Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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The NXP Semiconductors BFU590GX is a RF Small Signal BJT transistor with NPN polarity. It has a max operating temperature of 150°C and can handle a max collector-emitter voltage of 12V. This transistor is commonly used in amplifiers for L Band applications.
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The plastic/epoxy material used for the package body provides durability and reliability, making it suitable for various applications.
The NPN polarity allows for easy integration in circuits and provides good performance in amplifier applications.
The single configuration simplifies circuit design and enhances ease of use.
Designed specifically for amplifier applications, ensuring optimal performance in signal amplification.
Surface mount capability enables easy installation and saves space on the PCB.
The rectangular shape provides a compact footprint, ideal for space-constrained applications.
The high maximum power dissipation allows for reliable operation under demanding conditions.
The minimum DC current gain of 60 ensures stable and consistent performance in amplification.
The high maximum collector-emitter voltage of 12V allows for a wide range of voltage applications.
The high nominal transition frequency of 8500 MHz indicates high-speed performance, suitable for high-frequency applications.
RF Small Signal Bipolar Junction Transistors (BJT) BFU590GX attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors
Case Connection:
Maximum Collector Current (IC):
Maximum Collector-Base Capacitance:
Maximum Collector-Emitter Voltage:
Configuration:
Minimum DC Current Gain (hFE):
Highest Frequency Band:
JESD-30 Code:
Moisture Sensitivity Level (MSL):
No. of Elements:
No. of Terminals:
Maximum Operating Temperature:
Minimum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Reference Standard:
Surface Mount:
Terminal Form:
Terminal Position:
Transistor Application:
Transistor Element Material:
Nominal Transition Frequency (fT):
BFU590GX Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
HTS
8541.29.00
PCN Assembly/Origin - MFG Name Change Nexperia 5/Mar/2017
PCN Packaging - All Dev Label Update 15/Dec/2020
NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.
Executive Director, President, CEO
Kurt Sievers
Executive VP, CFO
Bill Betz
Executive VP, Chief Sales Officer
Ron Martino
ICN8
Fabrication
Fab Initiation
1996
Netherlands
Nijmegen
Wafer Capacity
55,000
ATMC (Austin Tech & Mfg Center)
1995
USA
Austin
30,000
N/A
1989
Germany
Boeblingen
CHD
1993
Chandler
OHTC
1991
24,000
New Expansion Fab
2026
ECHO
2020
10,000
1N4148WT
Yangzhou Yangjie Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
ULN2803A
Vishay Intertechnology
NPN; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Package Body Material: PLASTIC/EPOXY; JESD-30 Code: R-PDIP-T18;
NDT2955
Onsemi
NDT2955 by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 15A and EAS of 174mJ, suitable for ENHANCEMENT MODE operation. With a compact SMALL OUTLINE package and -55 to 150 °C operating range, it offers efficient power dissipation up to 3W.
M24308/2-1F
Amphenol
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Body or Shell Style: RECEPTACLE; Body Length: 1.228 inch; No. of Rows Loaded: 2;
2N7002
Promax-johnton
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: GULL WING; Maximum Drain-Source On Resistance: 7.5 ohm; Minimum DS Breakdown Voltage: 60 V;
SMBJ18CA
Mde Semiconductor
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Diodes Incorporated
1N4148WS
Changzhou Starsea Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LL4148
Daco Semiconductor
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
National Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Package Style (Meter): SMALL OUTLINE; Terminal Position: DUAL;
1N4148
Unitrode
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
2N2222A
Texas Instruments
2N2222A by Texas Instruments is a small signal NPN bipolar junction transistor (BJT) with a max collector-emitter voltage of 40V and a max collector current of 0.8A. It is commonly used for switching applications due to its fast turn on/off times (35ns/285ns) and high transition frequency (300MHz).
Bel Fuse
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Dielectric Withstanding Voltage (V): 1750VAC; No. of Connectors: ONE; Mixed Contacts: NO;
Semitron
PIC18F4550T-I/PT
Microchip Technology
The Microchip Technology PIC18F4550T-I/PT microcontroller operates at a max clock frequency of 48 MHz with 8-bit architecture. It features 13-Ch 10-Bit ADC channels and USB connectivity, making it suitable for industrial applications requiring high-speed data processing and analog-to-digital conversion. With low power mode and flash ROM programmability, this device offers efficient performance in compact designs.
Secos
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .6 A; JEDEC-95 Code: TO-92;
Semicoa
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
Diotec Semiconductor Ag
Hitano Enterprise
NE555D
Fairchild Semiconductor
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;
SS9018H
SS9018H by Onsemi is an NPN BJT transistor for RF applications. It has a max VCEsat of 0.5V, hFE of 97, and fT of 1100MHz. Ideal for amplifier circuits in L Band frequencies with a max operating temp of 150 °C.
BFP840FESDH6327XTSA1
Infineon Technologies
BFP840FESDH6327XTSA1 by Infineon Technologies is a NPN RF BJT transistor with max. collector-emitter voltage of 2.25V and max. collector current of 0.035A, ideal for amplifier applications in KA band frequencies up to 85GHz. This surface-mount transistor has a small outline package with 4 terminals and uses silicon germanium carbon as the element material.
2SC5488A-TL-H
Onsemi's 2SC5488A-TL-H is an NPN RF BJT with hFE of 90, fT of 5000 MHz, and IC of 0.07 A. Ideal for high-frequency applications in surface-mount configurations due to its low power dissipation and high operating temperature capability up to 150 °C.
MPS5179
MPS5179 by Onsemi is a NPN RF BJT transistor with 3 terminals, ideal for amplifier applications in the VHF band. It has a max power dissipation of 0.2W, hFE of 25, and operates up to 150 °C. The package is cylindrical with through-hole terminals and collector-emitter voltage of 12V.
BFT92W
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .025 A;
MPS5179ZL1
MPS5179ZL1 by Onsemi is an NPN RF BJT with a max collector-emitter voltage of 12V and fT of 900MHz. Ideal for amplifier applications, it has a max collector current of 0.05A and a package style of cylindrical PLASTIC/EPOXY.
BFQ256
NXP Semiconductors
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 1300 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): .3 A;
BFT93W,115
The NXP BFT93W,115 is a PNP RF BJT transistor with 3 terminals and a max power dissipation of 0.3 W. It operates in the L band with a transition frequency of 4000 MHz, making it ideal for amplifier applications in high-frequency circuits. The small outline package and surface-mount capability enhance its versatility in compact electronic designs.
LPT16ED
Skyworks Solutions
The Skyworks Solutions LPT16ED is an N-CHANNEL RF BJT with a SINGLE configuration for AMPLIFIER applications. It operates in KU BAND, has 4 terminals, and can handle up to 0.25 W power dissipation. With SILICON GERMANIUM material, it offers a max collector-emitter voltage of 4 V and a max operating temperature of 150 °C.
BFR99A
STMicroelectronics
BFR99A by STMicroelectronics is a PNP RF small signal BJT designed for amplifier applications. It features a max power dissipation of 0.36 W, operates at frequencies up to 2300 MHz, and withstands temperatures up to 200 °C. Its cylindrical metal package ensures durability in ultra-high frequency environments.
BF224RLRM
BF224RLRM by Onsemi is an NPN RF BJT transistor with a max collector-emitter voltage of 30V and max operating temp of 150 °C. It operates in the very high frequency band at 850MHz, making it ideal for applications requiring high-speed signal amplification in electronic circuits.
2N5109
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1200 MHz; Maximum Power Dissipation (Abs): 2.5 W; Maximum Collector Current (IC): .4 A;
KSC2223YMTF
KSC2223YMTF by Onsemi is an NPN RF BJT transistor with a max fT of 600 MHz. It has a max operating temp of 150°C and can handle a max collector-emitter voltage of 20V. Ideal for amplifier applications, this transistor comes in a small outline package with gull wing terminals for surface mounting.
934055894115
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Collector Current (IC): .035 A; Additional Features: HIGH RELIABILITY;
SD1127
NPN; Surface Mount: NO; Transistor Element Material: SILICON; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0;
BFG67/X,215
NXP Semiconductors' BFG67/X,215 is a NPN RF BJT transistor with 4 terminals. It operates in L Band with fT of 8000 MHz and hFE of 60. Ideal for amplifier applications, it has a max power dissipation of 0.3 W and can handle up to 10 V collector-emitter voltage.
HFA3134IHZ96
Renesas Electronics
Renesas Electronics' HFA3134IHZ96 is an NPN RF BJT with 2 elements, ideal for amplifier applications in the UHF band. Features include VCEsat of 0.25V, hFE of 48, and fT of 3000MHz. With a max operating temp of 85°C and compact SOT package, it's suitable for high-frequency circuit designs.
BFQ254
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 1300 MHz; Maximum Collector Current (IC): .3 A; Terminal Form: FLAT;
MPS5179RLRE
MPS5179RLRE by Onsemi is an NPN RF BJT with a max collector-emitter voltage of 12V and fT of 900MHz. Ideal for amplifier applications, it has a max collector current of 0.05A and low capacitance at 1pF, housed in a cylindrical package suitable for very high-frequency bands.
HFA3101BZ96
HFA3101BZ96 by Renesas Electronics is an NPN bipolar junction transistor (BJT) designed for amplifier applications in the ultra high frequency band. With a max operating temperature of 150°C and a max collector-emitter voltage of 8V, it offers a nominal transition frequency of 10,000 MHz.
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BFU530AR
The NXP Semiconductors BFU530AR is a RF BJT transistor with NPN polarity, suitable for amplifier applications in the L Band. It has a max collector-emitter voltage of 12V, collector current of 0.04A, and transition frequency of 11GHz. This surface-mount device comes in a small outline package with Gull Wing terminals.
BFU520AR
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 10000 MHz; Maximum Collector Current (IC): .03 A; Additional Features: LOW NOISE;
BFU550AR
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 11000 MHz; Maximum Power Dissipation (Abs): .45 W; Maximum Collector Current (IC): .08 A;
BFU520WX
The NXP Semiconductors BFU520WX is an NPN RF BJT transistor with a max collector-emitter voltage of 12V and fT of 10GHz. It is designed for amplifier applications in the L band, featuring a small outline package with gull wing terminals for surface mount assembly. Operating from -40°C, it offers a peak reflow temperature of 260°C and complies with AEC-Q101 and IEC-60134 standards.
BFU520YX
The NXP Semiconductors BFU520YX is an RF NPN BJT transistor with a max fT of 10 GHz. It has a max VCE of 12V and Ptot of 0.45W, suitable for L Band applications like amplifiers. The package is a small outline with Gull Wing terminals, operating b/w -40 to 150°C.
BFU550XAR
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 11000 MHz; Maximum Collector Current (IC): .05 A; Package Shape: RECTANGULAR;
BFU550XRR
BFU550WF
The NXP Semiconductors BFU550WF is an RF BJT transistor with a max fT of 11GHz. It operates in L Band, has a Vce of 12V, and IC of 0.05A. Ideal for amplifier applications, it comes in a small outline package with Gull Wing terminals for surface mounting.
BFU550XRVL
BFU590QX
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .2 A; No. of Elements: 1;
BFU550AVL
The NXP Semiconductors BFU550AVL is a RF Small Signal BJT transistor with NPN polarity. It is a single configuration amplifier, suitable for L Band applications. With a max operating temperature of 150°C and a nominal transition frequency of 11 GHz, it offers high performance in a small outline package.
BFU550VL
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 11000 MHz; Maximum Power Dissipation (Abs): .45 W; Maximum Collector Current (IC): .05 A;
BFU550XVL
The NXP Semiconductors BFU550XVL is a RF BJT transistor with NPN polarity, suitable for amplifier applications in L Band frequencies up to 11GHz. It features a max collector-emitter voltage of 12V, collector current of 0.05A, and a transition frequency of 11GHz. This surface-mount transistor comes in a small outline package with Gull Wing terminals.
BFU550R
BFU550WX
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 11000 MHz; Maximum Collector Current (IC): .05 A; Terminal Form: GULL WING;
BFU520VL
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 10500 MHz; Maximum Power Dissipation (Abs): .45 W; Maximum Collector Current (IC): .05 A;
BFU520XR
BFU520XR,235
BFU520XRR
The NXP Semiconductors BFU520XRR is a RF BJT transistor with NPN polarity, ideal for amplifier applications in the L band. It has a max operating temperature of 150°C, fT of 10500 MHz, and can handle a collector-emitter voltage of 16V. This small outline transistor features gull wing terminals and is surface mountable.
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