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2SC2814-5

Onsemi

2SC2814-5 by Onsemi

Onsemi's 2SC2814-5 is an NPN RF BJT transistor with a max fT of 320 MHz. It has a max IC of 0.03 A and hFE of 135, suitable for amplifier applications in the VHF band. The package is a small outline with gull wing terminals, making it ideal for surface mount designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,129 parts In-Stock

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Vyrian

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Native Components

USA . 116 parts In-Stock

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$10.102

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Northwest PG Solutions

USA . 899 parts In-Stock

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SupplyDigital Components

Austria . 8,181 parts In-Stock

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TANS Electronics

Latvia . 6,651 parts In-Stock

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Problanco Electronics

Mexico . 6,347 parts In-Stock

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Kulean Microsystems

USA . 5,701 parts In-Stock

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Corphita

USA . 1,322 parts In-Stock

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Corohmni

South Africa . 189 parts In-Stock

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UHIMA Technologies

Türkiye . 121 parts In-Stock

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Overview

Discover the power of the 2SC2814-5 by Onsemi, a top-of-the-line RF Small Signal Bipolar Junction Transistor designed for high-frequency applications. With Onsemi's reputation for quality and innovation, this transistor offers unmatched performance and reliability. Whether you're looking to amplify signals or enhance your electronic projects, the 2SC2814-5 delivers exceptional value and benefits. Experience the advantages of this NPN transistor in a convenient small outline package, perfect for your next project. Elevate your designs with the cutting-edge technology of Onsemi's 2SC2814-5.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the transistor.

Polarity or Channel Type: NPN

Common type of BJT, making it compatible with many circuit designs and applications.

Configuration: SINGLE

Simplified design for easy integration into circuits and systems.

Transistor Application: AMPLIFIER

Optimized for amplification purposes, providing high performance in signal amplification tasks.

Surface Mount: YES

Allows for easy and convenient installation onto circuit boards without the need for additional components.

Maximum Power Dissipation (Abs): 0.15 W

Can handle moderate power levels without overheating, ensuring reliable operation.

Maximum Collector-Emitter Voltage: 20 V

Suitable for low voltage applications, ensuring safe operation within specified voltage limits.

Nominal Transition Frequency (fT): 320 MHz

High transition frequency allows for fast switching speeds and high-frequency operation, making it ideal for applications requiring high speed performance.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) 2SC2814-5 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

.15 pF

Maximum Collector-Emitter Voltage:

20 V

Configuration:

Minimum DC Current Gain (hFE):

135

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SC2814-5 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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