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PN3563

Onsemi

PN3563 by Onsemi

PN3563 by Onsemi is a NPN BJT for RF applications. Features include Gp of 14 dB, hFE of 20, and fT of 600 MHz. Ideal for amplifier circuits in the VHF band with a max operating temp of 150 °C.

Median Price

$0.053

Lifecycle Status

Suppliers In-Stock

25

In-Stock Inventory

1k+

Distributors (Authorized)

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Farnell

UK . 75,690 parts In-Stock

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$0.089

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$0.047

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75,690

$0.089

$0.047

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Rochester

USA . 56,870 parts In-Stock

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$0.053

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$0.044

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$0.039

56,870

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$0.053

$0.044

$0.039

Verical

USA . 15,490 parts In-Stock

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$0.049

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$0.049

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Digiode

USA . 1,752 parts In-Stock

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$0.041

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$0.041

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Vyrian

USA . 3,089 parts In-Stock

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$0.043

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3,089

$0.043

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American Microsemiconductor Inc.

USA . 705 parts In-Stock

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$1.890

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$1.890

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ICP Electronique

France . 10,900 parts In-Stock

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J2 Sourcing AB

Sweden . 6,000 parts In-Stock

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Resion

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ACDS - Activité Composants Distribution Service

France . 2,021 parts In-Stock

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Bristol Electronics

USA . 2,021 parts In-Stock

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Dan-Mar Components

USA . 2,021 parts In-Stock

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Mil-Aero Solutions, Inc.

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Lakeland Logistics Inc

USA . 1,475 parts In-Stock

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Anansix

USA . 731 parts In-Stock

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Component Electronics Inc.

Canada . 695 parts In-Stock

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Electronic Expediters

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Prism Electronics

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MISTER SPROCKETS

USA . 124 parts In-Stock

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Classic Components Corporation

USA . 120 parts In-Stock

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Manotoh

Italy . 50 parts In-Stock

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50

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Manoshevitz Elec. Sales

Israel . 35 parts In-Stock

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Sinequanon

UK . 20 parts In-Stock

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Donberg Electronics Ltd

Ireland . 5 parts In-Stock

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LittleDiode

UK . 1 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 49,293 parts In-Stock

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$0.037

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Corphita

USA . 2,376 parts In-Stock

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Corohmni

South Africa . 195 parts In-Stock

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Continental Prestige Electronics

USA . 65,141 parts In-Stock

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Component Stockers USA

USA . 708 parts In-Stock

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$99.990

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Metaverse IC Inc.

Canada . 39,955 parts In-Stock

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Authorized Procurement Solutions

USA . 25,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Assy Fe

Spain . 11,733 parts In-Stock

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SupplyDigital Components

Austria . 4,648 parts In-Stock

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Problanco Electronics

Mexico . 3,922 parts In-Stock

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Supply Digital

USA . 2,659 parts In-Stock

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Kulean Microsystems

USA . 1,767 parts In-Stock

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TANS Electronics

Latvia . 1,070 parts In-Stock

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UHIMA Technologies

Türkiye . 644 parts In-Stock

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Perfect Parts

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Overview

Upgrade your amplification game with the PN3563 by Onsemi, a top-of-the-line RF Small Signal BJT transistor that delivers unparalleled performance and reliability. Manufactured by Onsemi, a renowned leader in semiconductor technology, this NPN transistor is perfect for amplifier applications in the very high-frequency band. With a minimum power gain of 14 dB and a maximum power dissipation of 0.6 W, the PN3563 offers exceptional value and benefits to customers seeking high-quality components for their electronic projects. Experience superior quality and performance with the PN3563 from Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material for the package body makes this transistor lightweight and durable, which is ideal for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifier circuits, making this transistor suitable for amplifier applications.

Minimum Power Gain (Gp): 14 dB

With a minimum power gain of 14 dB, this transistor offers good amplification capability in signal processing applications.

Package Shape: ROUND

The round package shape allows for easy mounting and integration into electronic circuits.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150 °C ensures the transistor can withstand elevated temperatures in demanding environments.

Nominal Transition Frequency (fT): 600 MHz

With a high nominal transition frequency of 600 MHz, this transistor is suitable for high-frequency applications such as radio frequency (RF) amplification.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) PN3563 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

3 pF

Maximum Collector-Emitter Voltage:

15 V

Configuration:

Minimum DC Current Gain (hFE):

20

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Minimum Power Gain (Gp):

14 dB

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

PN3563 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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