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BF199

Onsemi

BF199 by Onsemi

BF199 by Onsemi is a NPN BJT transistor for RF applications. With hFE of 40, it operates at up to 150 °C with fT of 750 MHz. Ideal for amplification in very high frequency bands, it has a max IC of 0.1A and VCE of 25V in a cylindrical package.

Median Price

$0.109

Lifecycle Status

Suppliers In-Stock

31

In-Stock Inventory

1k+

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Elektronika Sales Private Limited

India . 26,400 parts In-Stock

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LWI Electronics Inc

India . 23,540 parts In-Stock

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ES Components

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Vyrian

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Pegasus Components GmbH

Germany . 4,043 parts In-Stock

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Partservice

France . 4,000 parts In-Stock

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$0.129

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Micros sp.j. W. Kędra i J. Lic

Poland . 4,000 parts In-Stock

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Goldney Electronics S.L.

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Digiode

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Lighthouse Electronics, Inc.

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ComSIT Distribution GmbH

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Fibra_Brandt Electronic GMBH

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Anansix

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Manotoh

Italy . 1,627 parts In-Stock

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Sinequanon

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Electronic Expediters

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ECAB

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Manoshevitz Elec. Sales

Israel . 640 parts In-Stock

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Bristol Electronics

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Corel Iberica Componentes, S.L.

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MISTER SPROCKETS

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LittleDiode

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IBS Electronics

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Resion

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Zilex Electronics Inc.

Canada . 250 parts In-Stock

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GES GmbH

Germany . 213 parts In-Stock

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Speed Components Ltd

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ACDS - Activité Composants Distribution Service

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Halfin

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Corohmni

South Africa . 296 parts In-Stock

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Modulus Dynamics

Lithuania . 24,802 parts In-Stock

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$1.669

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$1.602

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$1.535

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Native Components

USA . 2,290 parts In-Stock

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$6.046

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Ampacity Inc.

Singapore . 26,180 parts In-Stock

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$47.050

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Component Stockers USA

USA . 643 parts In-Stock

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$99.990

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Metaverse IC Inc.

Canada . 100,000 parts In-Stock

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Assy Fe

Spain . 30,348 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Kepictronics

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Infinite Electronics LLP (Excess)

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Problanco Electronics

Mexico . 7,062 parts In-Stock

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SupplyDigital Components

Austria . 6,745 parts In-Stock

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Northwest PG Solutions

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Corphita

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UNI Independent Distributors

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Kulean Microsystems

USA . 3,238 parts In-Stock

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Supply Digital

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Alle Elektronik GmbH

Germany . 2,000 parts In-Stock

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TANS Electronics

Latvia . 961 parts In-Stock

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UHIMA Technologies

Türkiye . 448 parts In-Stock

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Perfect Parts

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Glotronic Ltd.

UK . 86 parts In-Stock

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Overview

The Onsemi BF199 is a top-quality RF Small Signal Bipolar Junction Transistor (BJT) that offers exceptional performance in amplifier applications. With a very high frequency band and a maximum power dissipation of 1W, this NPN transistor ensures reliable operation even in demanding environments. Manufactured by Onsemi, a trusted name in the industry, the BF199 delivers superior value and benefits to customers. Its silicon element material and cylindrical package style make it a versatile choice for various electronic projects. Upgrade your amplification needs with the Onsemi BF199 and experience unparalleled performance and quality.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, making it durable and reliable.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifiers and signal processing applications, making this transistor suitable for such purposes.

Configuration: SINGLE

Simplifies circuit design and makes it easier to integrate into amplifier circuits.

No. of Terminals: 3

Allows for easy connectivity in circuits and facilitates efficient signal transmission.

Maximum Power Dissipation Ambient: 1 W

Can handle moderate power levels without overheating, ensuring stable performance in amplifier applications.

Minimum DC Current Gain (hFE): 40

Provides sufficient amplification of input signals, making it ideal for use in amplifier circuits.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, allowing for reliable operation in various environments.

Maximum Collector-Emitter Voltage: 25 V

Suitable for low to moderate voltage applications, such as audio amplifiers and signal processing circuits.

Nominal Transition Frequency (fT): 750 MHz

Capable of amplifying high-frequency signals with minimal distortion, making it suitable for very high frequency band applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) BF199 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

.35 pF

Maximum Collector-Emitter Voltage:

25 V

Configuration:

Minimum DC Current Gain (hFE):

40

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

1 W

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BF199 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-565-0259, 5961015650259, 5961-14-375-8757, 5961143758757, 5961-22-284-4106, 5961222844106, 5961-12-195-7024, 5961121957024, 6515-01-333-8413, 6515013338413

NIIN

015650259, 143758757, 222844106, 121957024, 013338413

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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