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Broadcom RF Small Signal Bipolar Junction Transistors (BJT) 2

RF Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Minimum Power Gain (Gp) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum VCEsat
AT-41535G by Broadcom

AT-41535G

Broadcom

NPN; Configuration: SINGLE; Surface Mount: YES; Terminal Finish: MATTE TIN; Package Style (Meter): DISK BUTTON; Maximum Operating Temperature: 150 Cel;

HIGH RELIABILITY

SINGLE

S BAND

O-MRDB-F4

e3

1

1

4

150 Cel

METAL

ROUND

DISK BUTTON

260

NPN

Not Qualified

YES

MATTE TIN

FLAT

RADIAL

AMPLIFIER

SILICON

AT-41500-GP4 by Broadcom

AT-41500-GP4

Broadcom

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .06 A;

LOW NOISE

.06 A

12 V

SINGLE

30

ULTRA HIGH FREQUENCY BAND

S-XUUC-N2

1

1

2

200 Cel

UNSPECIFIED

SQUARE

UNCASED CHIP

NPN

.5 W

Not Qualified

Other Transistors

YES

NO LEAD

UPPER

AMPLIFIER

SILICON

8000 MHz