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MSC81402

STMicroelectronics

MSC81402 by STMicroelectronics

STMicroelectronics' MSC81402 is an NPN BJT transistor with a max power dissipation of 6W. Ideal for L Band applications, it has a min hFE of 30 and max IC of 0.23A. The package style is flange mount with a ceramic-metal sealed co-fired body material.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,156 parts In-Stock

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Anansix

USA . 2,311 parts In-Stock

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2,311

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Digiode

USA . 406 parts In-Stock

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406

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 230 parts In-Stock

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$1.233

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$1.110

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230

$1.233

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$1.110

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MKK Technologies

India . 1,841 parts In-Stock

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$2.318

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1,841

$2.318

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DigiPath Technology Company

USA . 1,841 parts In-Stock

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$2.318

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1,841

$2.318

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Parana Technologies

USA . 1,858 parts In-Stock

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$1.474

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1,858

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$1.474

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Corphita

USA . 237 parts In-Stock

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Overview

Upgrade your amplifier with the MSC81402 from STMicroelectronics. This top-quality RF Small Signal Bipolar Junction Transistor offers unparalleled performance and reliability in a compact package. Ideal for L Band applications, this NPN transistor delivers a minimum DC current gain of 30 and can handle a maximum power dissipation of 6W. With its ceramic, metal-sealed cofired body material and flange mount package style, the MSC81402 is designed to exceed expectations. Trust STMicroelectronics for cutting-edge technology that amplifies your success.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

Ceramic and metal-sealed co-fired package body material provides excellent thermal conductivity and durability, ensuring reliable performance in various operating conditions.

Polarity or Channel Type: NPN

NPN polarity or channel type allows for easy integration into existing NPN-based circuit designs, making it versatile and compatible with a wide range of applications.

Configuration: SINGLE

Single configuration simplifies circuit design and reduces complexity, making it easier to implement in various amplifier applications.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in amplifying signals with low distortion and noise.

Package Shape: ROUND

Round package shape provides uniform distribution of stress and allows for efficient heat dissipation, contributing to the overall reliability of the transistor.

Terminal Form: FLAT

Flat terminal form ensures secure and stable connections, reducing the risk of signal loss or discontinuity during operation.

No. of Terminals: 2

With only 2 terminals, the transistor is easy to integrate and solder onto PCBs, simplifying the overall assembly process.

Maximum Power Dissipation (Abs): 6 W

High maximum power dissipation of 6W allows the transistor to handle high power levels without overheating, ensuring reliable operation under demanding conditions.

Package Style (Meter): FLANGE MOUNT

Flange mount package style provides secure mounting and mechanical stability, making it ideal for applications where vibration and mechanical stress are a concern.

Minimum DC Current Gain (hFE): 30

Minimum DC current gain of 30 ensures consistent and reliable amplification of signals, maintaining signal integrity and fidelity in amplifier circuits.

Maximum Operating Temperature: 200 °C

High maximum operating temperature of 200 °C allows the transistor to function effectively in elevated temperature environments without performance degradation.

Transistor Element Material: SILICON

Silicon transistor element material offers high reliability, low leakage current, and excellent temperature stability, ensuring long-term performance and durability.

Maximum Collector Current (IC): 0.23 A

Maximum collector current of 0.23A allows for efficient handling of current flow, making the transistor suitable for medium-power amplifier applications.

Terminal Position: RADIAL

Radial terminal position enables easy and flexible installation on circuit boards, offering enhanced design flexibility and ease of integration in various applications.

Case Connection: BASE

Base case connection simplifies the electrical connections and ensures proper grounding, reducing interference and signal distortion in amplifier circuits.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) MSC81402 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

BASE

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

30

Highest Frequency Band:

L BAND

JESD-30 Code:

O-CRFM-F2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

6 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

FLAT

Terminal Position:

RADIAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

MSC81402 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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