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BFG540/X,215

NXP Semiconductors

BFG540/X,215 by NXP Semiconductors

NXP Semiconductors' BFG540/X,215 is a NPN RF BJT with 4 terminals in a small outline package. It operates in L Band with fT of 9000 MHz and can handle 0.12 A collector current. Ideal for amplifier applications, it has a max power dissipation of 0.5 W at 150°C ambient temperature.

Median Price

$0.293

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 10 parts In-Stock

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$0.293

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Vyrian

USA . 5,280 parts In-Stock

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Digiode

USA . 2,725 parts In-Stock

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Anansix

USA . 2,189 parts In-Stock

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Bristol Electronics

USA . 1,532 parts In-Stock

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Legend Electronics Inc.

USA . 350 parts In-Stock

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350

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VNN

France . 50 parts In-Stock

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Distributors (Availability)

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Argo Parts USA

USA . 4,688 parts In-Stock

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$0.293

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$0.284

4,688

$0.293

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$0.284

Continental Prestige Electronics

USA . 3,526 parts In-Stock

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$0.293

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$0.287

3,526

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Netroflash

USA . 2,000 parts In-Stock

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$0.293

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$0.278

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$0.272

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$0.293

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$0.272

Advanced Electronics

New Zealand . 500 parts In-Stock

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$2.071

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$1.885

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$1.698

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$2.071

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AZTECH Wire

Italy . 335 parts In-Stock

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$14.503

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One Stop Electronics

USA . 1,338 parts In-Stock

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$43.050

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Ampacity Inc.

Singapore . 439 parts In-Stock

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$54.050

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QUARKTWIN TECHNOLOGY LTD

USA . 14,051 parts In-Stock

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UNI Independent Distributors

Spain . 5,420 parts In-Stock

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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Microchip USA

USA . 4,841 parts In-Stock

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Corphita

USA . 2,290 parts In-Stock

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GreenTree Electronics

Israel . 1,532 parts In-Stock

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Perfect Parts

USA . 515 parts In-Stock

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515

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Overview

Unlock superior performance with the BFG540/X,215 by NXP Semiconductors, a cutting-edge RF Small Signal Bipolar Junction Transistor. From its NPN configuration to its high transition frequency of 9000 MHz, this transistor is designed for excellence in amplifier applications. With a maximum power dissipation of 0.5W and a dual terminal finish, this product offers exceptional reliability and efficiency. Trust NXP Semiconductors to deliver top-quality components that elevate your projects to the next level. Elevate your designs with the BFG540/X,215 and experience unmatched performance and value.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protects the internal components of the transistor.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification, making this transistor suitable for amplifier applications.

Configuration: SINGLE

Simplifies the setup and integration of the transistor in electronic circuits.

Transistor Application: AMPLIFIER

Specifically designed for amplification purposes, ensuring optimal performance in amplifier circuits.

Surface Mount: YES

Enables easy and secure mounting on circuit boards for streamlined manufacturing processes.

Package Shape: RECTANGULAR

Facilitates efficient placement and alignment on PCBs, optimizing space utilization.

Highest Frequency Band: L BAND

Suitable for operating in the L band frequencies, making it ideal for a range of RF applications.

No. of Terminals: 4

Provides multiple connection points for enhanced flexibility in circuit design.

Maximum Power Dissipation (Abs): 0.5 W

Capable of handling high power levels without overheating, ensuring reliability in operation.

Package Style (Meter): SMALL OUTLINE

Compact design makes it suitable for space-constrained applications while maintaining high performance.

Maximum Power Dissipation Ambient: 0.5 W

Maintains consistent power dissipation levels in varying ambient conditions for reliable performance.

Minimum DC Current Gain (hFE): 60

Ensures proper amplification of input signals with a minimum DC current gain value.

Maximum Operating Temperature: 150 °C

Can operate effectively at high temperatures without compromising performance.

Transistor Element Material: SILICON

Silicon-based construction provides stability and efficiency in signal amplification.

Maximum Collector Current (IC): 0.12 A

Capable of handling high collector currents, making it suitable for a variety of applications.

Terminal Finish: Matte Tin (Sn)

Matte tin finish offers good solderability and corrosion resistance for reliable connections.

Terminal Position: DUAL

Dual terminal position allows for flexibility in mounting and connection options.

Case Connection: COLLECTOR

Collector connection simplifies circuit design and integration.

Maximum Time At Peak Reflow Temperature (s): 40

Can withstand peak reflow temperatures for a specified duration without adverse effects.

Peak Reflow Temperature °C: 260

Capable of withstanding high reflow temperatures during the manufacturing process.

Reference Standard: CECC

Meets industry standards for reliability and performance in RF applications.

Nominal Transition Frequency (fT): 9000 MHz

High transition frequency enables efficient amplification of high-frequency signals.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) BFG540/X,215 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Additional Features:

HIGH RELIABILITY

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

60

Highest Frequency Band:

L BAND

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

.5 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Reference Standard:

CECC

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BFG540/X,215 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.75

SB

8541.21.00.80

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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