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2SC2995

Toshiba

2SC2995 by Toshiba

The Toshiba 2SC2995 is an NPN RF BJT transistor with a max collector-emitter voltage of 30V and fT of 350MHz. Ideal for amplifier applications, it has a max power dissipation of 0.2W and operates at up to 125°C. Its package style is in-line with through-hole terminals.

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Ampacity Inc.

Singapore . 1,171 parts In-Stock

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Continental Prestige Electronics

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Argo Parts USA

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Overview

Unleash the power of connectivity with the Toshiba 2SC2995 RF Small Signal Bipolar Junction Transistor. Crafted with precision and expertise by Toshiba, this NPN transistor is ideal for amplifier applications in the very high-frequency band. With a minimum DC current gain of 40 and a maximum operating temperature of 125°C, this transistor delivers unparalleled performance and reliability. Whether you're looking to amplify signals or enhance your electronic projects, the 2SC2995 offers exceptional value and benefits that will take your creations to new heights. Elevate your electronics game with Toshiba's 2SC2995 transistor today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package provides durability and protection for the transistor, ensuring it can withstand various environmental conditions.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification applications, which makes this transistor suitable for amplifier circuits.

Configuration: SINGLE

The single configuration simplifies the design and integration of the transistor into circuits, making it easier to handle.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, this transistor is optimized for amplifying signals efficiently and accurately.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy mounting and placement on circuit boards, optimizing space usage.

Terminal Form: THROUGH-HOLE

The through-hole terminal form provides a secure and stable connection, ensuring reliable performance in circuits.

Maximum Operating Temperature: 125 °C

With a maximum operating temperature of 125°C, this transistor can withstand high temperatures, making it suitable for a variety of applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) 2SC2995 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Toshiba

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

1.3 pF

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

40

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JESD-30 Code:

R-PSIP-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SC2995 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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