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BFS17NTA

Diodes Incorporated

BFS17NTA by Diodes Incorporated

Diodes Incorporated's BFS17NTA is an NPN BJT transistor with 3 terminals, ideal for switching applications. With a max power dissipation of 0.33W and max operating temp of 150°C, it offers a transition frequency of 3200MHz. Its small outline package makes it suitable for surface mount designs in RF circuits.

Median Price

$0.320

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 55,032 parts In-Stock

1+ parts

$0.400

100+ parts

$0.217

1k+ parts

$0.183

10k+ parts

-

55,032

$0.400

$0.217

$0.183

-

Mouser Electronics

USA . 10,359 parts In-Stock

1+ parts

$0.400

100+ parts

$0.201

1k+ parts

$0.183

10k+ parts

-

10,359

$0.400

$0.201

$0.183

-

Newark

USA . 2,475 parts In-Stock

1+ parts

$0.453

100+ parts

$0.228

1k+ parts

$0.207

10k+ parts

-

2,475

$0.453

$0.228

$0.207

-

Arrow

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.122

3,000

-

-

-

$0.122

Verical

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

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$0.122

3,000

-

-

-

$0.122

Element14

Singapore . 580 parts In-Stock

1+ parts

-

100+ parts

$0.240

1k+ parts

$0.190

10k+ parts

$0.190

580

-

$0.240

$0.190

$0.190

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$0.150

100+ parts

-

1k+ parts

-

10k+ parts

-

10

$0.150

-

-

-

Bristol Electronics

USA . 2,400 parts In-Stock

1+ parts

$0.690

100+ parts

$0.345

1k+ parts

$0.138

10k+ parts

-

2,400

$0.690

$0.345

$0.138

-

Vyrian

USA . 37,669 parts In-Stock

1+ parts

-

100+ parts

-

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37,669

-

-

-

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VNN

France . 19,175 parts In-Stock

1+ parts

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19,175

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Chip Stock

USA . 18,500 parts In-Stock

1+ parts

-

100+ parts

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18,500

-

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-

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 8,324 parts In-Stock

1+ parts

-

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8,324

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Dan-Mar Components

USA . 2,400 parts In-Stock

1+ parts

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2,400

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Semi Source

USA . 655 parts In-Stock

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655

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Prism Electronics

USA . 51 parts In-Stock

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51

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 45,038 parts In-Stock

1+ parts

$0.096

100+ parts

-

1k+ parts

-

10k+ parts

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45,038

$0.096

-

-

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Aranea Global

USA . 2,000 parts In-Stock

1+ parts

$0.147

100+ parts

-

1k+ parts

$0.141

10k+ parts

-

2,000

$0.147

-

$0.141

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Argo Parts USA

USA . 1,415 parts In-Stock

1+ parts

$0.150

100+ parts

-

1k+ parts

-

10k+ parts

$0.145

1,415

$0.150

-

-

$0.145

Continental Prestige Electronics

USA . 1,605 parts In-Stock

1+ parts

$0.353

100+ parts

$0.190

1k+ parts

$0.123

10k+ parts

$0.106

1,605

$0.353

$0.190

$0.123

$0.106

Overview

Enhance your electronic projects with the BFS17NTA RF Small Signal Bipolar Junction Transistor by Diodes Incorporated. Manufactured with top-notch quality and expertise, this NPN transistor is perfect for switching applications in a variety of devices. With its small outline package and high transition frequency of 3200 MHz, this transistor offers unparalleled performance and efficiency. Trust Diodes Incorporated to provide you with the cutting-edge technology you need to take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, ensuring long-term reliability.

Polarity or Channel Type: NPN

NPN transistors are commonly used in switching applications, making this product suitable for various electronics projects.

Configuration: SINGLE

Single configuration simplifies the design and integration of the transistor into circuitry.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance in such scenarios.

Surface Mount: YES

Surface mount capability allows for easy and efficient soldering onto circuit boards.

Package Shape: RECTANGULAR

Rectangular shape provides a standard form factor that is easy to handle and work with.

Terminal Form: GULL WING

Gull wing terminals offer secure connectivity and easy mounting on circuit boards.

No. of Terminals: 3

Having 3 terminals allows for versatile connections and applications.

Maximum Power Dissipation (Abs): 0.33 W

With a high maximum power dissipation, this transistor can handle moderate power levels without overheating.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space and is suitable for compact electronic devices.

Minimum DC Current Gain (hFE): 56

Higher DC current gain ensures amplification capabilities and stable performance.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures without degradation.

Maximum Collector-Base Capacitance: 1.5 pF

Low collector-base capacitance helps in reducing feedback issues and maintaining signal integrity.

Maximum Collector-Emitter Voltage: 11 V

With a high maximum collector-emitter voltage, this transistor is suitable for a wide range of applications.

Transistor Element Material: SILICON

Silicon-based transistors offer high performance and reliability in electronic circuits.

Maximum Collector Current (IC): 0.05 A

This transistor can handle relatively high collector currents, making it suitable for various switching applications.

Terminal Finish: MATTE TIN

Matte tin finish provides good solderability and corrosion resistance for the terminals.

Terminal Position: DUAL

Dual terminal position allows for versatile mounting options and connectivity.

Maximum Time At Peak Reflow Temperature (s): 30

The transistor can withstand the peak reflow temperature for a sufficient duration during soldering processes.

Peak Reflow Temperature °C: 260

With a high peak reflow temperature, this transistor can be effectively soldered onto circuit boards using standard reflow techniques.

Nominal Transition Frequency (fT): 3200 MHz

High transition frequency indicates fast switching speeds and high-frequency capabilities, suitable for RF applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) BFS17NTA attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

1.5 pF

Maximum Collector-Emitter Voltage:

11 V

Configuration:

Minimum DC Current Gain (hFE):

56

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BFS17NTA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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