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MPSA10

Onsemi

MPSA10 by Onsemi

MPSA10 by Onsemi is an NPN BJT transistor with a max collector-emitter voltage of 25V and fT of 650MHz. It is used in RF applications due to its ultra-high frequency band capability. The package style is cylindrical with through-hole terminals, making it suitable for various electronic designs.

Median Price

$0.675

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Master Electronics

USA . 267 parts In-Stock

1+ parts

$1.320

100+ parts

$0.771

1k+ parts

$0.131

10k+ parts

$0.091

267

$1.320

$0.771

$0.131

$0.091

Rochester

USA . 1,660 parts In-Stock

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-

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$0.030

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$0.025

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$0.023

1,660

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$0.030

$0.025

$0.023

Distributors (In-Stock)

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Digiode

USA . 1,658 parts In-Stock

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$0.024

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1,658

$0.024

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Vyrian

USA . 3,274 parts In-Stock

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$0.025

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3,274

$0.025

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American Microsemiconductor Inc.

USA . 200 parts In-Stock

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$0.890

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$0.890

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J2 Sourcing AB

Sweden . 38,210 parts In-Stock

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Halfin

Belgium . 19,050 parts In-Stock

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Anansix

USA . 2,534 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 995 parts In-Stock

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995

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Electronic Expediters

USA . 325 parts In-Stock

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325

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R&J Components

USA . 141 parts In-Stock

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Electronics Depot

USA . 100 parts In-Stock

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MISTER SPROCKETS

USA . 41 parts In-Stock

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LittleDiode

UK . 2 parts In-Stock

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Fibra_Brandt Electronic GMBH

Germany . 2 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 1,040 parts In-Stock

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$0.022

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$0.022

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Corohmni

South Africa . 407 parts In-Stock

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$0.025

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407

$0.025

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Component Stockers USA

USA . 512 parts In-Stock

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$99.990

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512

$99.990

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Infinite Electronics LLP (Excess)

. 38,219 parts In-Stock

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Metaverse IC Inc.

Canada . 36,530 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 17,121 parts In-Stock

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TANS Electronics

Latvia . 6,559 parts In-Stock

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Kulean Microsystems

USA . 6,540 parts In-Stock

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Problanco Electronics

Mexico . 6,508 parts In-Stock

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SupplyDigital Components

Austria . 4,817 parts In-Stock

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Glotronic Ltd.

UK . 1,800 parts In-Stock

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Supply Digital

USA . 1,253 parts In-Stock

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UHIMA Technologies

Türkiye . 756 parts In-Stock

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Assy Fe

Spain . 60 parts In-Stock

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60

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Overview

Unlock the power of high-performance RF signal amplification with the MPSA10 by Onsemi. Crafted with precision and quality in mind, this NPN transistor offers unparalleled reliability and performance in ultra-high frequency applications. Ideal for a wide range of electronic devices, the MPSA10 ensures seamless connectivity and enhanced signal transmission. Experience the difference with Onsemi's cutting-edge technology and elevate your projects to new heights. Choose the MPSA10 and revolutionize your designs today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring long-lasting performance.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor suitable for a wide range of applications.

Configuration: SINGLE

Simplifies circuit design by using a single transistor, reducing complexity and potential points of failure.

Package Shape: ROUND

Allows for easy mounting and installation, especially in applications where space is limited.

Terminal Form: THROUGH-HOLE

Facilitates easy soldering onto a circuit board, making assembly quick and efficient.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Suitable for high-frequency applications, ensuring reliable signal amplification and transmission.

No. of Terminals: 3

Provides the necessary connections for proper operation while keeping the design simple and compact.

Package Style (Meter): CYLINDRICAL

Offers a compact and space-saving design, making it ideal for applications where size is a consideration.

Maximum Operating Temperature: 150 °C

Can withstand high operating temperatures, ensuring reliable performance even in challenging environments.

Maximum Collector-Base Capacitance: 0.7 pF

Low collector-base capacitance minimizes signal distortion, making the transistor suitable for high-frequency applications.

Maximum Collector-Emitter Voltage: 25 V

Suitable for low-power applications, offering enough voltage handling capability for various circuit designs.

Transistor Element Material: SILICON

Silicon transistors offer high reliability and performance, making this transistor a dependable choice for electronic circuits.

Terminal Finish: TIN LEAD

Provides good solderability and conductivity for reliable connections, ensuring stable performance in the circuit.

Terminal Position: BOTTOM

Simplifies placement and connection of the transistor in a circuit layout, facilitating smooth assembly.

Nominal Transition Frequency (fT): 650 MHz

High transition frequency allows for fast signal switching and amplification, making the transistor suitable for high-speed applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) MPSA10 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector-Base Capacitance:

.7 pF

Maximum Collector-Emitter Voltage:

25 V

Configuration:

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPSA10 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-146-4552, 5961001464552

NIIN

001464552

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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