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MPS6507RLRM

Onsemi

MPS6507RLRM by Onsemi

MPS6507RLRM by Onsemi is an NPN RF BJT transistor with a max collector-emitter voltage of 20V and a nominal transition frequency of 800MHz. It is commonly used as an amplifier in applications requiring high-frequency signal amplification. The transistor has a max operating temperature of 150 °C, making it suitable for various electronic devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,938 parts In-Stock

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Vyrian

USA . 181 parts In-Stock

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Problanco Electronics

Mexico . 8,311 parts In-Stock

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SupplyDigital Components

Austria . 4,451 parts In-Stock

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TANS Electronics

Latvia . 3,340 parts In-Stock

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Corphita

USA . 2,116 parts In-Stock

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Kulean Microsystems

USA . 2,009 parts In-Stock

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Corohmni

South Africa . 244 parts In-Stock

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UHIMA Technologies

Türkiye . 55 parts In-Stock

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Overview

Experience superior performance and reliability with the MPS6507RLRM RF Small Signal Bipolar Junction Transistor by Onsemi. Known for their exceptional quality and innovation, Onsemi delivers cutting-edge technology in every product they manufacture. Ideal for amplifier applications, this NPN transistor offers unmatched value and benefits to customers seeking high-quality components. Trust Onsemi for your electronic needs and elevate your projects to new heights with the MPS6507RLRM.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material, ideal for portable applications.

Polarity or Channel Type: NPN

Common type used in many applications, easy to find compatible components.

Configuration: SINGLE

Simplified design for easier integration into circuits.

Transistor Application: AMPLIFIER

Specifically designed for amplification, ensures optimal performance in amplifier circuits.

Package Shape: ROUND

Compact shape that allows for easy mounting in tight spaces.

No. of Terminals: 3

Simplified connection with fewer terminals, reducing chances of errors.

Package Style (Meter): CYLINDRICAL

Easily fits into cylindrical mounting sockets for secure placement.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without degradation, suitable for demanding environments.

Maximum Collector-Base Capacitance: 2.5 pF

Low capacitance minimizes signal loss and distortion.

Maximum Collector-Emitter Voltage: 20 V

Sufficient voltage rating for most small signal applications.

Transistor Element Material: SILICON

Reliable and widely used material for transistors.

Maximum Collector Current (IC): 0.05 A

Suitable for low power applications, conserves power and reduces heat generation.

Terminal Finish: TIN LEAD

Quality finish for reliable electrical connections.

Terminal Position: BOTTOM

Easy to solder in place for secure connections.

Nominal Transition Frequency (fT): 800 MHz

High transition frequency for fast switching and high-frequency applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) MPS6507RLRM attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

2.5 pF

Maximum Collector-Emitter Voltage:

20 V

Configuration:

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPS6507RLRM Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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