Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
BFR360FH6327XTSA1 by Infineon Technologies is a NPN RF BJT transistor with a max fT of 14GHz. It is designed for amplifier applications in the S Band frequency range. This small outline package has a max operating temp of 150°C and collector-emitter voltage of 6V, making it suitable for high-frequency amplification needs.
Median Price
$0.142
Lifecycle Status
Suppliers In-Stock
22
In-Stock Inventory
1k+
Arrow
1+ parts
$0.302
100+ parts
1k+ parts
$0.132
10k+ parts
$0.091
Mouser Electronics
$0.330
$0.161
$0.146
$0.124
Distrelec
$0.505
$0.451
$0.365
-
EBV Elektronik
Avnet
$0.093
Rochester
$0.147
$0.122
$0.109
Verical
$0.136
DigiKey
$0.131
Farnell
$0.117
$0.103
Element14
$0.177
$0.166
Newark
$0.208
$0.190
RS (Exports)
$0.133
$0.099
Chip1Stop
$0.088
Digiode
$0.070
Nova Conductors
$0.135
TME
$0.300
$0.157
$0.125
$0.112
NAC Semi
$0.468
Bristol Electronics
Vyrian
IBS Electronics
$0.134
VNN
Rutronik
$0.123
Ampacity Inc.
$0.043
Corphita
$0.067
Component Stockers USA
$0.080
$0.060
Netroflash
Continental Prestige Electronics
$0.314
$0.126
$0.079
$0.051
Modulus Dynamics
$1.227
$1.178
$1.129
Corohmni
$1.400
Perfect Parts
iBuyXS LLC
Epart123
$0.150
GreenTree Electronics
Argo Parts USA
Authorized Procurement Solutions
This material provides durability and protection for the transistor, making it suitable for various applications.
NPN transistors are commonly used for amplification and switching applications, offering high efficiency and reliability.
Single configuration simplifies circuit design and can lead to cost savings in production.
Designed specifically for amplification purposes, ensuring optimal performance in amplifying signals.
Surface mount capability allows for easy and convenient integration onto circuit boards, saving space and improving efficiency.
The rectangular shape of the package allows for efficient placement and soldering on circuit boards.
Flat terminals provide a secure and stable connection, enhancing the reliability of the transistor.
Suitable for high-frequency applications in the S band, ideal for communication and radar systems.
Having 3 terminals simplifies the connection and control of the transistor in electronic circuits.
Small outline package style saves space and allows for compact designs in electronic devices.
Can operate at high temperatures, making it suitable for industrial and automotive applications.
Low collector-base capacitance minimizes signal distortion and enhances the performance of the transistor in high-frequency circuits.
Sufficient collector-emitter voltage rating for many common electronic applications, ensuring reliability and safety in operation.
Silicon material offers high performance and reliability in semiconductor devices, making it a preferred choice for transistors.
Can handle moderate collector current, suitable for low to medium power amplification requirements.
Tin terminal finish provides good electrical conductivity and solderability, ensuring a reliable connection in circuits.
Dual terminal position offers flexibility in circuit design and connection options, enhancing versatility in applications.
Compliance with the AEC-Q101 standard ensures high reliability and quality for automotive electronic applications.
High transition frequency allows for high-speed signal processing, making this transistor suitable for demanding RF applications.
RF Small Signal Bipolar Junction Transistors (BJT) BFR360FH6327XTSA1 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Infineon Technologies
Additional Features:
Maximum Collector Current (IC):
Maximum Collector-Base Capacitance:
Maximum Collector-Emitter Voltage:
Configuration:
Highest Frequency Band:
JESD-30 Code:
JESD-609 Code:
Moisture Sensitivity Level (MSL):
No. of Elements:
No. of Terminals:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Polarity or Channel Type:
Reference Standard:
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Transistor Application:
Transistor Element Material:
Nominal Transition Frequency (fT):
BFR360FH6327XTSA1 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
PCN Packaging - Recyclable Glass Carrier 14/Oct/2014 Reel Cover Tape Chg 16/Feb/2016
Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.
CEO
Jochen Hanebeck
Chief Financial Officer
Sven Schneider
Chief Marketing Officer
Andreas Urschitz
Villach 300mm
Fabrication
Fab Initiation
2011
Austria
Villach
Wafer Capacity
11,000
Kulim 2
2016
Malaysia
Kulim
79,500
Dresden - Module 3
1999
Germany
Dresden
58,000
Villach Building
2,000
Regensburg
1986
60,000
Dresden 200 - Module 1
1995
28,000
Dresden 200 - Module 2
1996
Building 38
2005
500
Building 47
Kulim 1
2006
110,000
Mesa Facility
1990
USA
Mesa
3,000
Villach 150mm
1981
35,000
Villach 200mm
68,000
Temecula
30,000
2021
2018
5,000
Kulim 3
2024
Fab 25
Austin
31,000
Dresden - Module 4
2026
MC33269T-3.3G
Onsemi
MC33269T-3.3G by Onsemi is a fixed positive single output LDO regulator with a max output current of 0.8 A and a dropout voltage of 1.35 V. It is commonly used in applications that require stable voltage regulation, such as power supplies for electronic devices.
SS14+
Multicomp Pro
SS14+ by Multicomp Pro is a Schottky rectifier diode with a max output current of 1A and a reverse test voltage of 40V. It is designed for surface mount applications in electronic circuits, offering a small outline package style and dual terminal position. With a temperature range from -65°C to 150°C, it is suitable for various industrial and consumer electronics.
SMBJ18CA
Yangzhou Yangjie Electronics
TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Maximum Clamping Voltage: 29.2 V; Nominal Breakdown Voltage: 21.05 V; Maximum Repetitive Peak Reverse Voltage: 18 V; Polarity: BIDIRECTIONAL;
261
Micronetics
Other Interface ICs; Temperature Grade: MILITARY; Terminal Form: FLAT; No. of Terminals: 14; Package Code: DFP; Package Shape: SQUARE;
M39029/58-360
Glenair
CONNECTOR ACCESSORY; Contact Gender: MALE; Material: COPPER ALLOY; IEC Conformity: NO; MIL-Connector Accessory Name: CONTACT; MIL Conformity: YES;
1N4148
International Semiconductor
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
LL4148
Weitronic Enterprise
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
BAV99
Temic Semiconductors
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
LM107H/883C
Rochester Electronics
OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Package Equivalence Code: CAN8,.2;
1N4148WT
Tak Cheong Electronics Holdings
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
2902037
Phoenix Contact
MODULAR TERMINAL BLOCK;
MBRS3200T3G
MBRS3200T3G by Onsemi is a Schottky rectifier diode with a max output current of 3A and a max forward voltage of 0.59V. It operates in temperatures ranging from -65°C to 175°C, making it suitable for power applications. The diode has a peak repetitive reverse voltage of 200V and is designed for surface mount installation in electronic circuits.
BAT54SLT1G
BAT54SLT1G by Onsemi is a fast recovery Schottky diode with 2 elements in series connected configuration. It has a max reverse recovery time of 0.005 us and a max forward voltage of 0.8 V. Ideal for applications requiring high-speed rectification, it operates b/w -55 to 150 °C and can handle a max output current of 0.2 A.
LM107H
OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Code: TO-99; Package Shape: ROUND;
Protek Devices
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Transys Electronics
1N4148WS
Promax-johnton
Daco Semiconductor
LL4148-GS08
Telefunken Microelectronics
RECTIFIER DIODE; Surface Mount: YES; JESD-609 Code: e0; No. of Elements: 1; Maximum Operating Temperature: 175 Cel; Maximum Non Repetitive Peak Forward Current: 2 A;
LM358AN
Signetics
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
BFS17W
Vishay Semiconductors
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 2400 MHz; Maximum Collector Current (IC): .025 A; Terminal Position: DUAL;
2N5109
Baneasa S A
RF Small Signal Bipolar Transistors; Surface Mount: NO; JESD-30 Code: O-MBCY-W3; JEDEC-95 Code: TO-39; Package Style (Meter): CYLINDRICAL; Package Shape: ROUND;
CA3083M96
Harris Semiconductor
NPN; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 450 MHz; Maximum Collector Current (IC): .1 A; JESD-30 Code: R-PDSO-G16;
FH102A-TR-E
FH102A-TR-E by Onsemi is an NPN RF BJT with 0.5W power dissipation, 90 min hFE, and 5000MHz fT. Ideal for high-frequency applications in electronics, it operates up to 150 °C with a collector current of 0.07A in surface-mount designs.
BFP840FESDH6327XTSA1
Infineon Technologies
BFP840FESDH6327XTSA1 by Infineon Technologies is a NPN RF BJT transistor with max. collector-emitter voltage of 2.25V and max. collector current of 0.035A, ideal for amplifier applications in KA band frequencies up to 85GHz. This surface-mount transistor has a small outline package with 4 terminals and uses silicon germanium carbon as the element material.
BFR193WH6327XTSA1
BFR193WH6327XTSA1 by Infineon is a NPN RF BJT transistor with 12V VCE, 8000MHz fT, and 0.08A IC. Ideal for L Band applications like amplifiers due to its high transition frequency and low collector-base capacitance. Features Gull Wing terminals in a small outline package for surface mount assembly.
BFR193E6327HTSA1
BFR193E6327HTSA1 by Infineon Technologies is an NPN RF BJT transistor with a max operating temperature of 150°C. It has a min DC current gain of 70 and operates in the ultra-high frequency band up to 8000 MHz. This transistor is commonly used as an amplifier in applications requiring high-frequency signal amplification.
MMPQ2369G
MMPQ2369G by Onsemi is a NPN BJT with 4 elements, ideal for amplifier applications. It has a max collector-emitter voltage of 15V, fT of 550MHz, and IC of 0.5A. The transistor is surface mountable with a small outline package and Gull Wing terminals.
CA3086M96
Renesas Electronics
CA3086M96 by Renesas Electronics is a NPN BJT transistor with 6 elements and 14 terminals. It operates in the very high frequency band up to 550 MHz, making it ideal for amplifier applications. This complex transistor has a max collector-emitter voltage of 15V and collector current of 0.05A, suitable for surface mount configurations in small outline packages.
934059125115
NXP Semiconductors
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 25000 MHz; Maximum Collector Current (IC): .03 A; Transistor Application: SWITCHING;
BFQ256-T
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 1300 MHz; Maximum Collector Current (IC): .3 A; Terminal Position: SINGLE;
MMBTH10LT1
Shandong Yiguang Electronic Joint Stock
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 650 MHz; Package Shape: RECTANGULAR; No. of Terminals: 3;
2N2222
Thomson-csf Semiconductors
NPN; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; Package Shape: ROUND; Maximum Collector-Emitter Voltage: 30 V;
BFR92AW,115
NXP Semiconductors' BFR92AW,115 is an NPN RF BJT with a max fT of 5000 MHz. It has a max power dissipation of 0.3 W and operates in the ultra-high frequency band. Ideal for amplifier applications, this transistor comes in a small outline package with gull wing terminals for surface mount assembly.
BFX48
STMicroelectronics
PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 550 MHz; Maximum Power Dissipation (Abs): .36 W; Maximum Collector Current (IC): .1 A;
BFQ256A-T
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 1200 MHz; Maximum Collector Current (IC): .3 A; Additional Features: HIGH RELIABILITY;
BFR93A
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 6000 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .09 A;
HFA3096BZ96
HFA3096BZ96 by Renesas Electronics is a RF BJT with NPN and PNP channels, 5 elements, and 8000 MHz fT. It's used for amplification in the UHF band, has 16 terminals, and is surface mountable. The package is small outline with gull wing terminals made of silicon material.
AT-42035G
Broadcom
AT-42035G by Broadcom is a NPN RF BJT transistor with a max operating temperature of 150°C. It has a transition frequency of 8 GHz and can handle a collector current of 0.08 A, making it suitable for C band amplifier applications in microwave packages.
55GN01MA-TL-E
The Onsemi 55GN01MA-TL-E is an NPN RF BJT with a single configuration, suitable for surface mount applications. It offers a max power dissipation of 0.4W, min DC current gain of 100, and nominal transition frequency of 3000MHz. Ideal for high-frequency amplification in electronic circuits.
Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.
BFR380L3E6327XTMA1
RF Small Signal Bipolar Transistors; JESD-609 Code: e4; Terminal Finish: GOLD; Moisture Sensitivity Level (MSL): 1;
BFR35APE6327HTSA1
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Collector Current (IC): .045 A; Highest Frequency Band: L BAND;
BFR360L3E6765XTMA1
RF Small Signal Bipolar Transistors; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e4; Terminal Finish: GOLD;
BFR340FH6327XTSA1
The BFR340FH6327XTSA1 by Infineon Technologies is an NPN RF small signal bipolar junction transistor with a maximum collector-emitter voltage of 6V. It has a rectangular package shape and is suitable for amplifier applications in the S band. The transistor has a maximum collector current of 0.02A and a nominal transition frequency of 14,000MHz.
BFR380FH6327XTSA1
RF Small Signal Bipolar Transistors; Terminal Finish: TIN; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e3;
BFR360FH6765XTSA1
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 14000 MHz; Maximum Collector Current (IC): .035 A; Package Style (Meter): SMALL OUTLINE;
BFR360L3E6327XTMA1
RF Small Signal Bipolar Transistors;
BFR35APE6327BTSA1
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Collector Current (IC): .045 A; Maximum Collector-Base Capacitance: .55 pF;
BFR360T
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 14000 MHz; Maximum Collector Current (IC): .035 A; Maximum Operating Temperature: 150 Cel;
BFR380F
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 14000 MHz; Maximum Power Dissipation (Abs): .38 W; Maximum Collector Current (IC): .08 A;
BFR360L3
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 14000 MHz; Maximum Power Dissipation (Abs): .21 W; Maximum Collector Current (IC): .035 A;
BFR35AP
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Power Dissipation (Abs): .28 W; Maximum Collector Current (IC): .045 A;
BFR340F-E6327
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 11000 MHz; Maximum Power Dissipation (Abs): .06 W; Maximum Collector Current (IC): .01 A;
BFR340L3
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 14000 MHz; Maximum Power Dissipation (Abs): .06 W; Maximum Collector Current (IC): .01 A;
BFR360F
BFR340L3E6327XTMA1
RF Small Signal Bipolar Transistors; JESD-609 Code: e4; Moisture Sensitivity Level (MSL): 1; Terminal Finish: GOLD;
BFR360FE6765TR
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 14000 MHz; Maximum Collector Current (IC): .035 A; Maximum Collector-Base Capacitance: .5 pF;
BFR340F
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 14000 MHz; Maximum Power Dissipation (Abs): .06 W; Maximum Collector Current (IC): .02 A;
BFR340FE6327XT
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 14000 MHz; Maximum Collector Current (IC): .02 A; Minimum Operating Temperature: 150 Cel;
Supply Digital Components
$106.00
$54.25
$11.90
$7.29
Quantity
12,000 In-Stock
Total price ≈ $80,197.29
© 2023 All rights reserved