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BFR520T,115

NXP Semiconductors

BFR520T,115 by NXP Semiconductors

BFR520T,115 by NXP Semiconductors is a RF Small Signal Bipolar Junction Transistor (BJT) with NPN polarity. It is a single configuration amplifier transistor that operates in the L Band frequency range up to 9000 MHz. With a max power dissipation of 0.3 W and a max operating temperature of 150°C, it is suitable for various applications requiring high-frequency amplification.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,965 parts In-Stock

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8,965

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VNN

France . 1,866 parts In-Stock

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1,866

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Anansix

USA . 1,857 parts In-Stock

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1,857

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Nova Conductors

Japan . 900 parts In-Stock

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900

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Digiode

USA . 74 parts In-Stock

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74

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 1,675 parts In-Stock

1+ parts

$0.369

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1,675

$0.369

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Corohmni

South Africa . 19 parts In-Stock

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$1.409

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19

$1.409

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AZTECH Wire

Italy . 279 parts In-Stock

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$19.619

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279

$19.619

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Semicontronic

India . 1,451 parts In-Stock

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$42.050

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$40.999

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$40.788

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1,451

$42.050

$40.999

$40.788

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Ampacity Inc.

Singapore . 1,317 parts In-Stock

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$46.050

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1,317

$46.050

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One Stop Electronics

USA . 863 parts In-Stock

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$51.050

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863

$51.050

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Perfect Parts

USA . 5,018 parts In-Stock

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5,018

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Corphita

USA . 4,126 parts In-Stock

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Argo Parts USA

USA . 3,859 parts In-Stock

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3,859

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Continental Prestige Electronics

USA . 3,634 parts In-Stock

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3,634

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UNI Independent Distributors

Spain . 1,411 parts In-Stock

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Microchip USA

USA . 250 parts In-Stock

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250

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Bastille Electronics

Australia . 40 parts In-Stock

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40

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Overview

Experience the power and reliability of the BFR520T,115 by NXP Semiconductors. As a leading manufacturer in the industry, NXP Semiconductors is known for delivering top-quality products that meet the highest standards. The BFR520T,115 is part of their RF Small Signal Bipolar Junction Transistors (BJT) category, offering exceptional performance in amplifier applications. With its compact design and surface mount capability, this transistor provides ease of use and flexibility. The BFR520T,115 operates at the highest frequency band, ensuring accurate signal amplification. Trust NXP Semiconductors to deliver reliable solutions that meet your needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good protection for the transistor and is lightweight, making it suitable for portable electronic devices.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifiers and switching circuits, providing good performance for these applications.

Configuration: SINGLE

Single configuration transistors are easier to use and integrate into circuits, making them a convenient choice for amplifier applications.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in signal amplification tasks.

Surface Mount: YES

Surface mount capability allows for easier and more efficient PCB assembly, saving time and cost in production.

Maximum Power Dissipation (Abs): 0.3 W

With a high maximum power dissipation, this transistor can handle higher power levels without overheating.

Maximum Collector Current (IC): 0.07 A

The high maximum collector current rating allows this transistor to handle relatively high current loads, suitable for many amplifier applications.

Nominal Transition Frequency (fT): 9000 MHz

The high transition frequency indicates excellent high-frequency performance, making this transistor ideal for RF applications up to 9 GHz.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) BFR520T,115 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Additional Features:

HIGH RELIABILITY

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

60

Highest Frequency Band:

L BAND

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BFR520T,115 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.75

SB

8541.21.00.80

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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