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BF959RL1

Onsemi

BF959RL1 by Onsemi

BF959RL1 by Onsemi is a NPN BJT transistor with 3 terminals, max. power dissipation of 1.5W, and fT of 700MHz. Ideal for amplifier applications in the VHF band due to its high collector-emitter voltage of 20V and max. operating temp. of 150°C.

Median Price

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5

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1k+

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USA . 58,000 parts In-Stock

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Digiode

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France . 754 parts In-Stock

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Vyrian

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Nova Conductors

Japan . 300 parts In-Stock

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AZTECH Wire

Italy . 596 parts In-Stock

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$8.752

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Ampacity Inc.

Singapore . 1,285 parts In-Stock

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$10.050

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Component Stockers USA

USA . 705 parts In-Stock

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$99.990

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QUARKTWIN TECHNOLOGY LTD

USA . 27,801 parts In-Stock

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Problanco Electronics

Mexico . 8,176 parts In-Stock

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Glotronic Ltd.

UK . 3,700 parts In-Stock

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SupplyDigital Components

Austria . 3,308 parts In-Stock

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Kulean Microsystems

USA . 2,844 parts In-Stock

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TANS Electronics

Latvia . 1,530 parts In-Stock

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Corohmni

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UHIMA Technologies

Türkiye . 445 parts In-Stock

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Corphita

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Australia . 40 parts In-Stock

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Overview

The BF959RL1 by Onsemi is a top-of-the-line RF Small Signal Bipolar Junction Transistor designed for amplification applications. With a maximum operating temperature of 150 °C and a very high frequency band, this NPN transistor offers unmatched performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this product guarantees quality and durability. Whether you are working on communications, radar systems or other high-frequency applications, the BF959RL1 provides the value and benefits you need to succeed. Elevate your projects with this advanced transistor that delivers exceptional performance every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy package provides durability and protection, making the transistor suitable for a variety of environments.

Polarity or Channel Type: NPN

NPN transistor configuration is commonly used in amplifier circuits, making this transistor versatile for amplifier applications.

Configuration: SINGLE

Single configuration simplifies circuit design and makes the transistor easy to integrate into existing amplifier setups.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in signal amplification.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide easy and secure connections, enhancing the reliability of the transistor in amplifier circuits.

Maximum Power Dissipation (Abs): 1.5 W

With a high maximum power dissipation, this transistor can handle power efficiently, making it suitable for high-performance amplifier circuits.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows for reliable operation in various thermal conditions, ensuring stability in amplifier applications.

Nominal Transition Frequency (fT): 700 MHz

High nominal transition frequency enables fast switching capabilities, making the transistor ideal for high-frequency amplifier applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) BF959RL1 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

20 V

Configuration:

Minimum DC Current Gain (hFE):

35

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BF959RL1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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