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MPSH10RL

Onsemi

MPSH10RL by Onsemi

MPSH10RL by Onsemi is an NPN RF BJT with a max collector-emitter voltage of 25V and fT of 650MHz. It is used in ultra-high frequency applications due to its low capacitance (0.7pF) and high transition frequency. The transistor's cylindrical package with through-hole terminals makes it suitable for various RF small signal circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,106 parts In-Stock

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Digiode

USA . 1,180 parts In-Stock

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Problanco Electronics

Mexico . 6,800 parts In-Stock

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TANS Electronics

Latvia . 4,583 parts In-Stock

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Kulean Microsystems

USA . 4,428 parts In-Stock

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SupplyDigital Components

Austria . 2,552 parts In-Stock

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Corphita

USA . 1,280 parts In-Stock

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UHIMA Technologies

Türkiye . 690 parts In-Stock

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Corohmni

South Africa . 112 parts In-Stock

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Overview

Enhance your RF signal processing with the MPSH10RL by Onsemi, a top-quality NPN BJT transistor that delivers exceptional performance in ultra-high frequency applications. Manufactured by Onsemi, a trusted industry leader, this transistor offers unparalleled reliability and consistency. Ideal for a wide range of electronic devices and circuits, the MPSH10RL provides superior amplification and signal control, making it the perfect choice for demanding projects where precision is key. Elevate your designs with the value and benefits that this high-performance transistor brings to the table.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the transistor.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications.

Configuration: SINGLE

Simplifies circuit design by only requiring one transistor.

Package Shape: ROUND

Round shape allows for easy mounting and integration into circuit boards.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide a secure and stable connection in circuit boards.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Suitable for high-frequency applications such as satellite communication and radar systems.

No. of Terminals: 3

Provides flexibility in circuit design while keeping the transistor compact.

Package Style (Meter): CYLINDRICAL

Cylindrical package style is efficient for space-saving and easy installation.

Maximum Operating Temperature: 150 °C

Can withstand high temperature environments without compromising performance.

Maximum Collector-Base Capacitance: 0.7 pF

Low capacitance helps in high-speed amplification and switching applications.

Maximum Collector-Emitter Voltage: 25 V

Suitable for low to medium voltage applications in various electronic circuits.

Transistor Element Material: SILICON

Silicon material provides stable and reliable performance in electronic applications.

Terminal Finish: TIN LEAD

Tin lead finish ensures good solderability and corrosion resistance.

Terminal Position: BOTTOM

Bottom terminal position allows for easy soldering and connection to circuit boards.

Nominal Transition Frequency (fT): 650 MHz

High transition frequency enables fast response time and high-frequency operation.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) MPSH10RL attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Maximum Collector-Base Capacitance:

.7 pF

Maximum Collector-Emitter Voltage:

25 V

Configuration:

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPSH10RL Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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