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BF224ZL1

Onsemi

BF224ZL1 by Onsemi

BF224ZL1 by Onsemi is a NPN BJT with max. 30V VCE, 0.05A IC, and 850MHz fT. Ideal for RF applications in the very high frequency band due to its SILICON transistor element and cylindrical package style. Operates at up to 150 °C with through-hole terminals for easy installation.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,762 parts In-Stock

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Vyrian

USA . 374 parts In-Stock

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TANS Electronics

Latvia . 8,368 parts In-Stock

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SupplyDigital Components

Austria . 7,441 parts In-Stock

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Problanco Electronics

Mexico . 6,860 parts In-Stock

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Kulean Microsystems

USA . 4,179 parts In-Stock

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Northwest PG Solutions

USA . 2,349 parts In-Stock

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Corphita

USA . 1,350 parts In-Stock

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Native Components

USA . 591 parts In-Stock

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Corohmni

South Africa . 353 parts In-Stock

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UHIMA Technologies

Türkiye . 341 parts In-Stock

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Overview

Unleash the potential of your RF projects with the BF224ZL1 by Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-notch quality and reliability in all their products. The RF Small Signal Bipolar Junction Transistor (BJT) offers exceptional performance in very high-frequency bands, making it perfect for applications that require precision and efficiency. With a maximum operating temperature of 150 °C and a collector-emitter voltage of 30V, this transistor is built to withstand even the toughest conditions. Trust Onsemi to deliver cutting-edge technology that brings value and benefits to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good protection for the transistor, making it durable and long-lasting.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this product versatile and suitable for a wide range of applications.

Configuration: SINGLE

The single configuration simplifies circuit design and allows for easy integration into electronic devices.

Package Shape: ROUND

The round shape of the package makes it easy to mount and ensures a compact design, saving space in the electronic device.

Highest Frequency Band: VERY HIGH FREQUENCY BAND

This transistor is capable of operating in very high frequency bands, suitable for applications requiring fast signal processing.

No. of Terminals: 3

With 3 terminals, this transistor can be easily connected in circuits, providing flexibility in design.

Package Style (Meter): CYLINDRICAL

The cylindrical package style is commonly used and easy to work with, facilitating the manufacturing process.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can withstand high temperatures, ensuring reliable performance under varying conditions.

Maximum Collector-Emitter Voltage: 30 V

The maximum collector-emitter voltage of 30 V allows for a wide range of voltage applications, making this transistor versatile.

Transistor Element Material: SILICON

Silicon is a popular material for transistors, known for its high performance and reliability.

Maximum Collector Current (IC): 0.05 A

With a maximum collector current of 0.05 A, this transistor can handle moderate current levels, suitable for many electronic applications.

Terminal Finish: TIN LEAD

The tin lead terminal finish provides good electrical conductivity and solderability, ensuring secure connections in the circuit.

Terminal Position: BOTTOM

The bottom terminal position makes it easy to mount and solder the transistor onto the circuit board, simplifying the assembly process.

Nominal Transition Frequency (fT): 850 MHz

With a nominal transition frequency of 850 MHz, this transistor is capable of high-speed signal processing, making it suitable for applications requiring fast response times.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) BF224ZL1 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BF224ZL1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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