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BFR183E6327HTSA1

Infineon Technologies

BFR183E6327HTSA1 by Infineon Technologies

BFR183E6327HTSA1 by Infineon Technologies is an NPN RF Small Signal BJT transistor with a max collector-emitter voltage of 12V and a nominal transition frequency of 8000MHz. It is designed for ultra-high frequency band applications such as amplifiers, featuring a small outline package style and Gull Wing terminal form for surface mount assembly.

Median Price

$0.146

Lifecycle Status

Suppliers In-Stock

17

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 348 parts In-Stock

1+ parts

$0.770

100+ parts

$0.345

1k+ parts

$0.188

10k+ parts

$0.124

348

$0.770

$0.345

$0.188

$0.124

Adafruit Industries

USA . 5,000 parts In-Stock

1+ parts

$1.771

100+ parts

$1.612

1k+ parts

$1.452

10k+ parts

-

5,000

$1.771

$1.612

$1.452

-

Future Electronics

Canada . 12,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.096

12,000

-

-

-

$0.096

DigiKey

USA . 11,559 parts In-Stock

1+ parts

-

100+ parts

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$0.146

11,559

-

-

-

$0.146

Farnell

UK . 9,000 parts In-Stock

1+ parts

-

100+ parts

$0.076

1k+ parts

$0.075

10k+ parts

$0.075

9,000

-

$0.076

$0.075

$0.075

Element14

Singapore . 9,000 parts In-Stock

1+ parts

-

100+ parts

$0.170

1k+ parts

$0.164

10k+ parts

$0.160

9,000

-

$0.170

$0.164

$0.160

RS (Exports)

UK . 8,375 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.088

8,375

-

-

-

$0.088

Chip1Stop

Japan . 5,880 parts In-Stock

1+ parts

-

100+ parts

$0.079

1k+ parts

$0.079

10k+ parts

$0.077

5,880

-

$0.079

$0.079

$0.077

Arrow

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.106

3,000

-

-

-

$0.106

Rochester

USA . 1,690 parts In-Stock

1+ parts

-

100+ parts

$0.147

1k+ parts

$0.122

10k+ parts

$0.109

1,690

-

$0.147

$0.122

$0.109

Verical

USA . 130 parts In-Stock

1+ parts

-

100+ parts

$0.172

1k+ parts

$0.147

10k+ parts

$0.107

130

-

$0.172

$0.147

$0.107

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 479 parts In-Stock

1+ parts

$0.071

100+ parts

-

1k+ parts

-

10k+ parts

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479

$0.071

-

-

-

Nova Conductors

Japan . 150 parts In-Stock

1+ parts

$0.125

100+ parts

-

1k+ parts

-

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150

$0.125

-

-

-

Vyrian

USA . 17,174 parts In-Stock

1+ parts

-

100+ parts

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17,174

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Bristol Electronics

USA . 3,000 parts In-Stock

1+ parts

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3,000

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Euro-Tech

UK . 1,735 parts In-Stock

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1,735

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VNN

France . 625 parts In-Stock

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625

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 17,275 parts In-Stock

1+ parts

$0.059

100+ parts

-

1k+ parts

-

10k+ parts

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17,275

$0.059

-

-

-

Corphita

USA . 762 parts In-Stock

1+ parts

$0.068

100+ parts

-

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-

10k+ parts

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762

$0.068

-

-

-

Argo Parts USA

USA . 613 parts In-Stock

1+ parts

$0.125

100+ parts

-

1k+ parts

-

10k+ parts

$0.121

613

$0.125

-

-

$0.121

Netroflash

USA . 100 parts In-Stock

1+ parts

$0.125

100+ parts

-

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-

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100

$0.125

-

-

-

Corohmni

South Africa . 388 parts In-Stock

1+ parts

$0.892

100+ parts

-

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-

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-

388

$0.892

-

-

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Modulus Dynamics

Lithuania . 786 parts In-Stock

1+ parts

$0.933

100+ parts

$0.896

1k+ parts

$0.858

10k+ parts

-

786

$0.933

$0.896

$0.858

-

Advanced Electronics

New Zealand . 5,000 parts In-Stock

1+ parts

$1.771

100+ parts

$1.612

1k+ parts

$1.452

10k+ parts

-

5,000

$1.771

$1.612

$1.452

-

Andel Nordic

Denmark . 175 parts In-Stock

1+ parts

$20.780

100+ parts

-

1k+ parts

$14.544

10k+ parts

$14.544

175

$20.780

-

$14.544

$14.544

Epart123

USA . 150,000 parts In-Stock

1+ parts

-

100+ parts

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10k+ parts

$0.310

150,000

-

-

-

$0.310

Perfect Parts

USA . 64,776 parts In-Stock

1+ parts

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64,776

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Eastek

USA . 6,000 parts In-Stock

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6,000

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

1+ parts

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5,000

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Continental Prestige Electronics

USA . 44 parts In-Stock

1+ parts

-

100+ parts

$0.172

1k+ parts

$0.101

10k+ parts

$0.080

44

-

$0.172

$0.101

$0.080

Overview

Unleash the power of cutting-edge technology with the BFR183E6327HTSA1 by Infineon Technologies. This RF Small Signal Bipolar Junction Transistor offers unparalleled quality and precision engineering, ensuring optimal performance in amplifier applications. Infineon Technologies is a trusted manufacturer known for its innovative solutions and superior products. With its ultra-high frequency band capabilities and compact design, this transistor provides unmatched value and reliability. Upgrade your projects with the BFR183E6327HTSA1 and experience the difference in performance and efficiency.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it ideal for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this product versatile and suitable for amplifier applications.

Configuration: SINGLE

This simple configuration makes the transistor easy to use and integrate into electronic circuits.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, this transistor is optimized for high-performance amplification tasks.

Surface Mount: YES

With surface mount capabilities, this transistor is easy to solder onto circuit boards, saving valuable space in compact electronic devices.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for efficient placement and mounting on a circuit board.

Terminal Form: GULL WING

The gull wing terminals provide secure and reliable connections for improved performance and longevity.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

With capabilities in the ultra-high frequency band, this transistor is suitable for high-speed and high-frequency applications.

No. of Terminals: 3

The three terminals provide flexibility in circuit design and make the transistor compatible with various electronic configurations.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space and allows for compact designs in electronic devices.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand harsh environmental conditions and extended use.

Maximum Collector-Base Capacitance: 0.6 pF

The low collector-base capacitance ensures minimal signal distortion and interference in amplifier circuits.

Maximum Collector-Emitter Voltage: 12 V

The high collector-emitter voltage rating provides reliable performance in various voltage applications.

Transistor Element Material: SILICON

Silicon transistors offer high reliability and performance, making this product a dependable choice for electronic applications.

Maximum Collector Current (IC): 0.065 A

The maximum collector current rating allows for handling of moderate current loads in amplifier circuits.

Terminal Finish: TIN

The tin terminal finish ensures strong and reliable connections for optimal performance.

Terminal Position: DUAL

The dual terminal position provides flexibility in circuit design and compatibility with various electronic configurations.

Nominal Transition Frequency (fT): 8000 MHz

With a high nominal transition frequency, this transistor is suitable for high-speed signal processing and amplification tasks.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) BFR183E6327HTSA1 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Infineon Technologies

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

.6 pF

Maximum Collector-Emitter Voltage:

12 V

Configuration:

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BFR183E6327HTSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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