Loading...

KSC1730

Onsemi

KSC1730 by Onsemi

The Onsemi KSC1730 is an NPN RF BJT with a max VCEsat of 0.5V, ideal for amplifier applications in the UHF band. It has a min hFE of 40, max fT of 1100MHz, and can handle a max IC of 0.05A.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,776 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,776

-

-

-

-

Digiode

USA . 2,265 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,265

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

TANS Electronics

Latvia . 8,318 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,318

-

-

-

-

SupplyDigital Components

Austria . 6,618 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,618

-

-

-

-

Corphita

USA . 1,536 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,536

-

-

-

-

Supply Digital

USA . 1,493 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,493

-

-

-

-

Problanco Electronics

Mexico . 1,108 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,108

-

-

-

-

UHIMA Technologies

Türkiye . 364 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

364

-

-

-

-

Corohmni

South Africa . 159 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

159

-

-

-

-

Kulean Microsystems

USA . 47 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

47

-

-

-

-

Overview

Discover the power of the Onsemi KSC1730 RF Small Signal Bipolar Junction Transistor. With a reputation for quality and reliability, Onsemi delivers cutting-edge technology in a compact package. Ideal for amplifier applications in the ultra-high frequency band, this NPN transistor offers a maximum VCEsat of just 0.5V, providing exceptional performance. Trust Onsemi to provide the tools you need for success in your next project. Elevate your designs with the KSC1730 and experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the transistor lightweight and durable, ideal for portable and rugged applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this product suitable for amplifier applications.

Configuration: SINGLE

Single configuration simplifies circuit design and reduces complexity, making it easier to integrate into electronic systems.

Maximum VCEsat: 0.5 V

Low VCE saturation voltage minimizes power loss and improves efficiency in amplifier circuits.

Package Shape: ROUND

The round package shape ensures easy handling and installation, suitable for applications where space is limited.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure and reliable connections, making it easier to solder the transistor onto a circuit board.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Designed for ultra-high frequencies, this transistor is suitable for applications requiring high-speed signal processing.

No. of Terminals: 3

Having 3 terminals allows for versatile circuit configurations, enabling flexibility in amplifier circuit designs.

Maximum Power Dissipation (Abs): 0.25 W

With a maximum power dissipation of 0.25W, this transistor can handle moderate power levels in amplifier circuits.

Package Style (Meter): CYLINDRICAL

The cylindrical package style provides a compact form factor, suitable for applications where space is limited.

Maximum Power Dissipation Ambient: 0.25 W

The maximum power dissipation in ambient conditions of 0.25W ensures reliable performance in various operating environments.

Minimum DC Current Gain (hFE): 40

A minimum DC current gain of 40 ensures sufficient amplification in the transistor, making it suitable for amplifier applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can withstand high-temperature environments without sacrificing performance.

Maximum Collector-Base Capacitance: 1.5 pF

Low collector-base capacitance of 1.5pF minimizes signal distortion, making this transistor ideal for high-frequency applications.

Maximum Collector-Emitter Voltage: 15 V

A maximum collector-emitter voltage of 15V allows for safe operation in amplifier circuits without risking damage to the transistor.

Transistor Element Material: SILICON

Silicon transistors offer high performance and reliability, ensuring consistent operation over a wide range of temperatures and frequencies.

Maximum Collector Current (IC): 0.05 A

With a maximum collector current of 0.05A, this transistor can handle moderate current levels in amplifier circuits.

Terminal Position: BOTTOM

Bottom terminal position facilitates easy mounting and soldering onto a PCB, ensuring secure connections and reliable performance.

Nominal Transition Frequency (fT): 1100 MHz

A high nominal transition frequency of 1100MHz indicates that this transistor is capable of amplifying high-frequency signals accurately and efficiently.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) KSC1730 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

1.5 pF

Maximum Collector-Emitter Voltage:

15 V

Configuration:

Minimum DC Current Gain (hFE):

40

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

.25 W

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.5 V

Trade Compliance

KSC1730 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20