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NSVF4020SG4T1G

Onsemi

NSVF4020SG4T1G by Onsemi

NSVF4020SG4T1G by Onsemi is an NPN BJT transistor for amplifier applications in KU band. With a max power dissipation of 0.4W, it offers a min hFE of 60 and fT of 16GHz. This small outline package has 4 terminals, operates b/w -55 to 150°C, and supports up to 8V collector-emitter voltage.

Median Price

$0.297

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 1,970 parts In-Stock

1+ parts

$0.376

100+ parts

$0.191

1k+ parts

$0.166

10k+ parts

-

1,970

$0.376

$0.191

$0.166

-

DigiKey

USA . 1,948 parts In-Stock

1+ parts

$0.490

100+ parts

$0.268

1k+ parts

$0.228

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-

1,948

$0.490

$0.268

$0.228

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Mouser Electronics

USA . 3,595 parts In-Stock

1+ parts

$0.540

100+ parts

$0.338

1k+ parts

$0.242

10k+ parts

-

3,595

$0.540

$0.338

$0.242

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Rochester

USA . 130,003 parts In-Stock

1+ parts

-

100+ parts

$0.254

1k+ parts

$0.211

10k+ parts

$0.188

130,003

-

$0.254

$0.211

$0.188

Verical

USA . 111,000 parts In-Stock

1+ parts

-

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$0.235

111,000

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$0.235

Flip Electronics (Authorized)

USA . 59,460 parts In-Stock

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-

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59,460

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Arrow

USA . 6,000 parts In-Stock

1+ parts

-

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$0.185

6,000

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-

-

$0.185

Future Electronics

Canada . 3,000 parts In-Stock

1+ parts

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100+ parts

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$0.185

3,000

-

-

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$0.185

Element14

Singapore . 1,970 parts In-Stock

1+ parts

-

100+ parts

$0.319

1k+ parts

$0.279

10k+ parts

-

1,970

-

$0.319

$0.279

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Chip1Stop

Japan . 742 parts In-Stock

1+ parts

-

100+ parts

$0.297

1k+ parts

$0.265

10k+ parts

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742

-

$0.297

$0.265

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 156 parts In-Stock

1+ parts

$0.185

100+ parts

-

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156

$0.185

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Digiode

USA . 1,224 parts In-Stock

1+ parts

$0.198

100+ parts

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1,224

$0.198

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Flip Electronics

USA . 41,460 parts In-Stock

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41,460

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Bristol Electronics

USA . 1,050 parts In-Stock

1+ parts

-

100+ parts

$0.317

1k+ parts

$0.156

10k+ parts

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1,050

-

$0.317

$0.156

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Microfarads

USA . 992 parts In-Stock

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992

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Nova Conductors

Japan . 870 parts In-Stock

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870

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Distributors (Availability)

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Ampacity Inc.

Singapore . 21,536 parts In-Stock

1+ parts

$0.157

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21,536

$0.157

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Corohmni

South Africa . 363 parts In-Stock

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$0.185

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363

$0.185

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Corphita

USA . 2,137 parts In-Stock

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$0.187

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2,137

$0.187

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Perfect Parts

USA . 16,744 parts In-Stock

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16,744

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TANS Electronics

Latvia . 7,516 parts In-Stock

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7,516

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Kulean Microsystems

USA . 5,980 parts In-Stock

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5,980

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SupplyDigital Components

Austria . 4,972 parts In-Stock

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4,972

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Problanco Electronics

Mexico . 3,695 parts In-Stock

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3,695

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Continental Prestige Electronics

USA . 2,400 parts In-Stock

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$0.291

1k+ parts

$0.233

10k+ parts

$0.135

2,400

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$0.291

$0.233

$0.135

UHIMA Technologies

Türkiye . 333 parts In-Stock

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333

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Netroflash

USA . 50 parts In-Stock

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50

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Overview

Elevate your RF signal amplification with the NSVF4020SG4T1G by Onsemi. Manufactured with precision and expertise, this NPN transistor offers exceptional performance in amplifier applications within the KU band. With a maximum power dissipation of 0.4W and a minimum DC current gain of 60, this transistor provides reliable and efficient operation in a compact rectangular package. Trust Onsemi for quality components that deliver value, benefits, and advantages to customers seeking superior RF small signal BJT solutions.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides good insulation and durability, making the transistor suitable for a variety of environments.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor a good choice for amplifier applications.

Configuration: SINGLE

Single configuration simplifies circuit design and makes the transistor easy to integrate into a system.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in such circuits.

Surface Mount: YES

Surface mount capability allows for easy and compact placement on circuit boards, saving space and enhancing overall design efficiency.

Highest Frequency Band: KU BAND

KU band frequency range is well-suited for high-frequency applications, making this transistor ideal for use in such systems.

Maximum Power Dissipation (Abs): 0.4 W

With a high power dissipation capability, this transistor can handle power effectively without overheating or damage.

Minimum DC Current Gain (hFE): 60

A high DC current gain ensures efficient amplification and signal processing, making this transistor a reliable choice for amplifier circuits.

Maximum Collector-Emitter Voltage: 8 V

The high collector-emitter voltage rating provides a wide operating range, allowing for flexibility in circuit design.

Nominal Transition Frequency (fT): 16000 MHz

With a high transition frequency, this transistor can effectively amplify signals at high frequencies, making it suitable for a wide range of applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) NSVF4020SG4T1G attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

8 V

Configuration:

Minimum DC Current Gain (hFE):

60

Highest Frequency Band:

KU BAND

JESD-30 Code:

R-PDSO-F4

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

.4 W

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

TIN BISMUTH

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

NSVF4020SG4T1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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