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BF224RL

Onsemi

BF224RL by Onsemi

BF224RL by Onsemi is a NPN RF BJT with 30V VCEO, 850MHz fT, and 0.05A IC. Ideal for very high frequency applications in electronics due to its single configuration and through-hole terminal form. Operating at up to 150 °C, it is commonly used in RF amplifiers and oscillators.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,762 parts In-Stock

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Digiode

USA . 313 parts In-Stock

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Kulean Microsystems

USA . 4,343 parts In-Stock

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Problanco Electronics

Mexico . 3,614 parts In-Stock

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TANS Electronics

Latvia . 3,216 parts In-Stock

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Northwest PG Solutions

USA . 1,022 parts In-Stock

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SupplyDigital Components

Austria . 976 parts In-Stock

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Native Components

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UHIMA Technologies

Türkiye . 236 parts In-Stock

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Corphita

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Corohmni

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Overview

Unleash the power of connectivity with the Onsemi BF224RL RF Small Signal Bipolar Junction Transistor. Crafted by industry leader Onsemi, this NPN transistor delivers top-notch performance in the very high-frequency band, making it ideal for a wide range of applications. Whether you're looking to enhance your communication systems or amplify your signal processing capabilities, the BF224RL is your go-to solution. With a robust design and reliable construction, this transistor offers unmatched value and efficiency, ensuring that you stay ahead of the curve in today's fast-paced tech landscape. Elevate your projects with the BF224RL and experience the difference quality makes.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLastic/epoxy material provides durability and protection for the transistor, ensuring long-term reliability.

Polarity or Channel Type: NPN

NPN configuration allows for easy integration into existing circuits and compatibility with most common applications.

Configuration: SINGLE

Single configuration simplifies circuit design and board layout, making it easier for engineers to work with.

Package Shape: ROUND

Round package shape allows for easy mounting and alignment, reducing installation time and effort.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide a strong mechanical connection, making the transistor well-suited for harsh environments.

Highest Frequency Band: VERY HIGH FREQUENCY BAND

Very high frequency band capability allows for high-speed signal processing and communication applications.

No. of Terminals: 3

Three terminals provide flexibility in circuit design and allow for versatile applications.

Package Style (Meter): CYLINDRICAL

Cylindrical package style offers compact size and efficient use of space on circuit boards.

Maximum Operating Temperature: 150 °C

High maximum operating temperature ensures reliable performance even in hot environments.

Maximum Collector-Emitter Voltage: 30 V

High collector-emitter voltage rating allows for use in a wide range of voltage applications.

Transistor Element Material: SILICON

Silicon material offers high performance and reliability, making this transistor a top choice for many applications.

Maximum Collector Current (IC): 0.05 A

Maximum collector current rating of 0.05 A provides sufficient current-carrying capacity for many small signal applications.

Terminal Finish: TIN LEAD

Tin lead finish ensures strong solder connections and good electrical conductivity for optimal performance.

Terminal Position: BOTTOM

Bottom terminal position simplifies mounting and allows for easy connection to other circuit components.

Nominal Transition Frequency (fT): 850 MHz

High nominal transition frequency of 850 MHz indicates fast switching speeds and excellent high-frequency performance.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) BF224RL attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BF224RL Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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