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KSC1674O-C

Onsemi

KSC1674O-C by Onsemi

KSC1674O-C by Onsemi is an NPN RF BJT transistor with a max VCEsat of 0.3V, ideal for amplifier applications in the UHF band. It has a min hFE of 70, max fT of 600MHz, and can handle a max IC of 0.02A.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,470 parts In-Stock

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Digiode

USA . 1,093 parts In-Stock

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TANS Electronics

Latvia . 7,550 parts In-Stock

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Kulean Microsystems

USA . 7,152 parts In-Stock

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Problanco Electronics

Mexico . 4,126 parts In-Stock

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Corphita

USA . 1,889 parts In-Stock

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Assy Fe

Spain . 1,000 parts In-Stock

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UHIMA Technologies

Türkiye . 379 parts In-Stock

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379

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Corohmni

South Africa . 267 parts In-Stock

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SupplyDigital Components

Austria . 131 parts In-Stock

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Overview

Discover the power of innovation with the KSC1674O-C by Onsemi. This RF Small Signal Bipolar Junction Transistor (BJT) offers unparalleled quality and reliability, thanks to Onsemi's reputation for excellence in manufacturing. Ideal for amplifier applications in the ultra-high-frequency band, this NPN transistor provides a maximum VCEsat of just 0.3V, ensuring optimal performance. With a minimum DC current gain of 70 and a nominal transition frequency of 600 MHz, the KSC1674O-C delivers exceptional value and benefits to customers seeking top-tier components for their projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material which is commonly used in electronic components, ensuring reliability and ease of handling.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits due to their ability to amplify signals with low noise.

Configuration: SINGLE

Simplified design for straightforward circuit integration.

Transistor Application: AMPLIFIER

Specifically designed for amplification tasks, ensuring optimal performance in such applications.

Maximum VCEsat: 0.3 V

Low saturation voltage helps in minimizing power loss and maximizing efficiency.

Package Shape: ROUND

Compact and space-saving design suitable for various electronic devices.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure and reliable connections to the circuit board.

No. of Terminals: 3

Simple and easy to integrate into circuits with minimal connections required.

Maximum Power Dissipation (Abs): 0.25 W

Able to handle moderate power levels without overheating or damage.

Package Style (Meter): CYLINDRICAL

Unique cylindrical shape for easy identification and handling during assembly.

Maximum Power Dissipation Ambient: 0.25 W

Can dissipate heat efficiently, ensuring stable performance in varying temperature environments.

Minimum DC Current Gain (hFE): 70

Provides consistent and reliable amplification of input signals.

Maximum Operating Temperature: 150 °C

Can operate in high-temperature environments without performance degradation.

Maximum Collector-Base Capacitance: 1.2 pF

Low capacitance helps in reducing signal distortion and improving high-frequency performance.

Maximum Collector-Emitter Voltage: 20 V

Can handle high voltage levels without breakdown, ensuring reliable operation.

Transistor Element Material: SILICON

Silicon material provides excellent electrical properties for high-performance transistors.

Maximum Collector Current (IC): 0.02 A

Able to handle moderate current levels for amplification tasks.

Terminal Position: BOTTOM

Simplifies PCB layout and integration into circuit designs.

Nominal Transition Frequency (fT): 600 MHz

High transition frequency allows for efficient signal amplification at high frequencies.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) KSC1674O-C attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

1.2 pF

Maximum Collector-Emitter Voltage:

20 V

Configuration:

Minimum DC Current Gain (hFE):

70

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

.25 W

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.3 V

Trade Compliance

KSC1674O-C Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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