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BF771E6327HTSA1

Infineon Technologies

BF771E6327HTSA1 by Infineon Technologies

Infineon's BF771E6327HTSA1 is a NPN BJT transistor with 12V VCEO, 8000MHz fT, and 0.08A IC. Ideal for amplifier applications, it comes in a small outline package with Gull Wing terminals for surface mount assembly. Operating up to 150°C, it features low collector-base capacitance of 1pF.

Median Price

$0.304

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 42 parts In-Stock

1+ parts

$0.304

100+ parts

$0.145

1k+ parts

$0.132

10k+ parts

$0.115

42

$0.304

$0.145

$0.132

$0.115

Mouser Electronics

USA . 22,582 parts In-Stock

1+ parts

$0.310

100+ parts

$0.152

1k+ parts

$0.138

10k+ parts

$0.124

22,582

$0.310

$0.152

$0.138

$0.124

Newark

USA . 17,219 parts In-Stock

1+ parts

$0.319

100+ parts

$0.169

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$0.141

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-

17,219

$0.319

$0.169

$0.141

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DigiKey

USA . 13,788 parts In-Stock

1+ parts

$0.370

100+ parts

$0.193

1k+ parts

$0.162

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13,788

$0.370

$0.193

$0.162

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EBV Elektronik

Germany . 87,000 parts In-Stock

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87,000

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RS (Exports)

UK . 17,900 parts In-Stock

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$0.194

10k+ parts

$0.139

17,900

-

-

$0.194

$0.139

Chip1Stop

Japan . 14,290 parts In-Stock

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14,290

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Farnell

UK . 2,224 parts In-Stock

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-

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$0.222

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$0.156

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$0.126

2,224

-

$0.222

$0.156

$0.126

Element14

Singapore . 2,224 parts In-Stock

1+ parts

-

100+ parts

$0.322

1k+ parts

$0.184

10k+ parts

$0.181

2,224

-

$0.322

$0.184

$0.181

Verical

USA . 2,128 parts In-Stock

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$0.138

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2,128

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$0.138

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Rochester

USA . 789 parts In-Stock

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-

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$0.147

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$0.122

10k+ parts

$0.109

789

-

$0.147

$0.122

$0.109

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 332 parts In-Stock

1+ parts

$0.079

100+ parts

-

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332

$0.079

-

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Digiode

USA . 425 parts In-Stock

1+ parts

$0.087

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425

$0.087

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NAC Semi

USA . 42,000 parts In-Stock

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$0.468

42,000

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$0.468

Nova Conductors

Japan . 69 parts In-Stock

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69

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VNN

France . 10 parts In-Stock

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10

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Distributors (Availability)

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Corphita

USA . 468 parts In-Stock

1+ parts

$0.083

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468

$0.083

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Modulus Dynamics

Lithuania . 8,670 parts In-Stock

1+ parts

$1.084

100+ parts

$1.041

1k+ parts

$0.997

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8,670

$1.084

$1.041

$0.997

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Corohmni

South Africa . 40 parts In-Stock

1+ parts

$1.395

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40

$1.395

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Eastek

USA . 39,000 parts In-Stock

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39,000

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Perfect Parts

USA . 23,789 parts In-Stock

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23,789

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Infinite Electronics LLP (Excess)

. 12,004 parts In-Stock

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Metaverse IC Inc.

Canada . 12,000 parts In-Stock

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A-Z Elektronik GmbH

Germany . 8,114 parts In-Stock

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Authorized Procurement Solutions

USA . 8,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 6,214 parts In-Stock

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Argo Parts USA

USA . 4,841 parts In-Stock

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4,841

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Continental Prestige Electronics

USA . 4,568 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,409 parts In-Stock

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Aranea Global

USA . 2,000 parts In-Stock

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2,000

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Overview

Enhance the performance of your electronic devices with the BF771E6327HTSA1 by Infineon Technologies. Trusted for its top-tier quality and reliability, Infineon Technologies delivers exceptional RF Small Signal Bipolar Junction Transistors that cater to a wide range of applications including amplifiers. With a compact design and high operating temperature, this NPN transistor offers unbeatable value and efficiency. Upgrade your projects with the best in the market and experience the difference with Infineon Technologies.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good mechanical strength and thermal performance for reliable operation.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifier circuits for their high input impedance and low output impedance.

Configuration: SINGLE

Simplifies circuit design and reduces complexity.

Transistor Application: AMPLIFIER

Specifically designed for amplification applications, ensuring optimal performance.

Surface Mount: YES

Ease of installation and space-saving design.

Package Shape: RECTANGULAR

Facilitates easy mounting and integration into circuit boards.

Terminal Form: GULL WING

Provides secure connections for reliable performance.

No. of Terminals: 3

Simplifies circuit connections and reduces complexity.

Package Style (Meter): SMALL OUTLINE

Compact size for efficient use of board space.

Maximum Operating Temperature: 150 °C

Ensures reliable operation under normal operating conditions.

Maximum Collector-Base Capacitance: 1 pF

Low capacitance for high-frequency applications.

Maximum Collector-Emitter Voltage: 12 V

Suitable for low-power applications within specified voltage ratings.

Transistor Element Material: SILICON

Provides high performance and reliability for the transistor.

Maximum Collector Current (IC): 0.08 A

Adequate current handling capability for many amplifier applications.

Terminal Position: DUAL

Facilitates easy and secure connections in circuit designs.

Peak Reflow Temperature °C: 260

Can withstand high reflow temperatures during manufacturing processes.

Nominal Transition Frequency (fT): 8000 MHz

High transition frequency for high-frequency signal amplification applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) BF771E6327HTSA1 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Infineon Technologies

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

1 pF

Maximum Collector-Emitter Voltage:

12 V

Configuration:

JESD-30 Code:

R-PDSO-G3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BF771E6327HTSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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