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NESG260234-T1

Renesas Electronics

NESG260234-T1 by Renesas Electronics

Renesas Electronics' NESG260234-T1 is an NPN BJT transistor with a max collector-emitter voltage of 9.2V and a max operating temperature of 150°C. It is designed for ultra-high frequency band applications, featuring a single configuration in a small outline package suitable for surface mount assembly.

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Overview

Enhance your electronic designs with the NESG260234-T1 by Renesas Electronics, a top-quality RF Small Signal Bipolar Junction Transistor. Renowned for their expertise in semiconductor manufacturing, Renesas Electronics delivers cutting-edge technology and reliability in every product. Ideal for amplifier applications in the ultra-high-frequency band, this NPN transistor offers exceptional performance and efficiency. Elevate your projects with the NESG260234-T1 and experience the superior value and benefits it brings to your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material, ideal for small signal applications.

Polarity or Channel Type: NPN

Commonly used type for amplification, ensuring compatibility with various circuits.

Configuration: SINGLE

Simplified design for straightforward usage in amplifier circuits.

Transistor Application: AMPLIFIER

Specifically designed for amplification purposes, ensuring optimal performance.

Surface Mount: YES

Convenient for automated assembly processes and space-saving on PCBs.

Package Shape: RECTANGULAR

Efficient use of space on the PCB and easy to handle during assembly.

Terminal Form: FLAT

Simplifies soldering and ensures secure connections.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Suitable for high-frequency applications requiring fast signal processing.

No. of Terminals: 3

Simple and straightforward connection layout for ease of use.

Package Style (Meter): SMALL OUTLINE

Space-saving design suitable for compact electronic devices.

Maximum Operating Temperature: 150 °C

Can withstand high operating temperatures, ensuring reliability in various environments.

Maximum Collector-Emitter Voltage: 9.2 V

Suitable for low voltage applications, offering protection against voltage spikes.

Transistor Element Material: SILICON GERMANIUM

Combination of materials offering optimized performance characteristics.

Maximum Collector Current (IC): 0.5 A

Capable of handling moderate current loads in amplifier circuits.

Terminal Finish: TIN LEAD

Good solderability and conductivity for reliable connections.

Terminal Position: SINGLE

Simplified layout for easy integration into circuits.

Case Connection: EMITTER

Clear labeling for correct installation and connection in circuits.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) NESG260234-T1 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Renesas Electronics

Specs

Case Connection:

EMITTER

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

9.2 V

Configuration:

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-PSSO-F3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

FLAT

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON GERMANIUM

Trade Compliance

NESG260234-T1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Renesas Electronics

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