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BSX28

STMicroelectronics

BSX28 by STMicroelectronics

BSX28 by STMicroelectronics is an NPN RF BJT designed for switching applications. It features a max power dissipation of 0.36 W, operates up to 175 °C, and supports a collector current of 0.5 A. Its compact cylindrical package ensures efficient performance in various electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,845 parts In-Stock

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2,845

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Vyrian

USA . 1,436 parts In-Stock

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1,436

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Anansix

USA . 1,225 parts In-Stock

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1,225

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ECAB

Sweden . 330 parts In-Stock

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330

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Manotoh

Italy . 159 parts In-Stock

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159

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Fibra_Brandt Electronic GMBH

Germany . 70 parts In-Stock

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70

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Resion

USA . 59 parts In-Stock

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59

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Huijzer Components

Netherlands . 48 parts In-Stock

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48

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ICP Electronique

France . 25 parts In-Stock

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25

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 752 parts In-Stock

1+ parts

$0.652

100+ parts

-

1k+ parts

$0.587

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752

$0.652

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$0.587

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MKK Technologies

India . 401 parts In-Stock

1+ parts

$1.227

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401

$1.227

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DigiPath Technology Company

USA . 401 parts In-Stock

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$1.227

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401

$1.227

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Native Components

USA . 1,163 parts In-Stock

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$21.705

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1,163

$21.705

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Northwest PG Solutions

USA . 1,686 parts In-Stock

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$23.876

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$21.488

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1,686

$23.876

$21.488

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Corphita

USA . 3,722 parts In-Stock

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3,722

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Parana Technologies

USA . 991 parts In-Stock

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$0.780

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991

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$0.780

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Overview

Unlock unparalleled performance with the BSX28 from STMicroelectronics, a leader in semiconductor innovation. This high-quality NPN transistor excels in switching applications, delivering reliability and efficiency even under demanding conditions. Its robust construction ensures longevity, while its compact design fits effortlessly into your projects. Experience enhanced functionality and superior thermal management, making it the ideal choice for everything from consumer electronics to industrial systems. Elevate your designs with the trusted excellence of STMicroelectronics!

Feature Benefit Bullets

Package Body Material: METAL

The use of metal for the package body enhances thermal performance, improving the transistor’s reliability and durability in high-power applications.

Polarity or Channel Type: NPN

NPN configuration allows for efficient switching and amplification, making it suitable for a variety of applications.

Configuration: SINGLE

Single transistor configuration simplifies circuit design and reduces space requirements on the PCB.

Transistor Application: SWITCHING

Designed for switching applications, this transistor offers fast response times, making it suitable for digital circuits and power management.

Package Shape: ROUND

The round package shape provides efficient use of space and can improve heat dissipation in proper mounting conditions.

Terminal Form: WIRE

Wire terminal form allows for flexible connection options and ease of integration into different circuit types.

No. of Terminals: 3

Three terminals enable simpler circuit integration while providing essential functionality for switching applications.

Maximum Power Dissipation (Abs): 0.36 W

With a maximum power dissipation of 0.36 W, this transistor is suitable for moderate power applications while effectively managing heat.

Package Style (Meter): CYLINDRICAL

The cylindrical package style can improve thermal conductivity and offers easier handling during assembly.

Minimum DC Current Gain (hFE): 50

A minimum DC current gain of 50 ensures good amplification capability, making this transistor a reliable choice for signal processing.

Maximum Operating Temperature: 175 °C

The high maximum operating temperature allows this transistor to be used in rugged and high-temperature environments.

Maximum Collector-Base Capacitance: 4 pF

Low collector-base capacitance enables high-frequency operations and ensures minimal signal distortion.

Maximum Collector-Emitter Voltage: 12 V

With a maximum collector-emitter voltage of 12 V, this transistor is suitable for low-voltage applications.

Transistor Element Material: SILICON

Silicon as the transistor element material offers excellent electrical properties, enhancing performance and reliability.

Maximum Collector Current (IC): 0.5 A

A maximum collector current of 0.5 A allows for substantial current handling, making it suitable for various load types.

Terminal Finish: TIN LEAD

Tin lead terminal finish ensures good solderability, facilitating easier assembly in PCB manufacturing.

Terminal Position: BOTTOM

Bottom terminal positioning often leads to more compact designs and can support better heat dissipation.

Nominal Transition Frequency (fT): 650 MHz

A nominal transition frequency of 650 MHz indicates suitability for high-frequency applications, ensuring reliable performance in RF circuits.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) BSX28 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

4 pF

Maximum Collector-Emitter Voltage:

12 V

Configuration:

Minimum DC Current Gain (hFE):

50

JEDEC-95 Code:

TO-18

JESD-30 Code:

O-MBCY-W3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BSX28 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-295-6491, 5961012956491, 5961-15-053-2269, 5961150532269, 5961-15-068-3473, 5961150683473, 5961-15-058-6551, 5961150586551, 5961-99-118-0299, 5961991180299, 8010-99-225-0931, 8010992250931, 8010-99-805-9961, 8010998059961

NIIN

012956491, 150532269, 150683473, 150586551, 991180299, 992250931, 998059961

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

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