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MSC81035M

Asi Semiconductor

MSC81035M by Asi Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 3 A; Package Body Material: CERAMIC, METAL-SEALED COFIRED;

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 3,609 parts In-Stock

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Vyrian

USA . 2,595 parts In-Stock

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Anansix

USA . 2,085 parts In-Stock

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A&K Electronics

USA . 3 parts In-Stock

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Bristol Electronics

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 871 parts In-Stock

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$1.225

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MKK Technologies

India . 2,034 parts In-Stock

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$2.303

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DigiPath Technology Company

USA . 2,034 parts In-Stock

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Corphita

USA . 4,507 parts In-Stock

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Parana Technologies

USA . 2,088 parts In-Stock

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$1.464

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Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) MSC81035M attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Asi Semiconductor

Specs

Maximum Collector Current (IC):

3 A

Configuration:

Minimum DC Current Gain (hFE):

15

Highest Frequency Band:

L BAND

JESD-30 Code:

O-CRFM-F2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

250 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

FLAT

Terminal Position:

RADIAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

MSC81035M Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-082-6228, 5961010826228

NIIN

010826228

Manufacturer Highlights

Asi Semiconductor

ASI Semiconductor, Inc. (ASI) designs, supplies and markets state-of-the-art high power, pulsed RF transistors and pallets. We proudly serve thousands of customers in dozens of countries, specifically focusing on pulsed RF commercial applications for avionics, radar, medical and industrial applications. We are introducing VIMOS technology to meet the needs and requirements of this unique marketplace. We have supported this industry for over 30 years which has included several governments and Fortune 500 customers. ASI was founded in 1979 and is ISO 9001 certified. Our headquarters is located in North Hollywood, CA, USA.

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