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MPSH24

Onsemi

MPSH24 by Onsemi

MPSH24 by Onsemi is an NPN RF BJT transistor with a max collector-emitter voltage of 30V and fT of 400MHz. Ideal for amplifier applications, it has a max power dissipation of 0.625W and operates in the very high frequency band.

Median Price

$0.030

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 3,335 parts In-Stock

1+ parts

-

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$0.030

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$0.025

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$0.023

3,335

-

$0.030

$0.025

$0.023

Distributors (In-Stock)

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Digiode

USA . 2,449 parts In-Stock

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$0.024

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2,449

$0.024

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Vyrian

USA . 3,340 parts In-Stock

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$0.025

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3,340

$0.025

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TEDSS.com

USA . 4,960 parts In-Stock

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$0.250

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4,960

$0.250

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Anansix

USA . 1,324 parts In-Stock

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DF Sales Co.

USA . 273 parts In-Stock

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273

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DF Sales Co.

USA . 273 parts In-Stock

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273

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R&J Components

USA . 86 parts In-Stock

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Resion

USA . 56 parts In-Stock

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Electronic Expediters

USA . 16 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 671 parts In-Stock

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$0.022

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671

$0.022

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Corohmni

South Africa . 288 parts In-Stock

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$0.025

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288

$0.025

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Advanced Electronics

New Zealand . 2,500 parts In-Stock

1+ parts

$2.015

100+ parts

$1.834

1k+ parts

$1.652

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2,500

$2.015

$1.834

$1.652

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QUARKTWIN TECHNOLOGY LTD

USA . 25,382 parts In-Stock

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A-Z Elektronik GmbH

Germany . 7,074 parts In-Stock

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TANS Electronics

Latvia . 6,190 parts In-Stock

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Problanco Electronics

Mexico . 6,158 parts In-Stock

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Kulean Microsystems

USA . 5,831 parts In-Stock

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SupplyDigital Components

Austria . 4,936 parts In-Stock

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Metaverse IC Inc.

Canada . 3,322 parts In-Stock

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Glotronic Ltd.

UK . 1,800 parts In-Stock

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Supply Digital

USA . 1,356 parts In-Stock

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UHIMA Technologies

Türkiye . 174 parts In-Stock

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174

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Overview

Unleash the power of the Onsemi MPSH24 RF Small Signal BJT transistor, a game-changer in amplifier applications. Crafted with precision and expertise by Onsemi, this NPN transistor boasts unparalleled quality and performance in the very high-frequency band. With a maximum power dissipation of 0.625W and a minimum DC current gain of 30, this transistor offers customers unbeatable value and benefits. Elevate your projects to new heights with the MPSH24 and experience superior amplification like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material, protecting the internal components and ensuring long-term reliability.

Polarity or Channel Type: NPN

Commonly used in amplification circuits, ensuring compatibility with a wide range of applications.

Configuration: SINGLE

Simplified design and easier integration into circuits.

Transistor Application: AMPLIFIER

Specifically designed for amplification purposes, ensuring high performance and efficiency in such applications.

Package Shape: ROUND

Space-saving design and easy to mount in various electronic devices.

Terminal Form: THROUGH-HOLE

Easy to solder onto circuit boards, suitable for manual assembly processes.

Highest Frequency Band: VERY HIGH FREQUENCY BAND

Ideal for applications requiring high-frequency signal amplification, ensuring optimal performance in such scenarios.

Maximum Power Dissipation (Abs): 0.625 W

Can handle relatively high power levels, suitable for demanding applications without the risk of overheating.

Minimum DC Current Gain (hFE): 30

Consistent and stable amplification characteristics, ensuring accurate signal processing.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, suitable for operation in various environmental conditions.

Maximum Collector-Base Capacitance: 0.36 pF

Low capacitance value, reducing the risk of signal distortion and ensuring high-frequency performance.

Maximum Collector-Emitter Voltage: 30 V

Safe voltage handling, suitable for a wide range of applications without the risk of electrical damage.

Transistor Element Material: SILICON

High-quality material known for its reliability and stability in electronic components.

Minimum Operating Temperature: -55 °C

Can operate in extreme cold temperatures, suitable for applications in harsh environments.

Maximum Collector Current (IC): 0.05 A

Able to handle moderate current levels, suitable for low to medium power applications.

Terminal Position: BOTTOM

Easily accessible terminals for connection to external circuitry, facilitating integration into electronic systems.

Nominal Transition Frequency (fT): 400 MHz

High transition frequency, ensuring fast signal processing and optimal performance in high-frequency applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) MPSH24 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

.36 pF

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

30

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPSH24 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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