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2N917

Texas Instruments

2N917 by Texas Instruments

2N917 by Texas Instruments is an NPN RF BJT transistor with a max collector-emitter voltage of 15V and max collector-base capacitance of 1.7pF. Ideal for ultra-high frequency band applications, this single configuration transistor in a cylindrical package is commonly used as an amplifier in electronic circuits.

Median Price

$2.990

Lifecycle Status

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Freelance Electronics

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TEDSS.com

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American Microsemiconductor Inc.

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ACDS - Activité Composants Distribution Service

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MISTER SPROCKETS

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Fibra_Brandt Electronic GMBH

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ECAB

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Odi Ramu Company

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Mil-Aero Solutions, Inc.

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Lakeland Logistics Inc

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Bristol Electronics

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LittleDiode

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Elcom Components

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Parana Technologies

USA . 2,201 parts In-Stock

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DigiPath Technology Company

USA . 1,887 parts In-Stock

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$1.673

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$1.539

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ChromeModa Solutions

Germany . 3,817 parts In-Stock

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IDEA Electronic Components Group

UK . 1,818 parts In-Stock

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Corohmni

South Africa . 114 parts In-Stock

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One Stop Electronics

USA . 1,330 parts In-Stock

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AZTECH Wire

Italy . 889 parts In-Stock

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Corphita

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Kulean Microsystems

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Problanco Electronics

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TANS Electronics

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RTC Component Inc.

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Overview

Unleash the power of cutting-edge technology with the Texas Instruments 2N917, a premium RF Small Signal Bipolar Junction Transistor designed for amplification in the ultra-high frequency band. Crafted with precision and expertise, this NPN transistor offers unparalleled performance and reliability. Whether you're amplifying signals or boosting radio frequencies, the 2N917 is your go-to solution for seamless connectivity and enhanced efficiency. Elevate your projects to new heights with the innovative design and superior quality of Texas Instruments' 2N917.

Feature Benefit Bullets

Package Body Material: METAL

Metal package provides excellent thermal conductivity, allowing for efficient heat dissipation and ensuring reliability in high power applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification applications due to their high input impedance and low output impedance, making this product suitable for amplifier circuits.

Configuration: SINGLE

Single configuration simplifies design and integration into circuits, making it easier to use in amplifier applications.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in amplifying signals.

Package Shape: ROUND

Round package shape allows for easy mounting and integration into circular designs without sharp edges that could cause handling issues.

Terminal Form: WIRE

Wire terminals provide a secure connection and make it easy to solder the transistor into circuits without the need for additional mounting hardware.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Suitable for ultra high frequency applications, ensuring optimal performance in high-speed signal processing.

No. of Terminals: 4

4 terminals allow for more versatile connection options and potential for additional features in circuits.

Package Style (Meter): CYLINDRICAL

Cylindrical package style provides a compact and sturdy design, ideal for space-constrained applications.

Maximum Collector-Base Capacitance: 1.7 pF

Low collector-base capacitance helps improve high-frequency performance and reduce signal distortion in amplifier circuits.

Maximum Collector-Emitter Voltage: 15 V

High collector-emitter voltage rating allows for operation in a wide range of voltage conditions, making it versatile for different amplifier applications.

Transistor Element Material: SILICON

Silicon material provides excellent performance characteristics, such as high gain, low noise, and reliability, ensuring consistent amplification.

Terminal Position: BOTTOM

Bottom terminal position makes it easy to mount and solder the transistor onto PCBs, enhancing ease of use during circuit assembly.

Case Connection: ISOLATED

Isolated case connection helps prevent unwanted coupling or interference between the transistor and other components, ensuring stable performance in amplifier circuits.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) 2N917 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Case Connection:

ISOLATED

Maximum Collector-Base Capacitance:

1.7 pF

Maximum Collector-Emitter Voltage:

15 V

Configuration:

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-72

JESD-30 Code:

O-MBCY-W4

No. of Elements:

1

No. of Terminals:

4

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

2N917 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-087-5801, 5961000875801, 5961-00-953-4485, 5961009534485, 5961-00-997-9599, 5961009979599, 5961-14-242-9379, 5961142429379

NIIN

000875801, 009534485, 009979599, 142429379

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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