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NSVF6001SB6T1G

Onsemi

NSVF6001SB6T1G by Onsemi

NSVF6001SB6T1G by Onsemi is an NPN BJT transistor with 6 terminals, operating at -55 to 150 °C. It has a max collector-emitter voltage of 12V and fT of 6700 MHz, suitable for ultra-high frequency amplifier applications in AEC-Q101 standard environments.

Median Price

$0.419

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 2,820 parts In-Stock

1+ parts

$0.550

100+ parts

$0.302

1k+ parts

$0.257

10k+ parts

-

2,820

$0.550

$0.302

$0.257

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Mouser Electronics

USA . 2,987 parts In-Stock

1+ parts

$0.640

100+ parts

$0.373

1k+ parts

$0.286

10k+ parts

$0.256

2,987

$0.640

$0.373

$0.286

$0.256

Rochester

USA . 2,730 parts In-Stock

1+ parts

-

100+ parts

$0.288

1k+ parts

$0.239

10k+ parts

$0.213

2,730

-

$0.288

$0.239

$0.213

Verical

USA . 2,730 parts In-Stock

1+ parts

-

100+ parts

-

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$0.266

2,730

-

-

-

$0.266

Distributors (In-Stock)

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Digiode

USA . 594 parts In-Stock

1+ parts

$0.224

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-

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594

$0.224

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Vyrian

USA . 1,300 parts In-Stock

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$0.236

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1,300

$0.236

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Flip Electronics

USA . 54,000 parts In-Stock

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54,000

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Distributors (Availability)

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Corphita

USA . 1,707 parts In-Stock

1+ parts

$0.212

100+ parts

-

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1,707

$0.212

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Corohmni

South Africa . 99 parts In-Stock

1+ parts

$0.236

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99

$0.236

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Continental Prestige Electronics

USA . 9,000 parts In-Stock

1+ parts

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$0.280

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9,000

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$0.280

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Problanco Electronics

Mexico . 5,611 parts In-Stock

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5,611

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Kulean Microsystems

USA . 3,630 parts In-Stock

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3,630

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TANS Electronics

Latvia . 1,176 parts In-Stock

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1,176

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SupplyDigital Components

Austria . 669 parts In-Stock

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669

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UHIMA Technologies

Türkiye . 235 parts In-Stock

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Overview

Enhance your amplifier designs with the NSVF6001SB6T1G from Onsemi. Crafted with precision and quality in mind, this RF Small Signal BJT offers unparalleled performance in the ultra-high frequency band. With a maximum collector-emitter voltage of 12V and a minimum DC current gain of 70, this transistor is perfect for applications requiring reliability and efficiency. Whether you're working on telecommunications, aerospace, or industrial projects, this NPN transistor in a small outline package delivers exceptional value and functionality. Upgrade your circuits today with the NSVF6001SB6T1G and experience the difference Onsemi brings to the table.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good protection for the internal components and ensures durability.

Polarity or Channel Type: NPN

Common type used in amplifiers, making it versatile for different applications.

Configuration: SINGLE

Simplifies circuit design and makes it easy to integrate into systems.

Transistor Application: AMPLIFIER

Specifically designed for amplification applications, ensuring optimal performance.

Surface Mount: YES

Allows for easy and efficient PCB mounting, saving space and reducing assembly time.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Suitable for high-frequency applications, providing reliable signal amplification.

No. of Terminals: 6

Offers flexibility in circuit connections and allows for various circuit configurations.

Maximum Power Dissipation (Abs): 0.8 W

Handles power efficiently, preventing overheating and ensuring reliability.

Transistor Element Material: SILICON

Provides stable and consistent performance over a wide range of operating conditions.

Maximum Collector-Emitter Voltage: 12 V

Suitable for low voltage applications, ensuring safe operation within specified limits.

Minimum Operating Temperature: -55 °C

Can operate in extreme cold conditions, making it suitable for a variety of environments.

Maximum Collector Current (IC): 0.1 A

Handles current flow efficiently, ensuring stable and reliable operation.

Terminal Finish: TIN BISMUTH

Provides good electrical conductivity and solderability for secure connections.

Nominal Transition Frequency (fT): 6700 MHz

High frequency capability ensures fast signal processing and response times.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) NSVF6001SB6T1G attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

1.5 pF

Maximum Collector-Emitter Voltage:

12 V

Configuration:

Minimum DC Current Gain (hFE):

70

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

TIN BISMUTH

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

NSVF6001SB6T1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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