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MSD2714AT1

Onsemi

MSD2714AT1 by Onsemi

MSD2714AT1 by Onsemi is an NPN BJT transistor with a max power dissipation of 0.225W and a transition frequency of 650MHz. It is ideal for applications requiring ultra-high frequency band operation, such as RF signal amplification in compact electronic devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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PC Components Company LLC

USA . 2,000 parts In-Stock

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2,000

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Bristol Electronics

USA . 2,000 parts In-Stock

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2,000

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Digiode

USA . 1,900 parts In-Stock

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1,900

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Vyrian

USA . 1,834 parts In-Stock

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1,834

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Kulean Microsystems

USA . 6,100 parts In-Stock

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6,100

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TANS Electronics

Latvia . 5,668 parts In-Stock

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5,668

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Problanco Electronics

Mexico . 3,791 parts In-Stock

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3,791

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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3,000

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SupplyDigital Components

Austria . 1,356 parts In-Stock

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Corphita

USA . 533 parts In-Stock

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533

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Corohmni

South Africa . 448 parts In-Stock

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448

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UHIMA Technologies

Türkiye . 211 parts In-Stock

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Overview

Elevate your RF signal performance with the MSD2714AT1 by Onsemi. Crafted with precision and quality in mind, this NPN transistor offers ultra-high frequency band capabilities, making it ideal for a variety of applications. Whether you're looking to enhance signal reception in telecommunications or boost performance in radio frequency devices, this transistor delivers exceptional value and reliability. Trust Onsemi's expertise in RF small signal BJT technology and unlock the full potential of your next project with the MSD2714AT1.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material makes the package lightweight and durable, ideal for portable electronic devices.

Polarity or Channel Type: NPN

NPN polarity allows for efficient switching and amplification in a variety of electronic circuits.

Configuration: SINGLE

Single configuration simplifies circuit design and integration, making it easier to use in different applications.

Surface Mount: YES

Surface mount capability enables easy and space-saving integration onto PCBs, suitable for compact designs.

Package Shape: RECTANGULAR

Rectangular shape provides easy mounting and alignment, enhancing ease of use during assembly.

Maximum Power Dissipation (Abs): 0.225 W

With a maximum power dissipation of 0.225W, the transistor can handle moderate power levels for reliable performance.

Nominal Transition Frequency (fT): 650 MHz

High transition frequency allows for fast switching speeds and high-frequency operation, suitable for RF applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) MSD2714AT1 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector-Base Capacitance:

.7 pF

Maximum Collector-Emitter Voltage:

25 V

Configuration:

Minimum DC Current Gain (hFE):

90

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP RF Small Signal

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MSD2714AT1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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