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MMBTH24LT3

Onsemi

MMBTH24LT3 by Onsemi

MMBTH24LT3 by Onsemi is a NPN RF BJT with 30V VCEO, 0.05A IC, and 620MHz fT. Ideal for high-frequency applications in small outline packages due to its very high frequency band capabilities. Suitable for surface mount designs requiring low collector-base capacitance.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,214 parts In-Stock

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Digiode

USA . 425 parts In-Stock

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425

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TANS Electronics

Latvia . 4,444 parts In-Stock

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Kulean Microsystems

USA . 3,086 parts In-Stock

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SupplyDigital Components

Austria . 1,201 parts In-Stock

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UHIMA Technologies

Türkiye . 878 parts In-Stock

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Problanco Electronics

Mexico . 513 parts In-Stock

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Corohmni

South Africa . 432 parts In-Stock

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Corphita

USA . 80 parts In-Stock

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Overview

Upgrade your electronic projects with the MMBTH24LT3 by Onsemi, a top-tier manufacturer known for producing high-quality RF Small Signal Bipolar Junction Transistors (BJTs). This NPN transistor offers single configuration and very high frequency band capabilities, making it ideal for a wide range of applications. With its small outline package style and tin-lead terminal finish, this transistor provides exceptional performance and reliability. Trust Onsemi to deliver cutting-edge technology that meets your needs and exceeds your expectations. Elevate your designs with the MMBTH24LT3 today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body provides a durable and lightweight housing for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: NPN

NPN type transistors are commonly used in amplification and switching circuits, offering good performance and versatility.

Configuration: SINGLE

The single configuration simplifies circuit design and integration, making it easier to work with in various electronic applications.

Surface Mount: YES

Being surface mountable allows for easy and efficient PCB assembly, saving space and reducing overall production costs.

Package Shape: RECTANGULAR

The rectangular package shape is standard and widely recognized, making it compatible with a range of PCB layouts and designs.

Terminal Form: GULL WING

The gull wing terminal form provides secure and reliable connections during soldering, ensuring proper functionality and performance.

Maximum Collector-Emitter Voltage: 30 V

The high maximum collector-emitter voltage rating allows for safe operation in circuits with higher voltage requirements.

Nominal Transition Frequency (fT): 620 MHz

The high nominal transition frequency indicates fast switching speeds and high-frequency performance, making it suitable for high-speed applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) MMBTH24LT3 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

.45 pF

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MMBTH24LT3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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