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BFP640FESDH6327XTSA1

Infineon Technologies

BFP640FESDH6327XTSA1 by Infineon Technologies

BFP640FESDH6327XTSA1 by Infineon Technologies is a NPN RF BJT transistor with 4.1V VCE, 0.05A IC, and fT of 46GHz. It is used for X Band amplifier applications in automotive electronics, meeting AEC-Q101 standards. This surface-mount device has a small outline package with 4 terminals and silicon germanium carbon element material.

Median Price

$0.356

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 635 parts In-Stock

1+ parts

$0.470

100+ parts

$0.256

1k+ parts

$0.226

10k+ parts

-

635

$0.470

$0.256

$0.226

-

Chip1Stop

Japan . 2,500 parts In-Stock

1+ parts

$1.420

100+ parts

$0.440

1k+ parts

$0.327

10k+ parts

-

2,500

$1.420

$0.440

$0.327

-

Rochester

USA . 76,276 parts In-Stock

1+ parts

-

100+ parts

$0.242

1k+ parts

$0.201

10k+ parts

$0.179

76,276

-

$0.242

$0.201

$0.179

Verical

USA . 76,074 parts In-Stock

1+ parts

-

100+ parts

-

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10k+ parts

$0.224

76,074

-

-

-

$0.224

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 14 parts In-Stock

1+ parts

$0.188

100+ parts

-

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-

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14

$0.188

-

-

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Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$0.279

100+ parts

-

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10

$0.279

-

-

-

Vyrian

USA . 3,785 parts In-Stock

1+ parts

-

100+ parts

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3,785

-

-

-

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NAC Semi

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.260

3,000

-

-

-

$0.260

Cyclops Electronics Ltd

UK . 1,179 parts In-Stock

1+ parts

-

100+ parts

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1,179

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-

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VNN

France . 75 parts In-Stock

1+ parts

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75

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Distributors (Availability)

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Ampacity Inc.

Singapore . 48,403 parts In-Stock

1+ parts

$0.168

100+ parts

-

1k+ parts

-

10k+ parts

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48,403

$0.168

-

-

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Semicontronic

India . 47,620 parts In-Stock

1+ parts

$0.168

100+ parts

$0.164

1k+ parts

$0.163

10k+ parts

-

47,620

$0.168

$0.164

$0.163

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Corphita

USA . 146 parts In-Stock

1+ parts

$0.178

100+ parts

-

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146

$0.178

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-

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Continental Prestige Electronics

USA . 3,323 parts In-Stock

1+ parts

$0.279

100+ parts

-

1k+ parts

-

10k+ parts

$0.273

3,323

$0.279

-

-

$0.273

Argo Parts USA

USA . 1,637 parts In-Stock

1+ parts

$0.279

100+ parts

-

1k+ parts

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10k+ parts

$0.270

1,637

$0.279

-

-

$0.270

Aztec Data Supply Inc.

USA . 2,335 parts In-Stock

1+ parts

$0.869

100+ parts

-

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2,335

$0.869

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-

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Corohmni

South Africa . 665 parts In-Stock

1+ parts

$1.293

100+ parts

-

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665

$1.293

-

-

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Modulus Dynamics

Lithuania . 14,262 parts In-Stock

1+ parts

$1.457

100+ parts

$1.399

1k+ parts

$1.340

10k+ parts

-

14,262

$1.457

$1.399

$1.340

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Epart123

USA . 30,000 parts In-Stock

1+ parts

-

100+ parts

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10k+ parts

$0.480

30,000

-

-

-

$0.480

Perfect Parts

USA . 6,720 parts In-Stock

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6,720

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

1+ parts

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5,000

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QUARKTWIN TECHNOLOGY LTD

USA . 3,717 parts In-Stock

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3,717

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GreenTree Electronics

Israel . 2,500 parts In-Stock

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2,500

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Microchip USA

USA . 2,393 parts In-Stock

1+ parts

-

100+ parts

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2,393

-

-

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Overview

Experience unparalleled performance and reliability with the BFP640FESDH6327XTSA1 by Infineon Technologies, a leading manufacturer in RF Small Signal Bipolar Junction Transistors. Ideal for amplifier applications in the X band, this NPN transistor offers exceptional quality and value. With its advanced technology and durable construction, this transistor provides customers with superior signal amplification and enhanced efficiency. Trust Infineon Technologies to deliver cutting-edge solutions for all your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Lightweight and durable material, makes the transistor easy to handle and transport.

Polarity or Channel Type: NPN

Commonly used for amplification and signal processing, versatile for various applications.

Configuration: SINGLE

Simplifies circuit design and integration, suitable for single transistor applications.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, achieving high performance in amplifying signals.

Surface Mount: YES

Ease of installation and soldering on PCBs, suitable for automated assembly processes.

Terminal Form: FLAT

Provides stable connection and contact with other components, ensuring reliability in functioning.

Highest Frequency Band: X BAND

Ideal for high-frequency applications in the X band range, delivering efficient signal amplification.

No. of Terminals: 4

Sufficient number of terminals for connections in a circuit, accommodating various signal paths.

Package Style (Meter): SMALL OUTLINE

Compact size for space-constrained designs, suitable for small form factor applications.

Maximum Collector-Emitter Voltage: 4.1 V

Suitable for low power applications requiring a limited collector-emitter voltage range.

Transistor Element Material: SILICON GERMANIUM CARBON

Combination of materials offering high performance and reliability in signal processing applications.

Maximum Collector Current (IC): 0.05 A

Adequate collector current rating for low power amplification tasks, ensuring stable operation.

Terminal Finish: TIN

Provides corrosion resistance and good conductivity, maintaining proper electrical connections over time.

Terminal Position: DUAL

Facilitates easy mounting and soldering, ensuring secure attachment to the circuit board.

Reference Standard: AEC-Q101

Compliant with automotive quality standards, suitable for automotive electronics applications.

Nominal Transition Frequency (fT): 46000 MHz

High transition frequency for efficient signal amplification at higher frequencies, ideal for RF applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) BFP640FESDH6327XTSA1 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Infineon Technologies

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

4.1 V

Configuration:

Highest Frequency Band:

X BAND

JESD-30 Code:

R-PDSO-F4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON GERMANIUM CARBON

Nominal Transition Frequency (fT):

Trade Compliance

BFP640FESDH6327XTSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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