Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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STMicroelectronics' MSC81402 is an NPN BJT transistor with a max power dissipation of 6W. Ideal for L Band applications, it has a min hFE of 30 and max IC of 0.23A. The package style is flange mount with a ceramic-metal sealed co-fired body material.
Median Price
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3
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Vyrian
1+ parts
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Anansix
Digiode
IDEA Electronic Components Group
$1.233
$1.110
MKK Technologies
$2.318
DigiPath Technology Company
Parana Technologies
$1.474
Corphita
Ceramic and metal-sealed co-fired package body material provides excellent thermal conductivity and durability, ensuring reliable performance in various operating conditions.
NPN polarity or channel type allows for easy integration into existing NPN-based circuit designs, making it versatile and compatible with a wide range of applications.
Single configuration simplifies circuit design and reduces complexity, making it easier to implement in various amplifier applications.
Specifically designed for amplifier applications, ensuring optimal performance in amplifying signals with low distortion and noise.
Round package shape provides uniform distribution of stress and allows for efficient heat dissipation, contributing to the overall reliability of the transistor.
Flat terminal form ensures secure and stable connections, reducing the risk of signal loss or discontinuity during operation.
With only 2 terminals, the transistor is easy to integrate and solder onto PCBs, simplifying the overall assembly process.
High maximum power dissipation of 6W allows the transistor to handle high power levels without overheating, ensuring reliable operation under demanding conditions.
Flange mount package style provides secure mounting and mechanical stability, making it ideal for applications where vibration and mechanical stress are a concern.
Minimum DC current gain of 30 ensures consistent and reliable amplification of signals, maintaining signal integrity and fidelity in amplifier circuits.
High maximum operating temperature of 200 °C allows the transistor to function effectively in elevated temperature environments without performance degradation.
Silicon transistor element material offers high reliability, low leakage current, and excellent temperature stability, ensuring long-term performance and durability.
Maximum collector current of 0.23A allows for efficient handling of current flow, making the transistor suitable for medium-power amplifier applications.
Radial terminal position enables easy and flexible installation on circuit boards, offering enhanced design flexibility and ease of integration in various applications.
Base case connection simplifies the electrical connections and ensures proper grounding, reducing interference and signal distortion in amplifier circuits.
RF Small Signal Bipolar Junction Transistors (BJT) MSC81402 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from STMicroelectronics
Case Connection:
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MSC81402 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.
President, CEO
Jean-Marc Chery
President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience
Lorenzo Grandi
President, Sales & Marketing
Jerome Roux
Castelletto
Fabrication
Fab Initiation
1968
Italy
Wafer Capacity
SGFAB AMK 6
2000
Singapore
29,000
AG200
Agrate Brianza
14,000
RST 8
France
Rousset
35,000
Crolles 1
1993
Crolles
30,000
Crolles 2-ext. mod 5
Crolles 2-ext. mod 2
2022
Crolles 2-ext. mod 3
2023
Crolles 2
2004
28,000
1985
SiC Fab
2006
Sweden
Norrköping
10,000
Fab 3
2005
Tours
2,000
Fab 1 & Fab 2
1978
55,000
Fab 2
1997
Catania
SGFAB-AMK 6E
2003
145,000
SGFAB-AMJ 9
1984
152,000
AG300 (R3)
1980
25,000
1987
34,000
AG300
2024
Crolles 2-ext. mod 1
2020
Fab 1 6-inch fab
2013
11,000
SiC 6-inch line
2021
2,500
200mm GaN
2018
SGFAB-AMK 8
2001
Crolles 2- JV Fab
SGFAB-AMK 6
2016
38,125
SGFAB-AMK 2E
2010
20,000
Silicon Carbide A.B.
SiC wafer/EPI Fab
SiC Device Fab
2025
2N7002
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Transistor Element Material: SILICON; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
1N4148
First Components International
RECTIFIER DIODE; Surface Mount: NO; No. of Phases: 1; Maximum Operating Temperature: 200 Cel; Config: SINGLE; No. of Elements: 1;
Weitron Technology
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Terminal Finish: TIN LEAD; Maximum Operating Temperature: 150 Cel;
EU2B-YS2J03F
Idec
ROTARY SWITCH;
SMBJ18CA
Vishay Intertechnology
Vishay Intertechnology's SMBJ18CA is a bidirectional TRANS VOLTAGE SUPPRESSOR DIODE with a max clamping voltage of 29.2 V and a breakdown voltage of 21.05 V. It is surface mountable and commonly used in transient suppression applications.
Central Semiconductor
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
Diodes Incorporated
Nte Electronics
Meritek Electronics
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BAV99
Lite-on Technology
RECTIFIER DIODE; Surface Mount: YES; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 175 Cel; Maximum Output Current: .1 A; Maximum Reverse Recovery Time: .006 us;
Diotec Semiconductor Ag
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
Continental Device India
LM358ADR
Texas Instruments
LM358ADR by Texas Instruments is an operational amplifier with 2 functions, featuring a max input offset voltage of 5000 uV and nominal voltage of 5V. Widely used in applications requiring high voltage gain, it operates within a temperature range of 0-70°C and offers frequency compensation for stability.
Jiangsu Jiejie Microelectronics
1N4148WT
Yangzhou Yangjie Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LM358AN
LM358AN by Texas Instruments is an Operational Amplifier with 2 functions. It has a Max Input Offset Voltage of 5000 uV and Nominal Common Mode Reject Ratio of 85 dB. Widely used in voltage-feedback applications due to its high Min Voltage Gain of 15000 and Unity Gain Bandwidth of 1000 kHz.
EEAGA1H4R7
Panasonic
Panasonic EEAGA1H4R7 is a 4.7uF, 50V Aluminum Electrolytic Capacitor with 0.1 Tan Delta and 0.003mA Leakage Current. Ideal for applications requiring high ripple current handling in temperatures ranging from -55 to 105°C.
Daco Semiconductor
2N7002,215
Nexperia
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): 30; Transistor Application: SWITCHING; Package Body Material: PLASTIC/EPOXY;
SS14
Zowie Technology
RECTIFIER DIODE; Surface Mount: YES; No. of Phases: 1; Maximum Operating Temperature: 125 Cel; No. of Elements: 1; Maximum Non Repetitive Peak Forward Current: 30 A;
SS9018GBU
Fairchild Semiconductor
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1100 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .05 A;
BFR92A
NXP Semiconductors
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .025 A;
BFS17
ROHM
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 1000 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .05 A;
CA3083Z
Intersil
NPN; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: NO; Nominal Transition Frequency (fT): 450 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .1 A;
NSVMMBTH81LT1G
Onsemi
NSVMMBTH81LT1G by Onsemi is a PNP BJT transistor for amplifier applications. It operates in the very high-frequency band with a max fT of 600 MHz. With a VCEsat of 0.5V and hFE of 60, it offers efficient performance in small outline packages.
BFR99A
STMicroelectronics
BFR99A by STMicroelectronics is a PNP RF small signal BJT designed for amplifier applications. It features a max power dissipation of 0.36 W, operates at frequencies up to 2300 MHz, and withstands temperatures up to 200 °C. Its cylindrical metal package ensures durability in ultra-high frequency environments.
MPS918RLRA
MPS918RLRA by Onsemi is an NPN RF BJT with 3 terminals, operating at a max temp of 150 °C. It has a fT of 600 MHz and Vce(max) of 15V, making it suitable for ultra-high frequency amplifier applications. Packaged in plastic/epoxy, it features a collector-base capacitance of 3pF and collector current up to 0.05A.
SD1012-3
NPN; Surface Mount: NO; JESD-609 Code: e0; Terminal Finish: Tin/Lead (Sn/Pb); Transistor Element Material: SILICON;
NE662M04-T2-A
Nec Electronics
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 25000 MHz; Maximum Collector Current (IC): .035 A; Transistor Element Material: SILICON;
BFR93A
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 6000 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .09 A;
MPS3640
Semiconductor Technology
PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 500 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .08 A;
2N2369A
Swampscott Electronics
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 500 MHz; Maximum Power Dissipation (Abs): .36 W; Maximum Collector Current (IC): .2 A;
2N3643
Semitronics
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .5 A;
934067693115
RF Small Signal Bipolar Transistors; JESD-609 Code: e3; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 30; Moisture Sensitivity Level (MSL): 1; Terminal Finish: TIN;
PN5179/D26Z
National Semiconductor
PN5179/D26Z by National Semiconductor is an NPN BJT transistor with VCEsat of 0.4V, Gp of 15dB, and fT of 900MHz. Ideal for amplifier applications in the very high-frequency band due to its silicon element material and 12V max collector-emitter voltage. The package is cylindrical with a plastic/epoxy body, through-hole terminals, and a single configuration.
BFR93AE6327HTSA1
BFR93AE6327HTSA1 by Infineon Technologies is a NPN RF BJT with 3 terminals, suitable for amplifier applications. It has a max power dissipation of 0.3W, hFE of 70, and fT of 6000MHz. This transistor operates at up to 150°C and features a collector-emitter voltage of 12V.
MRF911
Motorola
MRF911 by Motorola is a NPN RF BJT transistor for switching applications. With a max. collector-emitter voltage of 12V, it operates in L band with fT of 5000 MHz. This surface-mount device has 4 terminals and a min hFE of 30, making it suitable for high-frequency signal amplification.
CA3086M96
Renesas Electronics
CA3086M96 by Renesas Electronics is a NPN BJT transistor with 6 elements and 14 terminals. It operates in the very high frequency band up to 550 MHz, making it ideal for amplifier applications. This complex transistor has a max collector-emitter voltage of 15V and collector current of 0.05A, suitable for surface mount configurations in small outline packages.
MPS918
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 600 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .05 A;
HFA3127BZ
Integrated Device Technology
NPN; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .037 A; Minimum DC Current Gain (hFE): 40;
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MSC80185
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3200 MHz; Maximum Collector Current (IC): .3 A; Maximum Collector-Base Capacitance: 3 pF;
MSC80186
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3200 MHz; Maximum Collector Current (IC): .5 A; No. of Terminals: 4;
MSC80195
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3200 MHz; Maximum Power Dissipation (Abs): 4.9 W; Maximum Collector Current (IC): .3 A;
MSC80196
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 3200 MHz; Maximum Collector Current (IC): .5 A; Package Style (Meter): FLANGE MOUNT;
MSC81002
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 6.3 W; Maximum Collector Current (IC): .2 A; Terminal Form: FLAT;
MSC81118
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 6.3 W; Maximum Collector Current (IC): .2 A; Package Shape: ROUND;
MSC82001
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 7 W; Maximum Collector Current (IC): .2 A; Transistor Element Material: SILICON;
MSC82040
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1600 MHz; Maximum Collector Current (IC): .2 A; Qualification: Not Qualified;
MSC82100
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1600 MHz; Maximum Collector Current (IC): .2 A; Maximum Collector-Base Capacitance: 3.2 pF;
MSC82302
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .3 A; Terminal Form: FLAT; Package Shape: ROUND;
MSC83301
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 6 W; Maximum Collector Current (IC): .2 A; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
MSC80064
Microsemi
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.44 W; Maximum Collector Current (IC): .1 A; No. of Terminals: 2;
Asi Semiconductor
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .5 A; Qualification: Not Qualified; Case Connection: EMITTER;
Advanced Power Technology
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.44 W; Maximum Collector Current (IC): .1 A; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
MSC80915
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 5 W; Maximum Collector Current (IC): .3 A; Terminal Form: FLAT;
MSC80917
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 7.5 W; Maximum Collector Current (IC): 1 A; No. of Elements: 1;
MSC81035M
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 3 A; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
MSC80914
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 7 W; Maximum Collector Current (IC): .2 A; Terminal Position: RADIAL;
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