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BF959RL1G

Onsemi

BF959RL1G by Onsemi

BF959RL1G by Onsemi is a NPN BJT transistor with 3 terminals. It operates in the very high frequency band up to 700 MHz, making it suitable for amplifier applications. With a max power dissipation of 1.5W and a collector-emitter voltage of 20V, it can handle various RF signal amplification tasks efficiently.

Median Price

$0.090

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 3,865 parts In-Stock

1+ parts

$0.351

100+ parts

$0.035

1k+ parts

$0.022

10k+ parts

-

3,865

$0.351

$0.035

$0.022

-

Rochester

USA . 9,062 parts In-Stock

1+ parts

-

100+ parts

$0.079

1k+ parts

$0.066

10k+ parts

$0.059

9,062

-

$0.079

$0.066

$0.059

DigiKey

USA . 9,062 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.100

9,062

-

-

-

$0.100

Verical

USA . 9,062 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.073

9,062

-

-

-

$0.073

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 300 parts In-Stock

1+ parts

$0.058

100+ parts

-

1k+ parts

-

10k+ parts

-

300

$0.058

-

-

-

Digiode

USA . 2,188 parts In-Stock

1+ parts

$0.062

100+ parts

-

1k+ parts

-

10k+ parts

-

2,188

$0.062

-

-

-

Chip Stock

USA . 17,000 parts In-Stock

1+ parts

-

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17,000

-

-

-

-

DigiKey Marketplace

USA . 16,000 parts In-Stock

1+ parts

-

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-

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16,000

-

-

-

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Vyrian

USA . 4,046 parts In-Stock

1+ parts

-

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-

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4,046

-

-

-

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VNN

France . 50 parts In-Stock

1+ parts

-

100+ parts

-

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50

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 8,599 parts In-Stock

1+ parts

$0.055

100+ parts

-

1k+ parts

-

10k+ parts

-

8,599

$0.055

-

-

-

Corohmni

South Africa . 314 parts In-Stock

1+ parts

$0.056

100+ parts

-

1k+ parts

-

10k+ parts

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314

$0.056

-

-

-

Aranea Global

USA . 500 parts In-Stock

1+ parts

$0.057

100+ parts

-

1k+ parts

$0.055

10k+ parts

-

500

$0.057

-

$0.055

-

Corphita

USA . 638 parts In-Stock

1+ parts

$0.058

100+ parts

-

1k+ parts

-

10k+ parts

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638

$0.058

-

-

-

AZTECH Wire

Italy . 862 parts In-Stock

1+ parts

$10.530

100+ parts

-

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862

$10.530

-

-

-

Perfect Parts

USA . 26,387 parts In-Stock

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26,387

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Continental Prestige Electronics

USA . 16,000 parts In-Stock

1+ parts

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100+ parts

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$0.059

10k+ parts

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16,000

-

-

$0.059

-

Kulean Microsystems

USA . 7,232 parts In-Stock

1+ parts

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7,232

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-

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QUARKTWIN TECHNOLOGY LTD

USA . 5,895 parts In-Stock

1+ parts

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5,895

-

-

-

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SupplyDigital Components

Austria . 5,324 parts In-Stock

1+ parts

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100+ parts

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5,324

-

-

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Problanco Electronics

Mexico . 3,960 parts In-Stock

1+ parts

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3,960

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-

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Authorized Procurement Solutions

USA . 3,865 parts In-Stock

1+ parts

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3,865

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-

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GreenTree Electronics

Israel . 3,865 parts In-Stock

1+ parts

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100+ parts

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3,865

-

-

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UHIMA Technologies

Türkiye . 509 parts In-Stock

1+ parts

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509

-

-

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TANS Electronics

Latvia . 190 parts In-Stock

1+ parts

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190

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Overview

Discover the power of the BF959RL1G by Onsemi, a high-quality RF Small Signal BJT that delivers exceptional performance in amplifier applications. Manufactured by Onsemi, known for their cutting-edge technology and reliability, this NPN transistor brings value and benefits to customers seeking superior signal amplification. With a very high frequency band and a maximum power dissipation of 1.5W, the BF959RL1G offers unmatched efficiency and precision. Trust Onsemi to provide top-notch solutions for your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection to the transistor, ensuring long-lasting performance.

Polarity or Channel Type: NPN

Commonly used in amplifier circuits, offering versatility and compatibility with various applications.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, allowing for reliable operation in demanding environments.

Nominal Transition Frequency (fT): 700 MHz

High frequency capability makes it suitable for very high frequency band applications, ensuring efficient signal amplification.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) BF959RL1G attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

20 V

Configuration:

Minimum DC Current Gain (hFE):

35

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BF959RL1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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