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IMX5T108

ROHM

IMX5T108 by ROHM

ROHM's IMX5T108 is a NPN BJT transistor with 2 elements, ideal for amplifier applications. It has a max power dissipation of 0.3W, fT of 1400MHz, and hFE of 27. The package is small outline with gull wing terminals, suitable for surface mount assembly at up to 260°C peak reflow temperature.

Median Price

$0.130

Lifecycle Status

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3

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Nova Conductors

Japan . 100 parts In-Stock

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Vyrian

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Bristol Electronics

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Netroflash

USA . 2,000 parts In-Stock

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$0.123

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$0.121

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Argo Parts USA

USA . 1,429 parts In-Stock

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$0.126

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Continental Prestige Electronics

USA . 933 parts In-Stock

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Ampacity Inc.

Singapore . 314 parts In-Stock

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$13.050

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AZTECH Wire

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$15.551

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Authorized Procurement Solutions

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Overview

Unlock the power of high-quality RF signal amplification with the ROHM IMX5T108 transistor. Manufactured by a trusted industry leader, this NPN transistor offers unparalleled performance and reliability in a compact package. Ideal for amplifier applications, this transistor boasts a minimum DC current gain of 27 and a maximum transition frequency of 1400 MHz. With excellent thermal properties and a peak reflow temperature of 260°C, the IMX5T108 ensures optimal performance even in demanding environments. Trust ROHM for cutting-edge semiconductor solutions that deliver value and efficiency. Elevate your next project with the IMX5T108 transistor today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and makes the transistor resistant to environmental factors, ensuring a longer lifespan.

Polarity or Channel Type: NPN

NPN type transistors are commonly used in signal amplification applications, making this transistor suitable for amplifier circuits.

Configuration: SEPARATE, 2 ELEMENTS

Having separate 2 elements allows for better control and optimization of each element, improving overall performance of the transistor.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in signal amplification tasks.

Surface Mount: YES

Surface mount capability makes installation easier and more efficient, especially in compact electronic devices.

Maximum Power Dissipation (Abs): 0.3 W

With a maximum power dissipation of 0.3W, this transistor can handle high power levels without overheating or damage.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150°C allows this transistor to operate reliably in various environmental conditions.

Nominal Transition Frequency (fT): 1400 MHz

Having a high transition frequency of 1400 MHz makes this transistor suitable for high-frequency applications, such as radio frequency circuits.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) IMX5T108 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from ROHM

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

27

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e1

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

IMX5T108 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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