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BFT92

NXP Semiconductors

BFT92 by NXP Semiconductors

The NXP Semiconductors BFT92 is a PNP RF BJT transistor with 3 terminals, suitable for ultra-high frequency band applications. It has a max power dissipation of 0.3W, hFE of 20, and fT of 5000MHz. Ideal for amplifier circuits in small outline packages requiring high-frequency performance.

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Chip Stock

USA . 5,500 parts In-Stock

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Cyclops Electronics Ltd

UK . 4,500 parts In-Stock

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VNN

France . 3,571 parts In-Stock

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Vyrian

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ComSIT Distribution GmbH

Germany . 1,263 parts In-Stock

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Anansix

USA . 1,065 parts In-Stock

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Digiode

USA . 993 parts In-Stock

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Nova Conductors

Japan . 450 parts In-Stock

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450

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LWI Electronics Inc

India . 370 parts In-Stock

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370

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Speed Components Ltd

Israel . 196 parts In-Stock

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Sensible Micro Corp

USA . 65 parts In-Stock

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J2 Sourcing AB

Sweden . 63 parts In-Stock

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ABC Electronics Ltd.

UK . 63 parts In-Stock

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Bristol Electronics

USA . 63 parts In-Stock

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Atlantic Semiconductor

USA . 63 parts In-Stock

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LittleDiode

UK . 26 parts In-Stock

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Manotoh

Italy . 23 parts In-Stock

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A2Z Electronics, Inc.

USA . 14 parts In-Stock

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Huijzer Components

Netherlands . 4 parts In-Stock

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Halfin

Belgium . 1 parts In-Stock

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Modulus Dynamics

Lithuania . 2,474 parts In-Stock

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$0.417

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$0.400

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$0.384

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Aztec Data Supply Inc.

USA . 3,201 parts In-Stock

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$0.660

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$0.660

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Corohmni

South Africa . 357 parts In-Stock

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$0.852

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Advanced Electronics

New Zealand . 100 parts In-Stock

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$1.375

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$1.306

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AZTECH Wire

Italy . 225 parts In-Stock

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$5.536

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One Stop Electronics

USA . 1,578 parts In-Stock

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$37.050

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Semicontronic

India . 1,205 parts In-Stock

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Authorized Procurement Solutions

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Futuretech Components

Singapore . 20,000 parts In-Stock

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Germany . 4,672 parts In-Stock

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Glotronic Ltd.

UK . 3,700 parts In-Stock

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Argo Parts USA

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Speed Components Ltd (Excess)

Israel . 2,378 parts In-Stock

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Alle Elektronik GmbH

Germany . 2,003 parts In-Stock

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Continental Prestige Electronics

USA . 447 parts In-Stock

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Bastille Electronics

Australia . 200 parts In-Stock

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Overview

Elevate your amplifier performance with the BFT92 by NXP Semiconductors. Manufactured with top-quality materials, this RF Small Signal Bipolar Junction Transistor offers unrivaled reliability and efficiency in ultra-high frequency applications. Whether you're looking to enhance your audio systems or improve signal processing, the BFT92 delivers exceptional power dissipation, high DC current gain, and precision transistor element material for optimal performance. Upgrade your electronics with the BFT92 and experience next-level innovation today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight and durable, making the transistor easy to integrate into electronic circuits without adding excessive weight.

Polarity or Channel Type: PNP

PNP transistors are useful in amplifier circuits and have certain advantages over NPN transistors in specific applications.

Configuration: SINGLE

The single configuration simplifies circuit design and makes the transistor easy to use in various amplifier applications.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, this transistor provides reliable performance in audio and RF amplifier circuits.

Surface Mount: YES

Surface mount technology allows for easy and efficient PCB assembly, reducing production time and costs.

Maximum Power Dissipation (Abs): 0.3 W

The high power dissipation capability ensures the transistor can handle high power levels without overheating or damage.

Maximum Collector-Emitter Voltage: 15 V

The high collector-emitter voltage rating allows for versatile use in various amplifier circuits without risk of voltage breakdown.

Maximum Time At Peak Reflow Temperature (s): 30

This transistor can withstand peak reflow temperatures for a sufficient amount of time during soldering processes without damage.

Nominal Transition Frequency (fT): 5000 MHz

The high transition frequency enables the transistor to operate efficiently at high frequencies, making it suitable for RF amplifier applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) BFT92 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

15 V

Configuration:

Minimum DC Current Gain (hFE):

20

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation Ambient:

.3 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Reference Standard:

CECC

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BFT92 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00

SB

8541.21.00.80

NSN

5961-01-422-7412, 5961014227412

NIIN

014227412

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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