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BF224RLRE

Onsemi

BF224RLRE by Onsemi

The Onsemi BF224RLRE is an NPN RF BJT with a max. collector-emitter voltage of 30V and max. collector current of 0.05A. Operating up to 150 °C, it has a transition frequency of 850MHz, making it ideal for high-frequency applications in very high frequency bands. The transistor's through-hole package with cylindrical shape and bottom terminal position ensures easy installation and reliable performance.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,184 parts In-Stock

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Digiode

USA . 169 parts In-Stock

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Problanco Electronics

Mexico . 4,886 parts In-Stock

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Kulean Microsystems

USA . 3,009 parts In-Stock

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SupplyDigital Components

Austria . 2,947 parts In-Stock

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Corphita

USA . 1,242 parts In-Stock

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UHIMA Technologies

Türkiye . 956 parts In-Stock

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TANS Electronics

Latvia . 952 parts In-Stock

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Corohmni

South Africa . 488 parts In-Stock

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Native Components

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Northwest PG Solutions

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Overview

Enhance your RF signal processing capabilities with the BF224RLRE by Onsemi. Known for their superior quality and reliability, Onsemi's RF small signal bipolar junction transistors are a top choice for applications requiring very high frequency band performance. With a maximum collector-emitter voltage of 30V and a nominal transition frequency of 850MHz, this NPN transistor offers unmatched precision and efficiency. Upgrade your electronics with the BF224RLRE and experience the value and benefits that only Onsemi can deliver.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this product versatile for various applications.

Configuration: SINGLE

The single configuration simplifies circuit design and layout, making it easier to integrate into existing systems.

Package Shape: ROUND

The round shape allows for easy mounting and soldering, improving the overall efficiency of the assembly process.

Highest Frequency Band: VERY HIGH FREQUENCY BAND

With very high frequency capabilities, this transistor is ideal for applications requiring fast signal processing and high data transfer rates.

No. of Terminals: 3

Having 3 terminals allows for enhanced control and flexibility in circuit connections.

Package Style (Meter): CYLINDRICAL

The cylindrical package style offers compact size and easy integration into various electronic devices.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand heat-intensive applications without compromising performance.

Maximum Collector-Emitter Voltage: 30 V

The high maximum collector-emitter voltage rating provides a wide range of voltage tolerance, making the transistor suitable for different voltage levels.

Transistor Element Material: SILICON

Silicon transistors offer high reliability and performance, making this product a reliable choice for electronic circuits.

Maximum Collector Current (IC): 0.05 A

The maximum collector current rating of 0.05 A allows for handling moderate current levels, suitable for various low-power applications.

Terminal Finish: TIN LEAD

Tin lead terminal finish ensures good solderability and conductivity, facilitating easy and reliable connections.

Terminal Position: BOTTOM

Having the terminals at the bottom makes it easy to insert and solder the transistor onto a circuit board.

Nominal Transition Frequency (fT): 850 MHz

With a high nominal transition frequency, this transistor can operate at high frequencies, making it suitable for RF applications and signal processing.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) BF224RLRE attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BF224RLRE Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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