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2N4997

Texas Instruments

2N4997 by Texas Instruments

2N4997 by Texas Instruments is a NPN BJT transistor with max. collector-emitter voltage of 18V and max. power dissipation of 0.25W. Ideal for amplifier applications, it operates in the very high frequency band up to 600MHz, with a min DC current gain of 30 (hFE).

Median Price

$7.500

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ace Electronics

USA . 4 parts In-Stock

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$7.500

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4

$7.500

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Vyrian

USA . 5,357 parts In-Stock

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5,357

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Digiode

USA . 3,675 parts In-Stock

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3,675

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Resion

USA . 37 parts In-Stock

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37

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Sunrise Surplus Inc.

USA . 21 parts In-Stock

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21

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MISTER SPROCKETS

USA . 4 parts In-Stock

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4

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Distributors (Availability)

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Native Components

USA . 11 parts In-Stock

1+ parts

$0.139

100+ parts

-

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$0.133

11

$0.139

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$0.133

Northwest PG Solutions

USA . 2,280 parts In-Stock

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$0.153

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$0.135

2,280

$0.153

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$0.135

Parana Technologies

USA . 690 parts In-Stock

1+ parts

$0.895

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$1.826

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690

$0.895

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$1.826

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DigiPath Technology Company

USA . 2,113 parts In-Stock

1+ parts

$0.986

100+ parts

$0.907

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2,113

$0.986

$0.907

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ChromeModa Solutions

Germany . 5,388 parts In-Stock

1+ parts

$1.006

100+ parts

$0.825

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5,388

$1.006

$0.825

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IDEA Electronic Components Group

UK . 1,645 parts In-Stock

1+ parts

$1.006

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$0.905

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1,645

$1.006

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$0.905

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AZTECH Wire

Italy . 799 parts In-Stock

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$19.621

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799

$19.621

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One Stop Electronics

USA . 361 parts In-Stock

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$53.050

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361

$53.050

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Corphita

USA . 464 parts In-Stock

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464

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Overview

Unlock the power of cutting-edge technology with the 2N4997 by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments guarantees top-notch quality and reliability in all their products. This RF Small Signal Bipolar Junction Transistor is perfect for amplifier applications in the very high-frequency band, offering customers unmatched performance and efficiency. With a maximum collector-emitter voltage of 18V and a nominal transition frequency of 600 MHz, the 2N4997 delivers exceptional value and benefits to users looking for superior electronic components. Choose Texas Instruments for unparalleled excellence in every product.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material for the package body ensures durability and reliability, making this product suitable for a variety of applications.

Polarity or Channel Type: NPN

The NPN polarity allows for efficient signal amplification, making this transistor ideal for amplifier applications.

Configuration: SINGLE

The single configuration simplifies circuit design and installation, making it easier to integrate into electronic devices.

Highest Frequency Band: VERY HIGH FREQUENCY BAND

With a very high frequency band, this transistor is capable of handling high-speed signals and data transmission, suitable for advanced electronic systems.

Maximum Power Dissipation (Abs): 0.25 W

The high maximum power dissipation of 0.25W ensures reliable performance under various operating conditions, making it a suitable choice for demanding applications.

Package Shape: ROUND

The round package shape allows for easy mounting and installation, making this transistor convenient to use in a variety of electronic circuits.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand high temperatures, ensuring stable performance in various environments.

Nominal Transition Frequency (fT): 600 MHz

The high nominal transition frequency of 600 MHz indicates fast response and performance, making this transistor suitable for high-frequency applications such as RF amplifiers.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) 2N4997 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

.65 pF

Maximum Collector-Emitter Voltage:

18 V

Configuration:

Minimum DC Current Gain (hFE):

30

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JESD-30 Code:

O-PBCY-W3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N4997 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-064-8401, 5961010648401

NIIN

010648401

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

Category top products 20

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