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BFU530WX

NXP Semiconductors

BFU530WX by NXP Semiconductors

The NXP Semiconductors BFU530WX is an RF BJT transistor with NPN polarity, suitable for amplifier applications in the L Band. It has a max operating temperature of 150°C, a collector-emitter voltage of 12V, and a transition frequency of 11GHz. This small outline transistor comes in a plastic/epoxy package with gull wing terminals for surface mount assembly.

Median Price

$0.277

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 1,242 parts In-Stock

1+ parts

$0.470

100+ parts

$0.252

1k+ parts

$0.201

10k+ parts

-

1,242

$0.470

$0.252

$0.201

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Mouser Electronics

USA . 4,865 parts In-Stock

1+ parts

$0.840

100+ parts

$0.345

1k+ parts

$0.260

10k+ parts

$0.257

4,865

$0.840

$0.345

$0.260

$0.257

Rochester

USA . 151,541 parts In-Stock

1+ parts

-

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$0.262

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$0.217

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$0.194

151,541

-

$0.262

$0.217

$0.194

Verical

USA . 146,330 parts In-Stock

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$0.242

146,330

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$0.242

DigiKey

USA . 4,852 parts In-Stock

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4,852

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Chip1Stop

Japan . 2,900 parts In-Stock

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$0.182

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$0.180

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2,900

-

$0.182

$0.180

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Element14

Singapore . 2,330 parts In-Stock

1+ parts

-

100+ parts

$0.292

1k+ parts

$0.234

10k+ parts

$0.216

2,330

-

$0.292

$0.234

$0.216

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,174 parts In-Stock

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$0.203

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2,174

$0.203

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Vyrian

USA . 3,925 parts In-Stock

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$0.204

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3,925

$0.204

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VNN

France . 16,793 parts In-Stock

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Anansix

USA . 2,270 parts In-Stock

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Nova Conductors

Japan . 700 parts In-Stock

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700

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Distributors (Availability)

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Ampacity Inc.

Singapore . 39,801 parts In-Stock

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$0.182

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39,801

$0.182

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Corphita

USA . 1,298 parts In-Stock

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$0.193

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$0.193

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Corohmni

South Africa . 317 parts In-Stock

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$1.580

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317

$1.580

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Kepictronics

USA . 306,000 parts In-Stock

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Continental Prestige Electronics

USA . 99,402 parts In-Stock

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$0.290

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$0.290

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Argo Parts USA

USA . 4,753 parts In-Stock

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4,753

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Perfect Parts

USA . 3,360 parts In-Stock

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3,360

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Aranea Global

USA . 500 parts In-Stock

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500

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UNI Independent Distributors

Spain . 450 parts In-Stock

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Overview

Unlock the power of seamless connectivity with the NXP Semiconductors BFU530WX RF Small Signal Bipolar Junction Transistor. Manufactured with top-notch quality and expertise, this NPN transistor is designed for amplifier applications in the L Band frequency range. With a maximum operating temperature of 150°C and a peak reflow temperature of 260°C, this transistor offers unmatched reliability and performance. Say goodbye to connectivity issues and hello to smooth, uninterrupted signals with the BFU530WX. Elevate your projects to the next level with this high-quality, versatile component.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection, making the transistor suitable for various applications.

Polarity or Channel Type: NPN

Offers efficient switching performance and low power consumption.

Transistor Application: AMPLIFIER

Ideal for amplifying signals in electronic circuits.

Surface Mount: YES

Enables easy and secure mounting on PCBs, saving space and simplifying assembly.

Maximum Operating Temperature: 150 °C

Ensures reliable performance even in high-temperature environments.

Maximum Collector-Emitter Voltage: 12 V

Suitable for applications requiring a voltage handling capacity up to 12 V.

Minimum Operating Temperature: -40 °C

Can operate efficiently in low-temperature environments without any issues.

Maximum Collector Current (IC): 0.04 A

Able to handle collector currents up to 0.04 A, making it suitable for low to medium current applications.

Nominal Transition Frequency (fT): 11000 MHz

High transition frequency allows for high-frequency signal amplification and performance.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) BFU530WX attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

12 V

Configuration:

Highest Frequency Band:

L BAND

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Reference Standard:

AEC-Q101; IEC-60134

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BFU530WX Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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