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NSVF5501SKT3G

Onsemi

NSVF5501SKT3G by Onsemi

NSVF5501SKT3G by Onsemi is an NPN RF BJT transistor with a max fT of 5500 MHz. It has a max power dissipation of 0.25 W and operates in the ultra-high frequency band, making it ideal for amplifier applications. This small outline transistor can handle up to 10 V collector-emitter voltage and operates b/w -55 °C to 150°C temperature range.

Median Price

$0.363

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 4,147 parts In-Stock

1+ parts

$0.360

100+ parts

$0.192

1k+ parts

$0.162

10k+ parts

$0.147

4,147

$0.360

$0.192

$0.162

$0.147

Newark

USA . 7,257 parts In-Stock

1+ parts

$0.435

100+ parts

$0.267

1k+ parts

$0.237

10k+ parts

-

7,257

$0.435

$0.267

$0.237

-

Mouser Electronics

USA . 10,510 parts In-Stock

1+ parts

$0.540

100+ parts

$0.297

1k+ parts

$0.181

10k+ parts

$0.146

10,510

$0.540

$0.297

$0.181

$0.146

Flip Electronics (Authorized)

USA . 208,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

208,000

-

-

-

-

Rochester

USA . 14,835 parts In-Stock

1+ parts

-

100+ parts

$0.178

1k+ parts

$0.147

10k+ parts

$0.132

14,835

-

$0.178

$0.147

$0.132

Chip1Stop

Japan . 7,729 parts In-Stock

1+ parts

-

100+ parts

$2.320

1k+ parts

$2.190

10k+ parts

-

7,729

-

$2.320

$2.190

-

Farnell

UK . 7,387 parts In-Stock

1+ parts

-

100+ parts

$0.176

1k+ parts

$0.106

10k+ parts

$0.091

7,387

-

$0.176

$0.106

$0.091

Element14

Singapore . 7,387 parts In-Stock

1+ parts

-

100+ parts

$0.363

1k+ parts

$0.238

10k+ parts

$0.218

7,387

-

$0.363

$0.238

$0.218

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 695 parts In-Stock

1+ parts

$0.139

100+ parts

-

1k+ parts

-

10k+ parts

-

695

$0.139

-

-

-

Vyrian

USA . 661 parts In-Stock

1+ parts

$0.146

100+ parts

-

1k+ parts

-

10k+ parts

-

661

$0.146

-

-

-

Flip Electronics

USA . 208,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

208,000

-

-

-

-

Rapid Electronics

USA . 7,729 parts In-Stock

1+ parts

-

100+ parts

$0.220

1k+ parts

-

10k+ parts

-

7,729

-

$0.220

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 2,460 parts In-Stock

1+ parts

$0.131

100+ parts

-

1k+ parts

-

10k+ parts

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2,460

$0.131

-

-

-

Corohmni

South Africa . 333 parts In-Stock

1+ parts

$0.146

100+ parts

-

1k+ parts

-

10k+ parts

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333

$0.146

-

-

-

Perfect Parts

USA . 68,432 parts In-Stock

1+ parts

-

100+ parts

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68,432

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-

-

-

Continental Prestige Electronics

USA . 7,487 parts In-Stock

1+ parts

-

100+ parts

$0.177

1k+ parts

$0.115

10k+ parts

-

7,487

-

$0.177

$0.115

-

TANS Electronics

Latvia . 7,226 parts In-Stock

1+ parts

-

100+ parts

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7,226

-

-

-

-

Problanco Electronics

Mexico . 7,186 parts In-Stock

1+ parts

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100+ parts

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7,186

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-

-

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Kepictronics

USA . 5,950 parts In-Stock

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5,950

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SupplyDigital Components

Austria . 3,256 parts In-Stock

1+ parts

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100+ parts

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3,256

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Kulean Microsystems

USA . 726 parts In-Stock

1+ parts

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100+ parts

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726

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UHIMA Technologies

Türkiye . 715 parts In-Stock

1+ parts

-

100+ parts

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715

-

-

-

-

Overview

Enhance your electronic designs with the NSVF5501SKT3G by Onsemi, a top-quality RF Small Signal Bipolar Junction Transistor. Manufactured by Onsemi, this NPN transistor is ideal for amplifier applications in the ultra-high frequency band. With a minimum DC current gain of 100 and a maximum collector-emitter voltage of 10V, this transistor offers unmatched performance and reliability. Trust Onsemi to deliver cutting-edge technology and superior products that will take your projects to the next level. Experience the difference with the NSVF5501SKT3G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for a variety of environments.

Polarity or Channel Type: NPN

Commonly used in amplifiers and other electronic circuits, offering reliable performance.

Configuration: SINGLE

Simplified design for ease of use and integration into circuits.

Transistor Application: AMPLIFIER

Designed specifically for amplification applications, ensuring high performance in such scenarios.

Surface Mount: YES

Allows for easy and efficient PCB assembly, saving time and labor.

Maximum Power Dissipation (Abs): 0.25 W

Can handle high power levels, making it suitable for demanding applications.

Minimum DC Current Gain (hFE): 100

Provides consistent and reliable amplification in various circuits.

Maximum Collector-Emitter Voltage: 10 V

Suitable for low voltage applications, ensuring efficient performance.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) NSVF5501SKT3G attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

1.2 pF

Maximum Collector-Emitter Voltage:

10 V

Configuration:

Minimum DC Current Gain (hFE):

100

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-PDSO-F3

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

.25 W

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

TIN BISMUTH

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

NSVF5501SKT3G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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