YES

Facilitates easy and efficient PCB assembly, saving time and cost during production.

Package Shape: RECTANGULAR

Compact rectangular shape saves space on the PCB and allows for efficient layout design.

Terminal Form: GULL WING

Gull wing terminals provide strong mechanical support and solder connections, ensuring reliability in operation.

Maximum Operating Temperature: 150 °C

Can withstand high temperature environments, making it suitable for a wide range of operating conditions.

Maximum Collector-Base Capacitance: 0.2 pF

Low collector-base capacitance minimizes signal distortion and improves high-frequency performance.

Maximum Collector-Emitter Voltage: 4 V

Provides a high collector-emitter voltage rating, enhancing the transistor's voltage handling capabilities.

Maximum Collector Current (IC): 0.05 A

Allows for efficient current handling, ensuring stable and reliable operation in amplifier circuits.

Nominal Transition Frequency (fT): 46000 MHz

High transition frequency enables the transistor to operate at ultra-high frequencies, making it suitable for high-speed applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) BF776H6327 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Infineon Technologies

Specs

Additional Features:

LOW NOISE

Case Connection:

EMITTER

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

.2 pF

Maximum Collector-Emitter Voltage:

4 V

Configuration:

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-PDSO-G4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BF776H6327 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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