Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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RF Small Signal Bipolar Transistors; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 1; Terminal Finish: TIN;
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RF Small Signal Bipolar Junction Transistors (BJT) BFP650FH6327XTSA1 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Infineon Technologies
JESD-609 Code:
Moisture Sensitivity Level (MSL):
Terminal Finish:
BFP650FH6327XTSA1 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.
CEO
Jochen Hanebeck
Chief Financial Officer
Sven Schneider
Chief Marketing Officer
Andreas Urschitz
Villach 300mm
Fabrication
Fab Initiation
2011
Austria
Villach
Wafer Capacity
11,000
Kulim 2
2016
Malaysia
Kulim
79,500
Dresden - Module 3
1999
Germany
Dresden
58,000
Villach Building
2,000
Regensburg
1986
60,000
Dresden 200 - Module 1
1995
28,000
Dresden 200 - Module 2
1996
Building 38
2005
500
Building 47
Kulim 1
2006
110,000
Mesa Facility
1990
USA
Mesa
3,000
Villach 150mm
1981
35,000
Villach 200mm
68,000
Temecula
30,000
2021
2018
5,000
Kulim 3
2024
Fab 25
Austin
31,000
Dresden - Module 4
2026
2N2222A
Loras Industries
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
0460-202-16141
TE Connectivity
TE Connectivity's 0460-202-16141 contact features a crimp terminal type, machined contact design, and rated AC voltage of 1500V. With a wire gauge range of 20-16 AWG, it is ideal for applications requiring a male round pin-socket contact style in assembly products.
1N4148WS
Vishay Intertechnology
Vishay Intertechnology's 1N4148WS is a single rectifier diode with a max forward voltage of 1V and output current of 0.15A. With a fast reverse recovery time of 0.004us, it operates up to 150°C. Ideal for applications requiring high-speed switching and low power consumption in surface mount configurations.
E8WSDC12-32.768KTR
Ecliptek
PARALLEL - FUNDAMENTAL; Mounting Feature: SURFACE MOUNT; Frequency Tolerance: 20 ppm; Aging: 3 PPM/YEAR; Load Capacitance: 12.5 pF; Nominal Operating Frequency: .032768 MHz;
1N4148
Philips Semiconductors
RECTIFIER DIODE; Surface Mount: NO; Terminal Finish: MATTE TIN; Maximum Operating Temperature: 200 Cel; Maximum Output Current: .15 A; JESD-609 Code: e3;
SS14
Daco Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BAV99
Kec
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
Capar Components
RECTIFIER DIODE; Surface Mount: NO; No. of Phases: 1; Maximum Forward Voltage (VF): 1 V; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Output Current: .15 A;
Surge Components
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .6 A; No. of Terminals: 3;
Infineon Technologies
EU2B-YS3203C
Idec
ROTARY SWITCH;
BSS123LT1G
Onsemi
BSS123LT1G by Onsemi is a N-CHANNEL FET with 100V DS breakdown voltage, 0.17A drain current, and 6 ohm on resistance. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 0.225W. It comes in a small outline package with gull wing terminals and can withstand temperatures from -55 to 150°C.
LM7805CT
Comset Semiconductors
Other Regulators; No. of Terminals: 3; Maximum Input Voltage Absolute: 35 V; Maximum Voltage Tolerance: 5 %; Operating Temperature (TJ-Min): 0 Cel; Technology: BIPOLAR;
Philips Components
Renesas Electronics
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
Cheng-yi Electronic
Secos
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .6 A; JEDEC-95 Code: TO-92;
Rectron
SMBJ18CA
World Products
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LM317T
Analog Devices
ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Terminal Form: THROUGH-HOLE; No. of Functions: 1; Package Body Material: PLASTIC/EPOXY; Surface Mount: NO;
HFA3134IHZ96
Intersil
NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 8500 MHz; Maximum Collector Current (IC): .026 A; Minimum DC Current Gain (hFE): 48;
MCH4020-TL-H
The Onsemi MCH4020-TL-H is an NPN RF BJT with a max power dissipation of 0.4W, fT of 13GHz, and hFE of 60. Ideal for high-frequency applications in surface-mount configurations, it operates up to 150°C with a max collector current of 0.15A.
LM3046N
Rochester Electronics
NPN; Configuration: COMPLEX; Surface Mount: NO; Nominal Transition Frequency (fT): 550 MHz; Maximum Collector Current (IC): .05 A; No. of Terminals: 14;
MSC80195
STMicroelectronics
STMicroelectronics' MSC80195 is an NPN BJT transistor with a max fT of 3200 MHz. It has a max IC of 0.3A and Pdiss of 4.9W, suitable for L Band amplifier applications due to its high transition frequency and power dissipation capabilities.
2N2222
Solid State Devices
MPS918G
MPS918G by Onsemi is an NPN BJT transistor with a max. collector-emitter voltage of 15V and fT of 600MHz. Ideal for amplifier applications, it has a max. power dissipation of 0.625W and operates at up to 150 °C. The package style is cylindrical with through-hole terminals, making it suitable for ultra-high frequency band circuits.
2N3553
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 500 MHz; Maximum Power Dissipation (Abs): 7 W; Maximum Collector Current (IC): 1 A;
MSD2714AT1G
The Onsemi MSD2714AT1G is an NPN RF BJT with a max collector-emitter voltage of 25V and fT of 650MHz. It is ideal for UHF applications due to its small outline package and high transition frequency. With a DC current gain of 90, it offers efficient performance in ultra-high frequency band circuits.
MPSH10
Semiconductor Technology
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 650 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .04 A;
934063134215
NXP Semiconductors
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 6000 MHz; Maximum Collector Current (IC): .035 A; JESD-30 Code: R-PDSO-G3;
BFU520VL
NXP Semiconductors' BFU520VL is a NPN BJT transistor with 4 terminals, ideal for L Band applications. With a max fT of 10500 MHz and hFE of 60, it operates at temperatures from -40 to 150 °C, making it suitable for high-frequency amplifier circuits in various electronic devices.
BF959RLRE
BF959RLRE by Onsemi is a NPN RF BJT with max. 20V VCE, 0.1A IC, and 700MHz fT. Ideal for very high frequency band applications due to its silicon element material and cylindrical package style. Operating temp up to 150 °C makes it suitable for various through-hole configurations.
BFU710F,115
RF Small Signal Bipolar Transistors; Terminal Finish: TIN; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 30; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e3;
BFR93AW
Temic Semiconductors
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 6000 MHz; Maximum Collector Current (IC): .05 A; Package Shape: RECTANGULAR;
START499D
START499D by STMicroelectronics is an NPN RF small signal BJT designed for surface mount applications. It features a max power dissipation of 1.7 W, operates up to 150 °C, and supports a collector current of 1 A. Ideal for compact electronic circuits requiring efficient signal amplification.
MPSA10RLRPG
MPSA10RLRPG by Onsemi is an NPN RF BJT with 3 terminals, operating at up to 150 °C. It offers a max collector-emitter voltage of 25V and transition frequency of 650MHz. Ideal for applications requiring ultra-high frequency band performance in cylindrical package style.
BFP840ESDH6327XTSA1
BFP840ESDH6327XTSA1 by Infineon Technologies is a RF Small Signal Bipolar Junction Transistor (BJT) with NPN polarity. It is a single configuration amplifier, suitable for C Band applications. With a max operating temperature of 150°C and a nominal transition frequency of 80 MHz, it offers high performance in a small outline package.
2N5399
Texas Instruments
2N5399 by Texas Instruments is an NPN RF BJT transistor with a max collector-emitter voltage of 15V and a transition frequency of 600MHz. It is commonly used for switching applications in the ultra-high-frequency band due to its high power dissipation of 0.36W and low collector-base capacitance of 3pF.
BFR193FH6327XTSA1
BFR193FH6327XTSA1 by Infineon Technologies is a NPN RF BJT transistor with 3 terminals, suitable for L Band applications. It has a max collector-emitter voltage of 12V, max collector current of 0.08A, and transition frequency of 8000MHz. Ideal for amplifier circuits in automotive electronics due to AEC-Q101 compliance.
934064589115
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 55000 MHz; Maximum Collector Current (IC): .04 A; Maximum Collector-Emitter Voltage: 2.8 V;
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BFP650H6327XTSA1
BFP650H6327XTSA1 by Infineon Technologies is a NPN RF Small Signal BJT with 4 terminals, suitable for X Band applications. It has a max fT of 42 GHz, max IC of 0.15 A, and max VCE of 4 V. Ideal for amplifier circuits in high-frequency communication systems due to its silicon germanium carbon element material.
BFP640ESDH6327XTSA1
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 45000 MHz; Maximum Collector Current (IC): .05 A; Transistor Element Material: SILICON GERMANIUM CARBON;
BFP640H6327XTSA1
BFP640H6327XTSA1 by Infineon Technologies is a NPN RF BJT transistor with 4 terminals, suitable for C band applications. It has a max fT of 40 GHz, IC of 0.05 A, and VCE of 4 V. Ideal for amplifier circuits in high-frequency communication systems due to its small outline package and silicon germanium material.
BFP620FH7764XTSA1
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 65000 MHz; Maximum Collector Current (IC): .08 A; No. of Terminals: 4;
BFP640FESDH6327XTSA1
BFP640FESDH6327XTSA1 by Infineon Technologies is a NPN RF BJT transistor with 4.1V VCE, 0.05A IC, and fT of 46GHz. It is used for X Band amplifier applications in automotive electronics, meeting AEC-Q101 standards. This surface-mount device has a small outline package with 4 terminals and silicon germanium carbon element material.
BFP640FH6327XTSA1
BFP640FH6327XTSA1 by Infineon Technologies is a NPN RF Small Signal BJT with 4 terminals, suitable for C Band applications. It has a max fT of 40 GHz, 0.05 A IC, and 4 V VCE. This transistor is designed for high-frequency amplifier circuits in automotive electronics.
BFP620H7764XTSA1
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 65000 MHz; Maximum Collector Current (IC): .08 A; Maximum Collector-Emitter Voltage: 2.3 V;
BFP620FE7764
BFP620FE7764 by Infineon Technologies is a NPN RF BJT transistor with 4 terminals, operating in the C band up to 65 GHz. It has a max collector-emitter voltage of 2.3V and collector current of 0.08A, making it suitable for high-frequency applications like wireless communication systems. The package is surface mountable with a small outline shape and matte tin finish.
BFP640F-E6327
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 30000 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .05 A;
BFP640FE6327HTSA1
RF Small Signal Bipolar Transistors;
BFP640FE6327XT
BFP640F
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 40000 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .05 A;
BFP620FE7764HTSA1
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 65000 MHz; Maximum Collector Current (IC): .08 A; Transistor Element Material: SILICON GERMANIUM;
BFP620E7764HTSA1
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 65000 MHz; Maximum Collector Current (IC): .08 A; Package Style (Meter): SMALL OUTLINE;
BFP640FESD
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 46000 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .05 A;
BFP620_E6327
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 65000 MHz; Maximum Power Dissipation (Abs): .185 W; Maximum Collector Current (IC): .08 A;
BFP620F
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 65000 MHz; Maximum Collector Current (IC): .08 A; Terminal Finish: TIN;
BFP640
BFP640_E_L6327
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 40000 MHz; Maximum Collector Current (IC): .05 A; Terminal Position: DUAL;
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