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BFT92,215

NXP Semiconductors

BFT92,215 by NXP Semiconductors

NXP Semiconductors' BFT92,215 is a PNP RF BJT with 3 terminals. It operates in the ultra-high frequency band up to 5 GHz and has a max power dissipation of 0.3W. Ideal for amplifier applications, this transistor can handle a max collector-emitter voltage of 15V at an operating temp of 150°C.

Median Price

$0.117

Lifecycle Status

Suppliers In-Stock

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Nova Conductors

Japan . 38 parts In-Stock

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Vyrian

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Digiode

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Anansix

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Sensible Micro Corp

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Bristol Electronics

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Continental Prestige Electronics

USA . 2,729 parts In-Stock

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Argo Parts USA

USA . 2,440 parts In-Stock

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Netroflash

USA . 2,000 parts In-Stock

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Aztec Data Supply Inc.

USA . 793 parts In-Stock

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Advanced Electronics

New Zealand . 10,000 parts In-Stock

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AZTECH Wire

Italy . 358 parts In-Stock

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Ampacity Inc.

Singapore . 1,442 parts In-Stock

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One Stop Electronics

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Semicontronic

India . 2,202 parts In-Stock

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Lucentia Tech

USA . 43,760 parts In-Stock

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Robosynatics

Brazil . 21,880 parts In-Stock

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Corphita

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Microchip USA

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Perfect Parts

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UNI Independent Distributors

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Corohmni

South Africa . 1,113 parts In-Stock

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iodParts Technologies Inc.

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Overview

Unleash the power of innovation with the NXP Semiconductors BFT92,215 RF Small Signal Bipolar Junction Transistor. This high-quality PNP transistor offers unparalleled performance in amplifier applications within the ultra-high-frequency band. With a compact rectangular package and gull wing terminals, this single configuration transistor is designed for easy surface mounting. Experience the benefits of NXP's cutting-edge technology, delivering reliability and efficiency in every use. Upgrade your projects with the BFT92,215 and unlock limitless possibilities in the world of electronics.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor.

Polarity or Channel Type: PNP

Suitable for amplification applications.

Configuration: SINGLE

Simplified design and easy to use.

Transistor Application: AMPLIFIER

Specifically designed for amplifier circuits.

Surface Mount: YES

Convenient for automated assembly processes.

Package Shape: RECTANGULAR

Provides efficient use of space on PCB.

Terminal Form: GULL WING

Enhances soldering reliability and mechanical strength.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Suitable for high-frequency applications.

No. of Terminals: 3

Simplified connection setup.

Maximum Power Dissipation (Abs): 0.3 W

Efficient power handling capability.

Package Style (Meter): SMALL OUTLINE

Compact size for space-constrained applications.

Maximum Power Dissipation Ambient: 0.3 W

Can operate effectively in various ambient temperatures.

Minimum DC Current Gain (hFE): 20

Ensures consistent amplification performance.

Maximum Operating Temperature: 150 °C

Can withstand high operating temperatures.

Maximum Collector-Emitter Voltage: 15 V

Suitable for low-voltage applications.

Transistor Element Material: SILICON

Provides reliability and stability.

Maximum Collector Current (IC): 0.025 A

Suitable for low-current applications.

Terminal Finish: TIN

Enhances solderability and conductivity.

Terminal Position: DUAL

Allows for flexible PCB layout.

Maximum Time At Peak Reflow Temperature (s): 30

Safely withstands reflow soldering processes.

Peak Reflow Temperature °C: 260

Compatible with lead-free soldering processes.

Reference Standard: CECC

Meets industry standards for quality and performance.

Nominal Transition Frequency (fT): 5000 MHz

Provides high-frequency response for signal amplification.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) BFT92,215 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

15 V

Configuration:

Minimum DC Current Gain (hFE):

20

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation Ambient:

.3 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Reference Standard:

CECC

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BFT92,215 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00

SB

8541.21.00.80

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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