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HFA3102BZ96

Renesas Electronics

HFA3102BZ96 by Renesas Electronics

HFA3102BZ96 by Renesas Electronics is an NPN RF BJT transistor with 6 elements and 14 terminals. It operates in the ultra-high frequency band up to 10GHz, ideal for amplifier applications. With a max collector-emitter voltage of 8V and a transition frequency of 10,000MHz, it offers high performance in a small outline package.

Median Price

$6.080

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Renesas

USA . 2,485 parts In-Stock

1+ parts

$6.080

100+ parts

$4.550

1k+ parts

$4.500

10k+ parts

$4.500

2,485

$6.080

$4.550

$4.500

$4.500

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 22 parts In-Stock

1+ parts

$6.012

100+ parts

-

1k+ parts

-

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-

22

$6.012

-

-

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Vyrian

USA . 2,094 parts In-Stock

1+ parts

-

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2,094

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 2,240 parts In-Stock

1+ parts

$5.170

100+ parts

-

1k+ parts

-

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-

2,240

$5.170

-

-

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Continental Prestige Electronics

USA . 6,182 parts In-Stock

1+ parts

$6.012

100+ parts

-

1k+ parts

-

10k+ parts

$5.892

6,182

$6.012

-

-

$5.892

Netroflash

USA . 50 parts In-Stock

1+ parts

$6.012

100+ parts

-

1k+ parts

$5.711

10k+ parts

$5.591

50

$6.012

-

$5.711

$5.591

Component Stockers USA

USA . 3,194 parts In-Stock

1+ parts

$8.360

100+ parts

$6.260

1k+ parts

$4.750

10k+ parts

-

3,194

$8.360

$6.260

$4.750

-

Perfect Parts

USA . 23,223 parts In-Stock

1+ parts

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23,223

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QUARKTWIN TECHNOLOGY LTD

USA . 13,140 parts In-Stock

1+ parts

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13,140

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Microchip USA

USA . 4,165 parts In-Stock

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4,165

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Argo Parts USA

USA . 2,715 parts In-Stock

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2,715

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Supply Digital

USA . 680 parts In-Stock

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680

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Authorized Procurement Solutions

USA . 500 parts In-Stock

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100+ parts

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500

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Overview

Discover the Renesas Electronics HFA3102BZ96, a top-of-the-line RF Small Signal Bipolar Junction Transistor that promises unparalleled quality and performance. Renowned for their cutting-edge technology and innovation, Renesas Electronics delivers products that exceed industry standards. The HFA3102BZ96 is perfect for amplifier applications in the ultra-high-frequency band, offering customers reliability and efficiency like never before. Experience the difference with Renesas Electronics and elevate your projects to new heights with the HFA3102BZ96.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the transistor, ensuring a longer lifespan.

Polarity or Channel Type: NPN

NPN transistors are commonly used for general purpose amplification, making this transistor versatile in various applications.

Configuration: COMPLEX

Complex configuration allows for more precise control and customization of the transistor's performance, suitable for advanced amplifier designs.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in boosting signal strength.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, this transistor can withstand heat and operate reliably in a variety of environments.

Nominal Transition Frequency (fT): 10000 MHz

High transition frequency allows for efficient signal amplification in the ultra high frequency band, making this transistor suitable for high-performance applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) HFA3102BZ96 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Renesas Electronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

300 pF

Maximum Collector-Emitter Voltage:

8 V

Configuration:

Minimum DC Current Gain (hFE):

40

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JEDEC-95 Code:

MS-012AB

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

3

No. of Elements:

6

No. of Terminals:

14

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

HFA3102BZ96 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Renesas Electronics

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