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MPS6507

Onsemi

MPS6507 by Onsemi

MPS6507 by Onsemi is an NPN BJT transistor with a max operating temp of 150 °C. It has a min hFE of 25 and fT of 800 MHz, making it ideal for amplifier applications. The package style is cylindrical with through-hole terminals and a max power dissipation of 0.625W.

Median Price

$2.750

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

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Ace Electronics

USA . 22 parts In-Stock

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$2.000

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American Microsemiconductor Inc.

USA . 138 parts In-Stock

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$3.500

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Chip Stock

USA . 62,000 parts In-Stock

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Sensible Micro Corp

USA . 3,523 parts In-Stock

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Vyrian

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Anansix

USA . 1,291 parts In-Stock

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Digiode

USA . 1,065 parts In-Stock

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Sunrise Surplus Inc.

USA . 148 parts In-Stock

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MISTER SPROCKETS

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Electronic Expediters

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LittleDiode

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Sogenti Electronics

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Corohmni

South Africa . 184 parts In-Stock

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$0.292

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Modulus Dynamics

Lithuania . 500 parts In-Stock

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$2.060

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TANS Electronics

Latvia . 8,388 parts In-Stock

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SupplyDigital Components

Austria . 7,207 parts In-Stock

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Problanco Electronics

Mexico . 4,829 parts In-Stock

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Corphita

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Kulean Microsystems

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UHIMA Technologies

Türkiye . 663 parts In-Stock

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Overview

Discover the power of the MPS6507 by Onsemi, a top-quality RF Small Signal BJT transistor that delivers exceptional performance and reliability. With its NPN configuration and amplifier application, this transistor is perfect for a wide range of electronic projects. Manufactured by Onsemi, a trusted industry leader, the MPS6507 offers customers unbeatable value, benefits, and advantages. Whether you're working on amplifiers, oscillators, or other RF applications, this transistor is sure to exceed your expectations. Elevate your projects with the MPS6507 and experience superior performance like never before.

Feature Benefit Bullets

Package Body Material PLASTIC/EPOXY

Plastic/epoxy packaging makes the transistor lightweight and cost-effective.

Polarity or Channel Type NPN

NPN type transistors are commonly used in amplifier circuits, making this transistor suitable for amplifier applications.

Configuration SINGLE

Single configuration makes it easy to integrate into circuits without additional complexity.

Transistor Application AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in such circuits.

Package Shape ROUND

Round package shape provides ease of mounting and soldering.

Terminal Form THROUGH-HOLE

Through-hole terminals make it easy to solder onto PCBs, ensuring secure connections.

Maximum Power Dissipation (Abs) 0.625 W

High power dissipation capability allows for reliable operation under high load conditions.

Maximum Operating Temperature 150 °C

High maximum operating temperature ensures stability and performance in varying environmental conditions.

Maximum Collector-Base Capacitance 2.5 pF

Low collector-base capacitance minimizes signal distortion and improves high-frequency performance.

Maximum Collector-Emitter Voltage 20 V

Suitable for low-voltage applications, providing reliable performance within specified voltage range.

Nominal Transition Frequency (fT) 800 MHz

High transition frequency allows for fast switching speeds, making it suitable for high-frequency applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) MPS6507 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

2.5 pF

Maximum Collector-Emitter Voltage:

20 V

Configuration:

Minimum DC Current Gain (hFE):

25

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPS6507 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-493-0793, 5961004930793

NIIN

004930793

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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